DTMOSVI Series, Single FETs, MOSFETs

Results:
20
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Current - Continuous Drain (Id) @ 25°C
Package / Case
Mounting Type
Operating Temperature
FET Feature
FET Type
Grade
Drain to Source Voltage (Vdss)
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining20
Applied Filters:
DTMOSVI
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperatureDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureSeriesCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackagePackage / CaseQualification
TK065U65Z,RQ
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
141 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
38A (Ta)
10V
65mOhm @ 19A, 10V
4V @ 1.69mA
62 nC @ 10 V
±30V
3650 pF @ 300 V
270W (Tc)
TOLL
8-PowerSFN
-
TK190A65Z,S4X
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
2 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
15A (Ta)
10V
190mOhm @ 7.5A, 10V
4V @ 610µA
25 nC @ 10 V
±30V
1370 pF @ 300 V
40W (Tc)
TO-220SIS
TO-220-3 Full Pack
-
TK090Z65Z,S1F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
30A (Ta)
10V
90mOhm @ 15A, 10V
4V @ 1.27mA
47 nC @ 10 V
±30V
2780 pF @ 300 V
230W (Tc)
TO-247-4L(T)
TO-247-4
-
TK110Z65Z,S1F
POWER MOSFET TRANSISTOR TO-247-4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
24A (Ta)
10V
110mOhm @ 12A, 10V
4V @ 1.02mA
40 nC @ 10 V
±30V
2250 pF @ 300 V
190W (Tc)
TO-247-4L(T)
TO-247-4
-
TK090A65Z,S4X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
30A (Ta)
10V
90mOhm @ 15A, 10V
4V @ 1.27mA
47 nC @ 10 V
±30V
2780 pF @ 300 V
45W (Tc)
TO-220SIS
TO-220-3 Full Pack
-
TK110N65Z,S1F
POWER MOSFET TRANSISTOR TO-247(O
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
24A (Ta)
10V
110mOhm @ 12A, 10V
4V @ 1.02mA
40 nC @ 10 V
±30V
2250 pF @ 300 V
190W (Tc)
TO-247
TO-247-3
-
TK065Z65Z,S1F
POWER MOSFET TRANSISTOR TO-247-4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
38A (Ta)
10V
65mOhm @ 19A, 10V
4V @ 1.69mA
62 nC @ 10 V
±30V
3650 pF @ 300 V
270W (Tc)
TO-247-4L(T)
TO-247-4
-
TK110A65Z,S4X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
24A (Ta)
10V
110mOhm @ 12A, 10V
4V @ 1.02mA
40 nC @ 10 V
±30V
2250 pF @ 300 V
45W (Tc)
TO-220SIS
TO-220-3 Full Pack
-
TK190U65Z,RQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
15A (Ta)
10V
190mOhm @ 7.5A, 10V
4V @ 610µA
25 nC @ 10 V
±30V
1370 pF @ 300 V
130W (Tc)
TOLL
8-PowerSFN
-
TK155U65Z,RQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
18A (Ta)
10V
155mOhm @ 9A, 10V
4V @ 730µA
29 nC @ 10 V
±30V
1635 pF @ 300 V
150W (Tc)
TOLL
8-PowerSFN
-
TK090U65Z,RQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
30A (Ta)
10V
90mOhm @ 15A, 10V
4V @ 1.27mA
47 nC @ 10 V
±30V
2780 pF @ 300 V
230W (Tc)
TOLL
8-PowerSFN
-
TK099V65Z,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
30A (Ta)
10V
99mOhm @ 15A, 10V
4V @ 1.27mA
47 nC @ 10 V
±30V
2780 pF @ 300 V
230W (Tc)
5-DFN (8x8)
4-VSFN Exposed Pad
-
TK170V65Z,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
18A (Ta)
10V
170mOhm @ 9A, 10V
4V @ 730µA
29 nC @ 10 V
±30V
1635 pF @ 300 V
150W (Tc)
4-DFN-EP (8x8)
4-VSFN Exposed Pad
-
TK210V65Z,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
15A (Ta)
10V
210mOhm @ 7.5A, 10V
4V @ 610µA
25 nC @ 10 V
±30V
1370 pF @ 300 V
130W (Tc)
4-DFN-EP (8x8)
4-VSFN Exposed Pad
-
TK155A65Z,S4X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
18A (Ta)
10V
155mOhm @ 9A, 10V
4V @ 730µA
29 nC @ 10 V
±30V
1635 pF @ 300 V
40W (Tc)
TO-220SIS
TO-220-3 Full Pack
-
TK040Z65Z,S1F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
57A (Ta)
10V
40mOhm @ 28.5A, 10V
4V @ 2.85mA
105 nC @ 10 V
±30V
6250 pF @ 300 V
360W (Tc)
TO-247-4L(T)
TO-247-4
-
TK110U65Z,RQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
24A (Ta)
10V
110mOhm @ 12A, 10V
4V @ 1.02mA
40 nC @ 10 V
±30V
2250 pF @ 300 V
190W (Tc)
TOLL
8-PowerSFN
-
TK125V65Z,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
24A (Ta)
10V
125mOhm @ 12A, 10V
4V @ 1.02mA
40 nC @ 10 V
±30V
2250 pF @ 300 V
190W (Tc)
4-DFN-EP (8x8)
4-VSFN Exposed Pad
-
TK090N65Z,S1F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
30A (Ta)
10V
90mOhm @ 15A, 10V
4V @ 1.27mA
47 nC @ 10 V
±30V
2780 pF @ 300 V
230W (Tc)
TO-247
TO-247-3
-
TK065N65Z,S1F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C
650 V
-
MOSFET (Metal Oxide)
-
DTMOSVI
38A (Ta)
10V
65mOhm @ 19A, 10V
4V @ 1.69mA
62 nC @ 10 V
±30V
3650 pF @ 300 V
270W (Tc)
TO-247
TO-247-3
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.