CoolSIC™ M1 Series, Single FETs, MOSFETs

Results:
9
Manufacturer
Series
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
FET Feature
FET Type
Grade
Drain to Source Voltage (Vdss)
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining9
Applied Filters:
CoolSIC™ M1
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseFET TypeDrain to Source Voltage (Vdss)Operating TemperatureGradeFET FeatureCurrent - Continuous Drain (Id) @ 25°CTechnologyDrive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ IdPower Dissipation (Max)Supplier Device PackageQualificationSeriesInput Capacitance (Ciss) (Max) @ VdsRds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)
IMBG65R163M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
N-Channel
650 V
-55°C ~ 175°C (TJ)
-
-
17A (Tc)
SiCFET (Silicon Carbide)
18V
5.7V @ 1.7mA
85W (Tc)
PG-TO263-7-12
-
CoolSIC™ M1
320 pF @ 400 V
217mOhm @ 5.7A, 18V
10 nC @ 18 V
+23V, -5V
IMBG65R083M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
N-Channel
650 V
-55°C ~ 175°C (TJ)
-
-
28A (Tc)
SiCFET (Silicon Carbide)
18V
5.7V @ 3.3mA
126W (Tc)
PG-TO263-7-12
-
CoolSIC™ M1
624 pF @ 400 V
111mOhm @ 11.2A, 18V
19 nC @ 18 V
+23V, -5V
IMBG65R260M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
N-Channel
650 V
-55°C ~ 175°C (TJ)
-
-
6A (Tc)
SiCFET (Silicon Carbide)
18V
5.7V @ 1.1mA
65W (Tc)
PG-TO263-7-12
-
CoolSIC™ M1
201 pF @ 400 V
346mOhm @ 3.6A, 18V
6 nC @ 18 V
+23V, -5V
IMW65R048M1HXKSA1
MOSFET 650V NCH SIC TRENCH
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
N-Channel
650 V
-55°C ~ 150°C (TJ)
-
-
39A (Tc)
SiCFET (Silicon Carbide)
18V
5.7V @ 6mA
125W (Tc)
PG-TO247-3-41
-
CoolSIC™ M1
1118 pF @ 400 V
64mOhm @ 20.1A, 18V
33 nC @ 18 V
+23V, -5V
IMW65R027M1HXKSA1
MOSFET 650V NCH SIC TRENCH
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
N-Channel
650 V
-55°C ~ 150°C (TJ)
-
-
47A (Tc)
SiCFET (Silicon Carbide)
18V
5.7V @ 11mA
189W (Tc)
PG-TO247-3-41
-
CoolSIC™ M1
2131 pF @ 400 V
34mOhm @ 38.3A, 18V
62 nC @ 18 V
+23V, -5V
IMW65R072M1HXKSA1
MOSFET 650V NCH SIC TRENCH
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
N-Channel
650 V
-55°C ~ 150°C (TJ)
-
-
26A (Tc)
SiCFET (Silicon Carbide)
18V
5.7V @ 4mA
96W (Tc)
PG-TO247-3-41
-
CoolSIC™ M1
744 pF @ 400 V
94mOhm @ 13.3A, 18V
22 nC @ 18 V
+23V, -5V
IMBG65R107M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
N-Channel
650 V
-55°C ~ 175°C (TJ)
-
-
24A (Tc)
SiCFET (Silicon Carbide)
18V
5.7V @ 2.6mA
110W (Tc)
PG-TO263-7-12
-
CoolSIC™ M1
496 pF @ 400 V
141mOhm @ 8.9A, 18V
15 nC @ 18 V
+23V, -5V
IMBG65R072M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
N-Channel
650 V
-55°C ~ 175°C (TJ)
-
-
33A (Tc)
SiCFET (Silicon Carbide)
18V
5.7V @ 4mA
140W (Tc)
PG-TO263-7-12
-
CoolSIC™ M1
744 pF @ 400 V
94mOhm @ 13.3A, 18V
22 nC @ 18 V
+23V, -5V
IMZA65R107M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
N-Channel
650 V
-55°C ~ 150°C (TJ)
-
-
20A (Tc)
SiCFET (Silicon Carbide)
18V
5.7V @ 3mA
75W (Tc)
PG-TO247-3-41
-
CoolSIC™ M1
496 pF @ 400 V
142mOhm @ 8.9A, 18V
15 nC @ 18 V
+23V, -5V

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.