C2M™ Series, Single FETs, MOSFETs

Results:
6
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Package / Case
Current - Continuous Drain (Id) @ 25°C
Operating Temperature
Mounting Type
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining6
Applied Filters:
C2M™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageGradeFET FeatureSeriesTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
C2M0045170D
SICFET N-CH 1700V 72A TO247-3
1+
$139.4366
5+
$131.6901
10+
$123.9437
Quantity
4,768 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
-
C2M™
SiCFET (Silicon Carbide)
1700 V
72A (Tc)
20V
70mOhm @ 50A, 20V
4V @ 18mA
188 nC @ 20 V
+25V, -10V
3672 pF @ 1000 V
520W (Tc)
-
C2M0080120D
SICFET N-CH 1200V 36A TO247-3
1+
$13.9437
5+
$13.1690
10+
$12.3944
Quantity
3,700 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
-
C2M™
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
20V
98mOhm @ 20A, 20V
4V @ 5mA
62 nC @ 5 V
+25V, -10V
950 pF @ 1000 V
192W (Tc)
-
C2M1000170J-TR
SICFET N-CH 1700V 5.3A D2PAK-7
1+
$5.4507
5+
$5.1479
10+
$4.8451
Quantity
2,600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
TO-263-7
-
-
C2M™
SiCFET (Silicon Carbide)
1700 V
5.3A (Tc)
20V
1.4Ohm @ 2A, 20V
4V @ 500µA
13 nC @ 20 V
+25V, -10V
200 pF @ 1000 V
78W (Tc)
-
C2M1000170J
SICFET N-CH 1700V 5.3A D2PAK
1+
$8.3662
5+
$7.9014
10+
$7.4366
Quantity
2,150 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-7 (Straight Leads)
D2PAK (7-Lead)
-
-
C2M™
SiCFET (Silicon Carbide)
1700 V
5.3A (Tc)
20V
1.4Ohm @ 2A, 20V
4V @ 500µA
13 nC @ 20 V
+25V, -10V
200 pF @ 1000 V
78W (Tc)
-
C2M0045170P
SICFET N-CH 1700V 72A TO247-4
1+
$126.7606
5+
$119.7183
10+
$112.6761
Quantity
175 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 150°C (TJ)
N-Channel
TO-247-4
TO-247-4L
-
-
C2M™
SiCFET (Silicon Carbide)
1700 V
72A (Tc)
20V
59mOhm @ 50A, 20V
4V @ 18mA
188 nC @ 20 V
+25V, -10V
3672 pF @ 1000 V
520W (Tc)
-
C2M0080170P
SICFET N-CH 1700V 40A TO247-4
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
TO-247-4L
-
-
C2M™
SiCFET (Silicon Carbide)
1700 V
40A (Tc)
20V
125mOhm @ 28A, 20V
4V @ 10mA
120 nC @ 20 V
+25V, -10V
2250 pF @ 1000 V
277W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.