TrenchMOS™ Series, Single FETs, MOSFETs

Results:
957
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Qualification
FET Type
Grade
Mounting Type
Technology
Results remaining957
Applied Filters:
TrenchMOS™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseFET TypeSupplier Device PackageDrain to Source Voltage (Vdss)Operating TemperatureSeriesTechnologyFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)
BUK958R5-40E,127
MOSFET N-CH 40V 75A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.1V @ 1mA
75A (Tc)
5V, 10V
6.6mOhm @ 20A, 10V
20.9 nC @ 5 V
±10V
2600 pF @ 25 V
96W (Tc)
PMN38EN,165
MOSFET N-CH 30V 5.4A 6TSOP
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
SC-74, SOT-457
N-Channel
SC-74
30 V
-55°C ~ 150°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
5.4A (Tc)
4.5V, 10V
38mOhm @ 3A, 10V
6.1 nC @ 4.5 V
±20V
495 pF @ 25 V
1.75W (Tc)
BUK7213-40A,118
MOSFET N-CH 40V 55A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
DPAK
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
55A (Tc)
10V
13mOhm @ 25A, 10V
47 nC @ 10 V
±20V
2245 pF @ 25 V
150W (Tc)
PH3430AL,115
MOSFET N-CH 30V 100A LFPAK56
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
SC-100, SOT-669
N-Channel
LFPAK56, Power-SO8
30 V
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2.15V @ 1mA
100A (Tc)
-
3.5mOhm @ 15A, 10V
41 nC @ 10 V
-
2458 pF @ 12 V
-
PHD16N03T,118
MOSFET N-CH 30V 13.1A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
DPAK
30 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
13.1A (Tc)
10V
100mOhm @ 13A, 10V
5.2 nC @ 10 V
±20V
180 pF @ 30 V
32.6W (Tc)
BUK9528-55A,127
MOSFET N-CH 55V 40A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
55 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
40A (Tc)
4.5V, 10V
28mOhm @ 20A, 5V
-
±10V
1700 pF @ 25 V
99W (Tc)
BUK9E8R5-40E,127
MOSFET N-CH 40V 75A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
I2PAK
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.1V @ 1mA
75A (Tc)
5V, 10V
6.6mOhm @ 20A, 10V
20.9 nC @ 5 V
±10V
2600 pF @ 25 V
96W (Tc)
BUK9E3R7-60E,127
MOSFET N-CH 60V 120A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
I2PAK
60 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.1V @ 1mA
120A (Tc)
5V, 10V
3.4mOhm @ 25A, 10V
95 nC @ 5 V
±10V
13490 pF @ 25 V
293W (Tc)
BUK9E1R6-30E,127
MOSFET N-CH 30V 120A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
I2PAK
30 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.1V @ 1mA
120A (Tc)
5V, 10V
1.4mOhm @ 25A, 10V
113 nC @ 5 V
±10V
16150 pF @ 25 V
349W (Tc)
BUK9E15-60E,127
MOSFET N-CH 60V 54A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
I2PAK
60 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.1V @ 1mA
54A (Tc)
5V, 10V
13mOhm @ 15A, 10V
20.5 nC @ 5 V
±10V
2651 pF @ 25 V
96W (Tc)
PMCM650VNE/S500Z
MOSFET N-CH 12V 8.4A 6WLCSP
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
6-XFBGA, WLCSP
N-Channel
6-WLCSP (1.48x0.98)
12 V
-55°C ~ 150°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
900mV @ 250µA
8.4A (Ta)
1.5V, 4.5V
25mOhm @ 3A, 4.5V
15.4 nC @ 4.5 V
±8V
1060 pF @ 6 V
12.5W (Tc)
BUK952R3-40E,127
MOSFET N-CH 40V 120A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
40 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2.1V @ 1mA
120A (Tc)
5V, 10V
2.2mOhm @ 25A, 10V
87.8 nC @ 5 V
±10V
13160 pF @ 25 V
293W (Tc)
BUK7614-55,118
MOSFET N-CH 55V 68A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
D2PAK
55 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
68A (Tc)
10V
14mOhm @ 25A, 10V
-
±16V
2900 pF @ 25 V
142W (Tc)
BUK7505-30A,127
MOSFET N-CH 30V 75A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
30 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
75A (Tc)
10V
5mOhm @ 25A, 10V
-
±20V
6000 pF @ 25 V
230W (Tc)
BUK76150-55A,118
MOSFET N-CH 55V 11A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
D2PAK
55 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
11A (Tc)
10V
150mOhm @ 5A, 10V
5.5 nC @ 10 V
±20V
322 pF @ 25 V
36W (Tc)
PMN28UN,165
MOSFET N-CH 12V 5.7A 6TSOP
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
SC-74, SOT-457
N-Channel
SC-74
12 V
-55°C ~ 150°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
700mV @ 1mA (Typ)
5.7A (Tc)
1.8V, 4.5V
34mOhm @ 2A, 4.5V
10.1 nC @ 4.5 V
±8V
740 pF @ 10 V
1.75W (Tc)
PHX27NQ11T,127
MOSFET N-CH 110V 20.8A TO220F
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3 Full Pack, Isolated Tab
N-Channel
TO-220F
110 V
-55°C ~ 150°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
20.8A (Tc)
10V
50mOhm @ 14A, 10V
30 nC @ 10 V
±20V
1240 pF @ 25 V
50W (Tc)
PHP66NQ03LT,127
MOSFET N-CH 25V 66A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
25 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
66A (Tc)
5V, 10V
10.5mOhm @ 25A, 10V
12 nC @ 5 V
±20V
860 pF @ 25 V
93W (Tc)
PHM30NQ10T,518
MOSFET N-CH 100V 37.6A 8HVSON
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-VDFN Exposed Pad
N-Channel
8-HVSON (5x6)
100 V
-55°C ~ 150°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
37.6A (Tc)
10V
20mOhm @ 18A, 10V
53.7 nC @ 10 V
±20V
3600 pF @ 25 V
62.5W (Tc)
BUK761R3-30E,118
MOSFET N-CH 30V 120A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
D2PAK
30 V
-55°C ~ 175°C (TJ)
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
120A (Tc)
10V
1.3mOhm @ 25A, 10V
154 nC @ 10 V
±20V
11960 pF @ 25 V
357W (Tc)

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.