TrenchPLUS Series, Single FETs, MOSFETs

Results:
3
Manufacturer
Series
Supplier Device Package
Package / Case
FET Feature
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Type
Grade
Qualification
Technology
Results remaining3
Applied Filters:
TrenchPLUS
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseSupplier Device PackageFET TypeDrain to Source Voltage (Vdss)Operating TemperatureGradeTechnologySeriesVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Qualification
BUK794R1-40BT,127
MOSFET N-CH 40V 75A TO220-5
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-5
TO-220-5
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchPLUS
4V @ 1mA
75A (Tc)
10V
4.1mOhm @ 50A, 10V
83 nC @ 10 V
±20V
6808 pF @ 25 V
Temperature Sensing Diode
272W (Tc)
-
BUK9C10-55BIT/A,11
MOSFET N-CH 55V 75A D2PAK-7
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-7, D²Pak (6 Leads + Tab)
D2PAK-7
N-Channel
55 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchPLUS
2V @ 1mA
75A (Ta)
4.5V, 10V
9mOhm @ 10A, 10V
51 nC @ 5 V
±15V
4667 pF @ 25 V
-
194W (Ta)
-
BUK714R1-40BT,118
MOSFET N-CH 40V 75A SOT426
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
D2PAK
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TrenchPLUS
4V @ 1mA
75A (Tc)
10V
4.1mOhm @ 50A, 10V
83 nC @ 10 V
±20V
6808 pF @ 25 V
Temperature Sensing Diode
272W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.