U-MOSIII Series, Single FETs, MOSFETs

Results:
38
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Gate Charge (Qg) (Max) @ Vgs
Package / Case
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Drain to Source Voltage (Vdss)
Vgs (Max)
FET Feature
FET Type
Mounting Type
Grade
Qualification
Technology
Results remaining38
Applied Filters:
U-MOSIII
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperatureDrain to Source Voltage (Vdss)Package / CaseGradeSupplier Device PackageTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On, Min Rds On)Vgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SSM3K15AMFV,L3F
1+
$0.0507
5+
$0.0479
10+
$0.0451
Quantity
21,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
30 V
SOT-723
-
VESM
MOSFET (Metal Oxide)
U-MOSIII
-
100mA (Ta)
3.6Ohm @ 10mA, 4V
1.5V @ 100µA
-
2.5V, 4V
±20V
13.5 pF @ 3 V
150mW (Ta)
-
SSM3K35AMFV,L3F
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
10,800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
20 V
SOT-723
-
VESM
MOSFET (Metal Oxide)
U-MOSIII
-
250mA (Ta)
1.1Ohm @ 150mA, 4.5V
1V @ 100µA
0.34 nC @ 4.5 V
1.2V, 4.5V
±10V
36 pF @ 10 V
500mW (Ta)
-
SSM3K36MFV,L3F
1+
$0.1521
5+
$0.1437
10+
$0.1352
Quantity
5,036 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
20 V
SOT-723
-
VESM
MOSFET (Metal Oxide)
U-MOSIII
-
500mA (Ta)
630mOhm @ 200mA, 5V
1V @ 1mA
1.23 nC @ 4 V
1.5V, 5V
±10V
46 pF @ 10 V
150mW (Ta)
-
2SK4017(Q)
1+
$0.2789
5+
$0.2634
10+
$0.2479
Quantity
1,599 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
60 V
TO-251-3 Stub Leads, IPak
-
PW-MOLD2
MOSFET (Metal Oxide)
U-MOSIII
-
5A (Ta)
100mOhm @ 2.5A, 10V
2.5V @ 1mA
15 nC @ 10 V
4V, 10V
±20V
730 pF @ 10 V
20W (Tc)
-
2SJ668(TE16L1,NQ)
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
1,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C
60 V
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PW-MOLD
MOSFET (Metal Oxide)
U-MOSIII
-
5A (Ta)
170mOhm @ 2.5A, 10V
2V @ 1mA
15 nC @ 10 V
4V, 10V
±20V
700 pF @ 10 V
20W (Tc)
-
SSM3K15ACTC,L3F
1+
$0.1014
5+
$0.0958
10+
$0.0901
Quantity
768 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
30 V
SC-101, SOT-883
-
CST3C
MOSFET (Metal Oxide)
U-MOSIII
-
100mA (Ta)
3.6Ohm @ 10mA, 4V
1.5V @ 100µA
-
2.5V, 4V
±20V
13.5 pF @ 3 V
500mW (Ta)
-
SSM3J304T(TE85L,F)
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
20 V
TO-236-3, SC-59, SOT-23-3
-
TSM
MOSFET (Metal Oxide)
U-MOSIII
-
2.3A (Ta)
127mOhm @ 1A, 4V
-
6.1 nC @ 4 V
1.8V, 4V
±8V
335 pF @ 10 V
700mW (Ta)
-
SSM3J36FS,LF
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
20 V
SC-75, SOT-416
-
SSM
MOSFET (Metal Oxide)
U-MOSIII
-
330mA (Ta)
1.31Ohm @ 100mA, 4.5V
1V @ 1mA
1.2 nC @ 4 V
1.5V, 4.5V
±8V
43 pF @ 10 V
150mW (Ta)
-
SSM5G10TU(TE85L,F)
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
20 V
6-SMD (5 Leads), Flat Lead
-
UFV
MOSFET (Metal Oxide)
U-MOSIII
Schottky Diode (Isolated)
1.5A (Ta)
213mOhm @ 1A, 4V
1V @ 1mA
6.4 nC @ 4 V
1.8V, 4V
±8V
250 pF @ 10 V
500mW (Ta)
-
SSM4K27CTTPL3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
20 V
4-SMD, No Lead
-
CST4 (1.2x0.8)
MOSFET (Metal Oxide)
U-MOSIII
-
500mA (Ta)
205mOhm @ 250mA, 4V
1.1V @ 1mA
-
1.8V, 4V
±12V
174 pF @ 10 V
400mW (Ta)
-
SSM3K15AFU,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
30 V
SC-70, SOT-323
-
USM
MOSFET (Metal Oxide)
U-MOSIII
-
100mA (Ta)
3.6Ohm @ 10mA, 4V
1.5V @ 100µA
-
2.5V, 4V
±20V
13.5 pF @ 3 V
150mW (Ta)
-
SSM3K123TU,LF
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
20 V
3-SMD, Flat Leads
-
UFM
MOSFET (Metal Oxide)
U-MOSIII
-
4.2A (Ta)
28mOhm @ 3A, 4V
1V @ 1mA
13.6 nC @ 4 V
1.5V, 4V
±10V
1010 pF @ 10 V
500mW (Ta)
-
SSM3K15ACT(TPL3)
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
30 V
SC-101, SOT-883
-
CST3
MOSFET (Metal Oxide)
U-MOSIII
-
100mA (Ta)
3.6Ohm @ 10mA, 4V
1.5V @ 100µA
-
2.5V, 4V
±20V
13.5 pF @ 3 V
100mW (Ta)
-
TPCF8B01(TE85L,F,M
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
20 V
8-SMD, Flat Lead
-
VS-8 (2.9x1.5)
MOSFET (Metal Oxide)
U-MOSIII
Schottky Diode (Isolated)
2.7A (Ta)
110mOhm @ 1.4A, 4.5V
1.2V @ 200µA
6 nC @ 5 V
1.8V, 4.5V
±8V
470 pF @ 10 V
330mW (Ta)
-
TPCF8102(TE85L,F,M
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
20 V
8-SMD, Flat Lead
-
VS-8 (2.9x1.5)
MOSFET (Metal Oxide)
U-MOSIII
-
6A (Ta)
30mOhm @ 3A, 4.5V
1.2V @ 200µA
19 nC @ 5 V
1.8V, 4.5V
±8V
1550 pF @ 10 V
700mW (Ta)
-
TPC8110(TE12L,Q,M)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
40 V
8-SOIC (0.173", 4.40mm Width)
-
8-SOP (5.5x6.0)
MOSFET (Metal Oxide)
U-MOSIII
-
8A (Ta)
25mOhm @ 4A, 10V
2V @ 1mA
48 nC @ 10 V
4V, 10V
±20V
2180 pF @ 10 V
1W (Ta)
-
TPCP8001-H(TE85LFM
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
30 V
8-SMD, Flat Lead
-
PS-8 (2.9x2.4)
MOSFET (Metal Oxide)
U-MOSIII
-
7.2A (Ta)
16mOhm @ 3.6A, 10V
2.3V @ 1mA
11 nC @ 10 V
4.5V, 10V
±20V
640 pF @ 10 V
1W (Ta), 30W (Tc)
-
SSM3K329R,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
30 V
SOT-23-3 Flat Leads
-
SOT-23F
MOSFET (Metal Oxide)
U-MOSIII
-
3.5A (Ta)
126mOhm @ 1A, 4V
1V @ 1mA
1.5 nC @ 4 V
1.8V, 4V
±12V
123 pF @ 15 V
1W (Ta)
-
SSM3K116TU,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 150°C (TJ)
30 V
3-SMD, Flat Leads
-
UFM
MOSFET (Metal Oxide)
U-MOSIII
-
2.2A (Ta)
100mOhm @ 500mA, 4.5V
1.1V @ 100µA
-
2.5V, 4.5V
±12V
245 pF @ 10 V
500mW (Ta)
-
2SK3662(F)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
60 V
TO-220-3 Full Pack
-
TO-220NIS
MOSFET (Metal Oxide)
U-MOSIII
-
35A (Ta)
12.5mOhm @ 18A, 10V
2.5V @ 1mA
91 nC @ 10 V
4V, 10V
±20V
5120 pF @ 10 V
35W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.