PowerMESH™ Series, Single FETs, MOSFETs

Results:
34
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Operating Temperature
Mounting Type
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining34
Applied Filters:
PowerMESH™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperaturePackage / CaseSupplier Device PackageGradeTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STFW3N150
MOSFET N-CH 1500V 2.5A ISOWATT
1+
$1.2625
5+
$1.1924
10+
$1.1223
Quantity
266,900 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-3P-3 Full Pack
TO-3PF
-
MOSFET (Metal Oxide)
PowerMESH™
-
2.5A (Tc)
5V @ 250µA
1500 V
10V
9Ohm @ 1.3A, 10V
29.3 nC @ 10 V
±30V
939 pF @ 25 V
63W (Tc)
-
STW4N150
MOSFET N-CH 1500V 4A TO247-3
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
118,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
PowerMESH™
-
4A (Tc)
5V @ 250µA
1500 V
10V
7Ohm @ 2A, 10V
50 nC @ 10 V
±30V
1300 pF @ 25 V
160W (Tc)
-
STH3N150-2
MOSFET N-CH 1500V 2.5A H2PAK
1+
$3.5493
5+
$3.3521
10+
$3.1549
Quantity
37,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
TO-263-3, D2PAK (2 Leads + Tab), Variant
H²PAK
-
MOSFET (Metal Oxide)
PowerMESH™
-
2.5A (Tc)
5V @ 250µA
1500 V
10V
9Ohm @ 1.3A, 10V
29.3 nC @ 10 V
±30V
939 pF @ 25 V
140W (Tc)
-
STP5NK80Z
MOSFET N-CH 800V 4.3A TO220AB
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
30,903 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
PowerMESH™
-
4.3A (Tc)
4.5V @ 100µA
800 V
10V
2.4Ohm @ 2.15A, 10V
45.5 nC @ 10 V
±30V
910 pF @ 25 V
110W (Tc)
-
STP3N150
MOSFET N-CH 1500V 2.5A TO220AB
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
30,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
PowerMESH™
-
2.5A (Tc)
5V @ 250µA
1500 V
10V
9Ohm @ 1.3A, 10V
29.3 nC @ 10 V
±30V
939 pF @ 25 V
140W (Tc)
-
STW3N150
MOSFET N-CH 1500V 2.5A TO247-3
1+
$1.7746
5+
$1.6761
10+
$1.5775
Quantity
30,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
PowerMESH™
-
2.5A (Tc)
5V @ 250µA
1500 V
10V
9Ohm @ 1.3A, 10V
29.3 nC @ 10 V
±30V
939 pF @ 25 V
140W (Tc)
-
STW9N150
MOSFET N-CH 1500V 8A TO247-3
1+
$3.2958
5+
$3.1127
10+
$2.9296
Quantity
11,766 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
PowerMESH™
-
8A (Tc)
5V @ 250µA
1500 V
10V
2.5Ohm @ 4A, 10V
89.3 nC @ 10 V
±30V
3255 pF @ 25 V
320W (Tc)
-
STFW3N170
MOSFET N-CH 1700V 2.6A ISOWATT
1+
$2.6721
5+
$2.5237
10+
$2.3752
Quantity
11,400 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
TO-3P-3 Full Pack
TO-3PF
-
MOSFET (Metal Oxide)
PowerMESH™
-
2.6A (Tc)
5V @ 250µA
1700 V
10V
13Ohm @ 1.3A, 10V
44 nC @ 10 V
±30V
1100 pF @ 100 V
63W (Tc)
-
STP4N150
MOSFET N-CH 1500V 4A TO220AB
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
5,795 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
PowerMESH™
-
4A (Tc)
5V @ 250µA
1500 V
10V
7Ohm @ 2A, 10V
50 nC @ 10 V
±30V
1300 pF @ 25 V
160W (Tc)
-
STP5NK80ZFP
MOSFET N-CH 800V 4.3A TO220FP
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
2,953 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
PowerMESH™
-
4.3A (Tc)
4.5V @ 100µA
800 V
10V
2.4Ohm @ 2.15A, 10V
45.5 nC @ 10 V
±30V
910 pF @ 25 V
30W (Tc)
-
STFW4N150
MOSFET N-CH 1500V 4A ISOWATT
1+
$6.8451
5+
$6.4648
10+
$6.0845
Quantity
1,555 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-3P-3 Full Pack
TO-3PF
-
MOSFET (Metal Oxide)
PowerMESH™
-
4A (Tc)
5V @ 250µA
1500 V
10V
7Ohm @ 2A, 10V
50 nC @ 10 V
±30V
1300 pF @ 25 V
63W (Tc)
-
STW3N170
MOSFET N-CH 1700V 2.6A TO247-3
1+
$50.7042
5+
$47.8873
10+
$45.0704
Quantity
798 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
PowerMESH™
-
2.6A (Tc)
5V @ 250µA
1700 V
10V
13Ohm @ 1.3A, 10V
44 nC @ 10 V
±30V
1100 pF @ 100 V
160mW
-
STW11NB80
MOSFET N-CH 800V 11A TO247-3
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
103 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
PowerMESH™
-
11A (Tc)
5V @ 250µA
800 V
10V
800mOhm @ 5.5A, 10V
70 nC @ 10 V
±30V
2900 pF @ 25 V
190W (Tc)
-
STY34NB50
MOSFET N-CH 500V 34A MAX247
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
2 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-247-3
MAX247™
-
MOSFET (Metal Oxide)
PowerMESH™
-
34A (Tc)
5V @ 250µA
500 V
10V
130mOhm @ 17A, 10V
223 nC @ 10 V
±30V
9100 pF @ 25 V
450W (Tc)
-
STH15NB50FI
MOSFET N-CH 500V 10.5A ISOWAT218
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
ISOWATT-218-3
ISOWATT-218
-
MOSFET (Metal Oxide)
PowerMESH™
-
10.5A (Tc)
5V @ 250µA
500 V
10V
360mOhm @ 7.5A, 10V
80 nC @ 10 V
±30V
3400 pF @ 25 V
80W (Tc)
-
IRF830
MOSFET N-CH 500V 4.5A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
PowerMESH™
-
4.5A (Tc)
4V @ 250µA
500 V
10V
1.5Ohm @ 2.7A, 10V
30 nC @ 10 V
±20V
610 pF @ 25 V
100W (Tc)
-
STP5NB60
MOSFET N-CH 600V 5A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
PowerMESH™
-
5A (Tc)
5V @ 250µA
600 V
10V
2Ohm @ 2.5A, 10V
30 nC @ 10 V
±30V
884 pF @ 25 V
100W (Tc)
-
STW13NB60
MOSFET N-CH 600V 13A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
PowerMESH™
-
13A (Tc)
5V @ 250µA
600 V
10V
540mOhm @ 6.5A, 10V
82 nC @ 10 V
±30V
2600 pF @ 25 V
190W (Tc)
-
STP4NB80
MOSFET N-CH 800V 4A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
PowerMESH™
-
4A (Tc)
5V @ 250µA
800 V
10V
3.3Ohm @ 2A, 10V
29 nC @ 10 V
±30V
920 pF @ 25 V
100W (Tc)
-
STFV3N150
MOSFET N-CH 1500V 2.5A TO220-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack, Isolated Tab
TO-220-3
-
MOSFET (Metal Oxide)
PowerMESH™
-
2.5A (Tc)
5V @ 250µA
1500 V
10V
9Ohm @ 1.3A, 10V
29.3 nC @ 10 V
±30V
939 pF @ 25 V
30W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.