Cool MOS™ Series, Single FETs, MOSFETs

Results:
8
Manufacturer
Series
Supplier Device Package
Power Dissipation (Max)
Package / Case
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Mounting Type
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining8
Applied Filters:
Cool MOS™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseInput Capacitance (Ciss) (Max) @ VdsGradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs (Max)Power Dissipation (Max)Drain to Source Voltage (Vdss)QualificationSeries
GC11N65K
N650V,RD(MAX)<360M@10V,VTH2.5V~4
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
-
TO-252
MOSFET (Metal Oxide)
Standard
11A (Tc)
4V @ 250µA
-
10V
360mOhm @ 5.5A, 10V
±30V
179W (Tc)
-
-
Cool MOS™
GC11N65D5
N650V, 11A,RD<360M@10V,VTH2.5V~4
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
-
8-DFN (4.9x5.75)
MOSFET (Metal Oxide)
Standard
11A (Tc)
4V @ 250µA
-
10V
360mOhm @ 5.5A, 10V
±30V
78W (Tc)
-
-
Cool MOS™
GC20N65F
N650V,RD(MAX)<170M@10V,VTH2.5V~4
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
-
-
TO-220F
MOSFET (Metal Oxide)
Standard
20A (Tc)
4V @ 250µA
-
10V
190mOhm @ 10A, 10V
±30V
40W (Tc)
-
-
Cool MOS™
GC11N65F
N650V,RD(MAX)<360M@10V,VTH2.5V~4
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
-
-
TO-220F
MOSFET (Metal Oxide)
Standard
11A (Tc)
4V @ 250µA
-
10V
360mOhm @ 5.5A, 10V
±30V
38.5W (Tc)
-
-
Cool MOS™
GC11N65M
N650V,RD(MAX)<360M@10V,VTH2.5V~4
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
-
TO-263
MOSFET (Metal Oxide)
Standard
11A (Tc)
4V @ 250µA
-
10V
360mOhm @ 5.5A, 10V
±30V
78W (Tc)
-
-
Cool MOS™
GC20N65T
N650V,RD(MAX)<170M@10V,VTH2.5V~4
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
-
TO-220
MOSFET (Metal Oxide)
Standard
20A (Tc)
4.5V @ 250µA
-
10V
170mOhm @ 10A, 10V
±30V
151W (Tc)
-
-
Cool MOS™
GC20N65Q
N650V,RD(MAX)<170M@10V,VTH2.5V~4
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
1724 pF @ 100 V
-
TO-247
MOSFET (Metal Oxide)
Standard
20A (Tc)
4.5V @ 250µA
39 nC @ 10 V
10V
170mOhm @ 10A, 10V
±30V
151W (Tc)
650 V
-
Cool MOS™
GC11N65T
N650V,RD(MAX)<360M@10V,VTH2.5V~4
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
901 pF @ 50 V
-
TO-220
MOSFET (Metal Oxide)
Standard
11A (Tc)
4V @ 250µA
21 nC @ 10 V
10V
360mOhm @ 5.5A, 10V
±30V
192W (Tc)
650 V
-
Cool MOS™

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.