SuperFET™ Series, Single FETs, MOSFETs

Results:
66
Manufacturer
Series
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Package / Case
Current - Continuous Drain (Id) @ 25°C
Operating Temperature
Grade
Mounting Type
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Qualification
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Technology
Results remaining66
Applied Filters:
SuperFET™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FCPF11N60T
MOSFET N-CH 600V 11A TO220F
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
69,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
11A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
380mOhm @ 5.5A, 10V
52 nC @ 10 V
±30V
1490 pF @ 25 V
36W (Tc)
-
FCD5N60TM
MOSFET N-CH 600V 4.6A DPAK
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
22,917 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-
MOSFET (Metal Oxide)
-
4.6A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
950mOhm @ 2.3A, 10V
16 nC @ 10 V
±30V
600 pF @ 25 V
54W (Tc)
-
FCD5N60-F085
MOSFET N-CH 600V 4.6A DPAK
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
17,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
Automotive
MOSFET (Metal Oxide)
-
4.6A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
1.1Ohm @ 4.6A, 10V
21 nC @ 10 V
±30V
570 pF @ 25 V
54W (Tj)
AEC-Q101
FCH47N60F-F133
MOSFET N-CH 600V 47A TO247-3
1+
$16.9859
5+
$16.0423
10+
$15.0986
Quantity
13,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
-
47A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
70mOhm @ 23.5A, 10V
270 nC @ 10 V
±30V
8000 pF @ 25 V
417W (Tc)
-
FCPF11N60F
MOSFET N-CH 600V 11A TO220F
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
11A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
380mOhm @ 5.5A, 10V
52 nC @ 10 V
±30V
1490 pF @ 25 V
36W (Tc)
-
FCB20N60FTM
MOSFET N-CH 600V 20A D2PAK
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
9,100 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-
MOSFET (Metal Oxide)
-
20A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
190mOhm @ 10A, 10V
98 nC @ 10 V
±30V
3080 pF @ 25 V
208W (Tc)
-
FCB20N60TM
MOSFET N-CH 600V 20A D2PAK
1+
$9.6338
5+
$9.0986
10+
$8.5634
Quantity
7,289 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-
MOSFET (Metal Oxide)
-
20A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
190mOhm @ 10A, 10V
98 nC @ 10 V
±30V
3080 pF @ 25 V
208W (Tc)
-
FCPF11N60
MOSFET N-CH 600V 11A TO220F
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
6,942 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
11A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
380mOhm @ 5.5A, 10V
52 nC @ 10 V
±30V
1490 pF @ 25 V
36W (Tc)
-
FCPF11N60
POWER MOSFET, N-CHANNEL, SUPERFE
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
6,942 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
11A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
380mOhm @ 5.5A, 10V
52 nC @ 10 V
±30V
1490 pF @ 25 V
36W (Tc)
-
FCP4N60
MOSFET N-CH 600V 3.9A TO220-3
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
3,575 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
3.9A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
1.2Ohm @ 2A, 10V
16.6 nC @ 10 V
±30V
540 pF @ 25 V
50W (Tc)
-
FCP4N60
POWER FIELD-EFFECT TRANSISTOR, 3
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
3,575 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
3.9A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
1.2Ohm @ 2A, 10V
16.6 nC @ 10 V
±30V
540 pF @ 25 V
50W (Tc)
-
FCPF11N65
MOSFET N-CH 650V 11A TO220F
1+
$1.7746
5+
$1.6761
10+
$1.5775
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
11A (Tc)
5V @ 250µA
SuperFET™
650 V
-
380mOhm @ 5.5A, 10V
52 nC @ 10 V
-
1490 pF @ 25 V
36W (Tc)
-
FCA47N60F
MOSFET N-CH 600V 47A TO3PN
1+
$15.2113
5+
$14.3662
10+
$13.5211
Quantity
2,700 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-3P-3, SC-65-3
TO-3PN
-
MOSFET (Metal Oxide)
-
47A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
73mOhm @ 23.5A, 10V
270 nC @ 10 V
±30V
8000 pF @ 25 V
417W (Tc)
-
FCPF20N60
MOSFET N-CH 600V 20A TO220F
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
2,037 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
20A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
190mOhm @ 10A, 10V
98 nC @ 10 V
±30V
3080 pF @ 25 V
39W (Tc)
-
FCD5N60TM-WS
MOSFET N-CH 600V 4.6A DPAK
1+
$1.5211
5+
$1.4366
10+
$1.3521
Quantity
1,885 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-
MOSFET (Metal Oxide)
-
4.6A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
950mOhm @ 2.3A, 10V
16 nC @ 10 V
±30V
600 pF @ 25 V
54W (Tc)
-
FCA47N60
MOSFET N-CH 600V 47A TO3PN
1+
$15.2113
5+
$14.3662
10+
$13.5211
Quantity
1,285 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-3P-3, SC-65-3
TO-3PN
-
MOSFET (Metal Oxide)
-
47A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
70mOhm @ 23.5A, 10V
270 nC @ 10 V
±30V
8000 pF @ 25 V
417W (Tc)
-
FCP11N60F
MOSFET N-CH 600V 11A TO220-3
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
981 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
11A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
380mOhm @ 5.5A, 10V
52 nC @ 10 V
±30V
1490 pF @ 25 V
125W (Tc)
-
FCH47N60F
MOSFET N-CH 600V 47A TO247-3
1+
$16.4789
5+
$15.5634
10+
$14.6479
Quantity
900 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
-
47A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
73mOhm @ 23.5A, 10V
270 nC @ 10 V
±30V
8000 pF @ 25 V
417W (Tc)
-
FCA20N60F
MOSFET N-CH 600V 20A TO3PN
1+
$4.3099
5+
$4.0704
10+
$3.8310
Quantity
747 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-3P-3, SC-65-3
TO-3PN
-
MOSFET (Metal Oxide)
-
20A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
190mOhm @ 10A, 10V
98 nC @ 10 V
±30V
3080 pF @ 25 V
208W (Tc)
-
FCPF11N60_G
MOSFET N-CH 600V 11A TO220F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
MOSFET (Metal Oxide)
-
11A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
380mOhm @ 5.5A, 10V
52 nC @ 10 V
±30V
1490 pF @ 25 V
36W (Tc)

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.