G2R™ Series, Single FETs, MOSFETs

Results:
5
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Supplier Device Package
Package / Case
Vgs (Max)
FET Feature
Mounting Type
Drain to Source Voltage (Vdss)
Operating Temperature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining5
Applied Filters:
G2R™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseOperating TemperatureGradeSupplier Device PackageFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsSeriesTechnologyDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
G2R50MT33K
3300V 50M TO-247-4 SIC MOSFET
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Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-4
-55°C ~ 175°C (TJ)
-
TO-247-4
Standard
63A (Tc)
50mOhm @ 40A, 20V
G2R™
SiCFET (Silicon Carbide)
3300 V
20V
3.5V @ 10mA (Typ)
340 nC @ 20 V
+25V, -10V
7301 pF @ 1000 V
536W (Tc)
-
G2R120MT33J
SIC MOSFET N-CH TO263-7
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
-55°C ~ 175°C (TJ)
-
TO-263-7
-
35A
156mOhm @ 20A, 20V
G2R™
SiCFET (Silicon Carbide)
3300 V
20V
-
145 nC @ 20 V
+25V, -10V
3706 pF @ 1000 V
-
-
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
-55°C ~ 175°C (TJ)
-
TO-247-3
-
5A (Tc)
1.2Ohm @ 2A, 20V
G2R™
SiCFET (Silicon Carbide)
1700 V
20V
5.5V @ 500µA
11 nC @ 20 V
+25V, -10V
111 pF @ 1000 V
44W (Tc)
-
G2R1000MT17J
SIC MOSFET N-CH 3A TO263-7
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
-55°C ~ 175°C (TJ)
-
TO-263-7
-
3A (Tc)
1.2Ohm @ 2A, 20V
G2R™
SiCFET (Silicon Carbide)
1700 V
20V
4V @ 2mA
-
+20V, -10V
139 pF @ 1000 V
54W (Tc)
-
G2R1000MT33J
SIC MOSFET N-CH 4A TO263-7
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
-55°C ~ 175°C (TJ)
-
TO-263-7
-
4A (Tc)
1.2Ohm @ 2A, 20V
G2R™
SiCFET (Silicon Carbide)
3300 V
20V
3.5V @ 2mA
21 nC @ 20 V
+20V, -5V
238 pF @ 1000 V
74W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.