Automotive, AEC-Q101, CoolMOS™ Series, Single FETs, MOSFETs

Results:
6
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Operating Temperature
FET Feature
FET Type
Grade
Mounting Type
Supplier Device Package
Drain to Source Voltage (Vdss)
Qualification
Package / Case
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining6
Applied Filters:
Automotive, AEC-Q101, CoolMOS™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackagePackage / CaseQualificationRds On (Max) @ Id, Vgs
IPDQ65R080CFD7AXTMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
650 V
-
MOSFET (Metal Oxide)
-
36A (Tc)
Automotive, AEC-Q101, CoolMOS™
10V
4.5V @ 630µA
50 nC @ 10 V
±20V
2513 pF @ 400 V
223W (Tc)
PG-HDSOP-22-1
22-PowerBSOP Module
-
80mOhm @ 12.5A, 10V
IPQC65R040CFD7AXTMA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
650 V
-
MOSFET (Metal Oxide)
-
64A (Tc)
Automotive, AEC-Q101, CoolMOS™
10V
4.5V @ 1.24mA
97 nC @ 10 V
±20V
4975 pF @ 400 V
357W (Tc)
PG-HDSOP-22-1
22-PowerBSOP Module
-
40mOhm @ 24.8A, 10V
IPDQ65R099CFD7AXTMA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
650 V
-
MOSFET (Metal Oxide)
-
29A (Tc)
Automotive, AEC-Q101, CoolMOS™
10V
4.5V @ 480µA
39 nC @ 10 V
±20V
1942 pF @ 400 V
186W (Tc)
PG-HDSOP-22-1
22-PowerBSOP Module
-
99mOhm @ 9.7A, 10V
IPDQ65R060CFD7AXTMA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
650 V
-
MOSFET (Metal Oxide)
-
45A (Tc)
Automotive, AEC-Q101, CoolMOS™
10V
4.5V @ 820µA
65 nC @ 10 V
±20V
3288 pF @ 400 V
272W (Tc)
PG-HDSOP-22-1
22-PowerBSOP Module
-
60mOhm @ 16.4A, 10V
IPQC65R125CFD7AXTMA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
650 V
-
MOSFET (Metal Oxide)
-
24A (Tc)
Automotive, AEC-Q101, CoolMOS™
10V
4.5V @ 390µA
32 nC @ 10 V
±20V
1566 pF @ 400 V
160W (Tc)
PG-HDSOP-22-1
22-PowerBSOP Module
-
125mOhm @ 7.8A, 10V
IPDQ65R125CFD7AXTMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
650 V
-
MOSFET (Metal Oxide)
-
24A (Tc)
Automotive, AEC-Q101, CoolMOS™
10V
4.5V @ 390µA
32 nC @ 10 V
±20V
1566 pF @ 400 V
160W (Tc)
PG-HDSOP-22-1
22-PowerBSOP Module
-
125mOhm @ 7.8A, 10V

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.