TrenchFET® Series, Single FETs, MOSFETs

Results:
2,234
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining2,234
Applied Filters:
TrenchFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeDrain to Source Voltage (Vdss)GradeSeriesTechnologyFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SI2318CDS-T1-GE3
MOSFET N-CH 40V 5.6A SOT23-3
1+
$0.2274
5+
$0.2148
10+
$0.2021
Quantity
1,097,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
N-Channel
40 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
2.5V @ 250µA
5.6A (Tc)
4.5V, 10V
42mOhm @ 4.3A, 10V
9 nC @ 10 V
±20V
340 pF @ 20 V
1.25W (Ta), 2.1W (Tc)
-
SI9407BDY-T1-GE3
MOSFET P-CH 60V 4.7A 8SO
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
859,880 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
P-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
3V @ 250µA
4.7A (Tc)
4.5V, 10V
120mOhm @ 3.2A, 10V
22 nC @ 10 V
±20V
600 pF @ 30 V
2.4W (Ta), 5W (Tc)
-
SI2305CDS-T1-GE3
MOSFET P-CH 8V 5.8A SOT23-3
1+
$0.1648
5+
$0.1556
10+
$0.1465
Quantity
718,090 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
P-Channel
8 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
1V @ 250µA
5.8A (Tc)
1.8V, 4.5V
35mOhm @ 4.4A, 4.5V
30 nC @ 8 V
±8V
960 pF @ 4 V
960mW (Ta), 1.7W (Tc)
-
TP0610K-T1-GE3
MOSFET P-CH 60V 185MA SOT23-3
1+
$0.0368
5+
$0.0347
10+
$0.0327
Quantity
555,555 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
P-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
3V @ 250µA
185mA (Ta)
4.5V, 10V
6Ohm @ 500mA, 10V
1.7 nC @ 15 V
±20V
23 pF @ 25 V
350mW (Ta)
-
SI2307BDS-T1-E3
MOSFET P-CH 30V 2.5A SOT23-3
1+
$0.2028
5+
$0.1915
10+
$0.1803
Quantity
543,899 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
P-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
3V @ 250µA
2.5A (Ta)
4.5V, 10V
78mOhm @ 3.2A, 10V
15 nC @ 10 V
±20V
380 pF @ 15 V
750mW (Ta)
-
SI2308BDS-T1-GE3
MOSFET N-CH 60V 2.3A SOT23-3
1+
$0.1825
5+
$0.1724
10+
$0.1623
Quantity
513,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
N-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
3V @ 250µA
2.3A (Tc)
4.5V, 10V
156mOhm @ 1.9A, 10V
6.8 nC @ 10 V
±20V
190 pF @ 30 V
1.09W (Ta), 1.66W (Tc)
-
SI8425DB-T1-E1
MOSFET P-CH 20V 4WLCSP
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
500,335 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
4-UFBGA, WLCSP
4-WLCSP (1.6x1.6)
P-Channel
20 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
900mV @ 250µA
5.9A (Ta)
1.8V, 4.5V
23mOhm @ 2A, 4.5V
110 nC @ 10 V
±10V
2800 pF @ 10 V
1.1W (Ta), 2.7W (Tc)
-
SI1012R-T1-GE3
MOSFET N-CH 20V 500MA SC75A
1+
$0.1141
5+
$0.1077
10+
$0.1014
Quantity
483,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SC-75, SOT-416
SC-75A
N-Channel
20 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
900mV @ 250µA
500mA (Ta)
1.8V, 4.5V
700mOhm @ 600mA, 4.5V
0.75 nC @ 4.5 V
±6V
-
150mW (Ta)
-
SQ2309ES-T1_GE3
MOSFET P-CH 60V 1.7A TO236
1+
$0.2028
5+
$0.1915
10+
$0.1803
Quantity
362,596 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
P-Channel
60 V
Automotive
TrenchFET®
MOSFET (Metal Oxide)
-
2.5V @ 250µA
1.7A (Tc)
4.5V, 10V
336mOhm @ 3.8A, 10V
8.5 nC @ 10 V
±20V
265 pF @ 25 V
2W (Tc)
AEC-Q101
SQ2389ES-T1_GE3
MOSFET P-CH 40V 4.1A SOT23-3
1+
$0.2282
5+
$0.2155
10+
$0.2028
Quantity
287,108 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
P-Channel
40 V
Automotive
TrenchFET®
MOSFET (Metal Oxide)
-
2.5V @ 250µA
4.1A (Tc)
4.5V, 10V
94mOhm @ 10A, 10V
12 nC @ 10 V
±20V
420 pF @ 20 V
3W (Tc)
AEC-Q101
TP0610K-T1-E3
MOSFET P-CH 60V 185MA SOT23-3
1+
$0.1775
5+
$0.1676
10+
$0.1577
Quantity
267,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
P-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
3V @ 250µA
185mA (Ta)
4.5V, 10V
6Ohm @ 500mA, 10V
1.7 nC @ 15 V
±20V
23 pF @ 25 V
350mW (Ta)
-
SI3493BDV-T1-E3
MOSFET P-CH 20V 8A 6TSOP
1+
$0.2282
5+
$0.2155
10+
$0.2028
Quantity
266,190 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-6 Thin, TSOT-23-6
6-TSOP
P-Channel
20 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
900mV @ 250µA
8A (Tc)
1.8V, 4.5V
27.5mOhm @ 7A, 4.5V
43.5 nC @ 5 V
±8V
1805 pF @ 10 V
2.08W (Ta), 2.97W (Tc)
-
SI7129DN-T1-GE3
MOSFET P-CH 30V 35A PPAK1212-8
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
261,272 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-50°C ~ 150°C (TJ)
PowerPAK® 1212-8
PowerPAK® 1212-8
P-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
2.8V @ 250µA
35A (Tc)
4.5V, 10V
11.4mOhm @ 14.4A, 10V
71 nC @ 10 V
±20V
3345 pF @ 15 V
3.8W (Ta), 52.1W (Tc)
-
SIRA14DP-T1-GE3
MOSFET N-CH 30V 58A PPAK SO-8
1+
$0.3803
5+
$0.3592
10+
$0.3380
Quantity
224,888 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SO-8
PowerPAK® SO-8
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
2.2V @ 250µA
58A (Tc)
4.5V, 10V
5.1mOhm @ 10A, 10V
29 nC @ 10 V
+20V, -16V
1450 pF @ 15 V
3.6W (Ta), 31.2W (Tc)
-
SI4401DDY-T1-GE3
MOSFET P-CH 40V 16.1A 8SO
1+
$0.3676
5+
$0.3472
10+
$0.3268
Quantity
216,088 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
P-Channel
40 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
2.5V @ 250µA
16.1A (Tc)
4.5V, 10V
15mOhm @ 10.2A, 10V
95 nC @ 10 V
±20V
3007 pF @ 20 V
2.5W (Ta), 6.3W (Tc)
-
SI2304DDS-T1-GE3
MOSFET N-CH 30V 3.3A/3.6A SOT23
1+
$0.0761
5+
$0.0718
10+
$0.0676
Quantity
206,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
2.2V @ 250µA
3.3A (Ta), 3.6A (Tc)
4.5V, 10V
60mOhm @ 3.2A, 10V
6.7 nC @ 10 V
±20V
235 pF @ 15 V
1.1W (Ta), 1.7W (Tc)
-
SI1308EDL-T1-GE3
MOSFET N-CH 30V 1.4A SOT323
1+
$0.0761
5+
$0.0718
10+
$0.0676
Quantity
200,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SC-70, SOT-323
SC-70-3
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
1.5V @ 250µA
1.4A (Tc)
2.5V, 10V
132mOhm @ 1.4A, 10V
4.1 nC @ 10 V
±12V
105 pF @ 15 V
400mW (Ta), 500mW (Tc)
-
SI2312CDS-T1-GE3
MOSFET N-CH 20V 6A SOT23-3
1+
$0.1268
5+
$0.1197
10+
$0.1127
Quantity
193,738 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
N-Channel
20 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
1V @ 250µA
6A (Tc)
1.8V, 4.5V
31.8mOhm @ 5A, 4.5V
18 nC @ 5 V
±8V
865 pF @ 10 V
1.25W (Ta), 2.1W (Tc)
-
SIR646DP-T1-GE3
MOSFET N-CH 40V 60A PPAK SO-8
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SO-8
PowerPAK® SO-8
N-Channel
40 V
TrenchFET®
MOSFET (Metal Oxide)
-
2.2V @ 250µA
60A (Tc)
4.5V, 10V
3.8mOhm @ 20A, 10V
51 nC @ 10 V
±20V
2230 pF @ 20 V
5W (Ta), 54W (Tc)
SI8416DB-T1-GE3
MOSFET N-CH 8V 16A 6MICROFOOT
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-UFBGA
6-microfoot
N-Channel
8 V
TrenchFET®
MOSFET (Metal Oxide)
-
800mV @ 250µA
16A (Tc)
1.2V, 4.5V
23mOhm @ 1.5A, 4.5V
26 nC @ 4.5 V
±5V
1470 pF @ 4 V
2.77W (Ta), 13W (Tc)

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.