GigaMOS™, HiPerFET™, TrenchT2™ Series, Single FETs, MOSFETs

Results:
4
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Operating Temperature
FET Feature
FET Type
Grade
Mounting Type
Vgs(th) (Max) @ Id
Supplier Device Package
Qualification
Package / Case
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining4
Applied Filters:
GigaMOS™, HiPerFET™, TrenchT2™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeSupplier Device PackageOperating TemperatureGradeTechnologyPackage / CaseSeriesFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
MMIX1F230N20T
MOSFET N-CH 200V 168A 24SMPD
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
24-SMPD
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
24-PowerSMD, 21 Leads
GigaMOS™, HiPerFET™, TrenchT2™
-
200 V
168A (Tc)
10V
8.3mOhm @ 60A, 10V
5V @ 8mA
378 nC @ 10 V
±20V
28000 pF @ 25 V
600W (Tc)
-
MMIX1F160N30T
MOSFET N-CH 300V 102A 24SMPD
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
24-SMPD
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
24-PowerSMD, 21 Leads
GigaMOS™, HiPerFET™, TrenchT2™
-
300 V
102A (Tc)
10V
20mOhm @ 60A, 10V
5V @ 8mA
335 nC @ 10 V
±20V
2800 pF @ 25 V
570W (Tc)
-
MMIX1F420N10T
MOSFET N-CH 100V 334A 24SMPD
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
24-SMPD
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
24-PowerSMD, 21 Leads
GigaMOS™, HiPerFET™, TrenchT2™
-
100 V
334A (Tc)
10V
2.6mOhm @ 60A, 10V
5V @ 8mA
670 nC @ 10 V
±20V
4700 pF @ 10 V
680W (Tc)
-
MMIX1F180N25T
MOSFET N-CH 250V 132A 24SMPD
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
24-SMPD
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
24-PowerSMD, 21 Leads
GigaMOS™, HiPerFET™, TrenchT2™
-
250 V
132A (Tc)
10V
13mOhm @ 90A, 10V
5V @ 8mA
364 nC @ 10 V
±20V
23800 pF @ 25 V
570W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.