Automotive, AEC-Q101, STripFET™ F7 Series, Single FETs, MOSFETs

Results:
4
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Mounting Type
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Results remaining4
Applied Filters:
Automotive, AEC-Q101, STripFET™ F7
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeDrain to Source Voltage (Vdss)Operating TemperatureGradePackage / CaseTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Vgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualificationRds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ Vgs
STLD257N4F7AG
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
1,400 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
8-PowerWDFN
MOSFET (Metal Oxide)
Automotive, AEC-Q101, STripFET™ F7
-
120A (Tc)
4V @ 250µA
6.5V, 10V
±20V
5400 pF @ 25 V
158W (Tc)
PowerFlat™ (5x6) Dual Side
-
1.1mOhm @ 60A, 10V
66.5 nC @ 10 V
STL64N4F7AG
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
8-PowerVDFN
MOSFET (Metal Oxide)
Automotive, AEC-Q101, STripFET™ F7
-
64A (Tc)
4V @ 250µA
10V
±20V
637 pF @ 25 V
65W (Tc)
PowerFlat™ (5x6)
-
8.5mOhm @ 32A, 10V
9.8 nC @ 10 V
STL19N3LLH6AG
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
30 V
-55°C ~ 175°C (TJ)
-
8-PowerVDFN
MOSFET (Metal Oxide)
Automotive, AEC-Q101, STripFET™ F7
-
10A (Tc)
2.5V @ 250µA
4.5V, 10V
±20V
321 pF @ 25 V
50W (Tc)
PowerFlat™ (5x6)
-
33mOhm @ 5A, 10V
3.7 nC @ 4.5 V
STK184N4F7AG
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
SC-100, SOT-669
MOSFET (Metal Oxide)
Automotive, AEC-Q101, STripFET™ F7
-
100A (Tc)
4V @ 250µA
10V
±20V
2750 pF @ 25 V
136W (Tc)
LFPAK56, Power-SO8
-
2mOhm @ 50A, 10V
35 nC @ 10 V

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.