StrongIRFET™ Series, Single FETs, MOSFETs

Results:
48
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Drive Voltage (Max Rds On, Min Rds On)
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Results remaining48
Applied Filters:
StrongIRFET™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseFET TypeOperating TemperatureGradeSupplier Device PackageTechnologySeriesFET FeatureVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IRF135B203
MOSFET N-CH 135V 129A TO220-3
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
53,506 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
-55°C ~ 175°C (TJ)
-
PG-TO220-3
MOSFET (Metal Oxide)
StrongIRFET™
-
4V @ 250µA
135 V
129A (Tc)
10V
8.4mOhm @ 77A, 10V
270 nC @ 10 V
±20V
9700 pF @ 50 V
441W (Tc)
-
IRL40SC209
MOSFET N-CH 40V 478A D2PAK
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
53,116 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
N-Channel
-55°C ~ 175°C (TJ)
-
D2PAK-7
MOSFET (Metal Oxide)
StrongIRFET™
-
2.4V @ 250µA
40 V
478A (Tc)
4.5V, 10V
0.8mOhm @ 100A, 10V
267 nC @ 4.5 V
±20V
15270 pF @ 25 V
375W (Tc)
-
IRFH7085TRPBF
MOSFET N-CH 60V 100A PQFN
1+
$1.7746
5+
$1.6761
10+
$1.5775
Quantity
50,080 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
-55°C ~ 150°C (TJ)
-
PQFN (5x6)
MOSFET (Metal Oxide)
StrongIRFET™
-
3.7V @ 150µA
60 V
100A (Tc)
6V, 10V
3.2mOhm @ 75A, 10V
165 nC @ 10 V
±20V
6460 pF @ 25 V
156W (Tc)
-
IRFH7545TRPBF
MOSFET N-CH 60V 85A PQFN
1+
$1.3944
5+
$1.3169
10+
$1.2394
Quantity
23,197 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
-55°C ~ 150°C (TJ)
-
PQFN (5x6)
MOSFET (Metal Oxide)
StrongIRFET™
-
3.7V @ 100µA
60 V
85A (Tc)
6V, 10V
5.2mOhm @ 51A, 10V
110 nC @ 10 V
±20V
3890 pF @ 25 V
83W (Tc)
-
IRFR7546TRPBF
MOSFET N-CH 60V 56A DPAK
1+
$0.4482
5+
$0.4233
10+
$0.3984
Quantity
14,885 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
-55°C ~ 175°C (TJ)
-
DPAK
MOSFET (Metal Oxide)
StrongIRFET™
-
3.7V @ 100µA
60 V
56A (Tc)
6V, 10V
7.9mOhm @ 43A, 10V
87 nC @ 10 V
±20V
3020 pF @ 25 V
99W (Tc)
-
IRL40SC228
MOSFET N-CH 40V 557A D2PAK
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
12,400 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
N-Channel
-55°C ~ 175°C (TJ)
-
D2PAK (7-Lead)
MOSFET (Metal Oxide)
StrongIRFET™
-
2.4V @ 250µA
40 V
557A (Tc)
4.5V, 10V
0.65mOhm @ 100A, 10V
307 nC @ 4.5 V
±20V
19680 pF @ 25 V
416W (Tc)
-
IRL7472L1TRPBF
MOSFET N-CH 40V 375A DIRECTFET
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
11,180 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
DirectFET™ Isometric L8
N-Channel
-55°C ~ 175°C (TJ)
-
DirectFET™ Isometric L8
MOSFET (Metal Oxide)
StrongIRFET™
-
2.5V @ 250µA
40 V
375A (Tc)
4.5V, 10V
0.59mOhm @ 195A, 10V
330 nC @ 4.5 V
±20V
20082 pF @ 25 V
3.8W (Ta), 341W (Tc)
-
IRF200P223
MOSFET N-CH 200V 100A TO247AC
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
9,827 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
N-Channel
-55°C ~ 175°C (TJ)
-
TO-247AC
MOSFET (Metal Oxide)
StrongIRFET™
-
4V @ 270µA
200 V
100A (Tc)
10V
11.5mOhm @ 60A, 10V
102 nC @ 10 V
±20V
5094 pF @ 50 V
313W (Tc)
-
IRFS7730TRL7PP
MOSFET N-CH 75V 240A D2PAK
1+
$1.5718
5+
$1.4845
10+
$1.3972
Quantity
9,242 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-7, D²Pak (6 Leads + Tab)
N-Channel
-55°C ~ 175°C (TJ)
-
D2PAK (7-Lead)
MOSFET (Metal Oxide)
StrongIRFET™
-
3.7V @ 250µA
75 V
240A (Tc)
6V, 10V
2mOhm @ 100A, 10V
428 nC @ 10 V
±20V
13970 pF @ 25 V
375W (Tc)
-
IRF7580MTRPBF
IRF7580 - 12V-300V N-CHANNEL POW
1+
$1.2169
5+
$1.1493
10+
$1.0817
Quantity
8,718 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
DirectFET™ Isometric ME
N-Channel
-55°C ~ 175°C (TJ)
-
DirectFET™ Isometric ME
MOSFET (Metal Oxide)
StrongIRFET™
-
3.7V @ 150µA
60 V
114A (Tc)
6V, 10V
3.6mOhm @ 70A, 10V
180 nC @ 10 V
±20V
6510 pF @ 25 V
115W (Tc)
-
IRF7580MTRPBF
IRF7580 - 12V-300V N-CHANNEL POW
1+
$1.2169
5+
$1.1493
10+
$1.0817
Quantity
8,718 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
DirectFET™ Isometric ME
N-Channel
-55°C ~ 175°C (TJ)
-
DirectFET™ Isometric ME
MOSFET (Metal Oxide)
StrongIRFET™
-
3.7V @ 150µA
60 V
114A (Tc)
6V, 10V
3.6mOhm @ 70A, 10V
180 nC @ 10 V
±20V
6510 pF @ 25 V
115W (Tc)
-
IRFB7740PBF
MOSFET N-CH 75V 87A TO220AB
1+
$0.6338
5+
$0.5986
10+
$0.5634
Quantity
8,594 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
-55°C ~ 175°C (TJ)
-
TO-220AB
MOSFET (Metal Oxide)
StrongIRFET™
-
3.7V @ 100µA
75 V
87A (Tc)
6V, 10V
7.3mOhm @ 52A, 10V
122 nC @ 10 V
±20V
4650 pF @ 25 V
143W (Tc)
-
IRF200P222
MOSFET N-CH 200V 182A TO247AC
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
7,200 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
N-Channel
-55°C ~ 175°C (TJ)
-
TO-247AC
MOSFET (Metal Oxide)
StrongIRFET™
-
4V @ 270µA
200 V
182A (Tc)
10V
6.6mOhm @ 82A, 10V
203 nC @ 10 V
±20V
9820 pF @ 50 V
556W (Tc)
-
IRF100P218AKMA1
MOSFET N-CH 100V 209A TO247AC
1+
$6.0845
5+
$5.7465
10+
$5.4085
Quantity
6,111 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
N-Channel
-55°C ~ 175°C (TJ)
-
PG-TO247-3
MOSFET (Metal Oxide)
StrongIRFET™
-
3.8V @ 278µA
100 V
209A (Tc)
6V, 10V
1.28mOhm @ 100A, 10V
412 nC @ 10 V
±20V
24000 pF @ 50 V
3.8W (Ta), 556W (Tc)
-
IRL40T209ATMA1
MOSFET N-CH 40V 300A 8HSOF
1+
$10.3944
5+
$9.8169
10+
$9.2394
Quantity
6,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerSFN
N-Channel
-55°C ~ 175°C (TJ)
-
PG-HSOF-8-1
MOSFET (Metal Oxide)
StrongIRFET™
-
2.4V @ 250µA
40 V
300A (Tc)
4.5V, 10V
0.72mOhm @ 100A, 10V
269 nC @ 4.5 V
±20V
16000 pF @ 20 V
500W (Tc)
-
IRF100P219AKMA1
MOSFET N-CH 100V TO247AC
1+
$4.5634
5+
$4.3099
10+
$4.0563
Quantity
6,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
N-Channel
-55°C ~ 175°C (TJ)
-
PG-TO247-3
MOSFET (Metal Oxide)
StrongIRFET™
-
3.8V @ 278µA
100 V
203A (Tc)
6V, 10V
1.7mOhm @ 100A, 10V
210 nC @ 10 V
±20V
12020 pF @ 50 V
3.8W (Ta), 341W (Tc)
-
IRF60R217
MOSFET N-CH 60V 58A DPAK
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
4,001 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
-55°C ~ 175°C (TJ)
-
TO-252AA (DPAK)
MOSFET (Metal Oxide)
StrongIRFET™
-
3.7V @ 50µA
60 V
58A (Tc)
6V, 10V
9.9mOhm @ 35A, 10V
66 nC @ 10 V
±20V
2170 pF @ 25 V
83W (Tc)
-
IPP014N06NF2SAKMA2
TRENCH 40<-<100V PG-TO220-3
1+
$3.6761
5+
$3.4718
10+
$3.2676
Quantity
4,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
-55°C ~ 175°C (TJ)
-
PG-TO220-3-U05
MOSFET (Metal Oxide)
StrongIRFET™
-
3.3V @ 246µA
60 V
39A (Ta), 198A (Tc)
6V, 10V
1.4mOhm @ 100A, 10V
305 nC @ 10 V
±20V
13800 pF @ 30 V
3.8W (Ta), 300W (Tc)
-
IRF250P224
MOSFET N-CH 250V 96A TO247AC
1+
$5.3239
5+
$5.0282
10+
$4.7324
Quantity
3,200 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
N-Channel
-55°C ~ 175°C (TJ)
-
TO-247AC
MOSFET (Metal Oxide)
StrongIRFET™
-
4V @ 270µA
250 V
96A (Tc)
10V
12mOhm @ 58A, 10V
203 nC @ 10 V
±20V
9915 pF @ 50 V
313W (Tc)
-
IRF250P225
MOSFET N-CH 250V 69A TO247AC
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
2,170 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
N-Channel
-55°C ~ 175°C (TJ)
-
TO-247AC
MOSFET (Metal Oxide)
StrongIRFET™
-
4V @ 270µA
250 V
69A (Tc)
10V
22mOhm @ 41A, 10V
96 nC @ 10 V
±20V
4897 pF @ 50 V
313W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.