PerFET™ Series, Single FETs, MOSFETs

Results:
28
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Operating Temperature
Grade
Mounting Type
Vgs(th) (Max) @ Id
Qualification
Package / Case
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Drain to Source Voltage (Vdss)
Technology
Results remaining28
Applied Filters:
PerFET™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeDrain to Source Voltage (Vdss)Operating TemperaturePackage / CaseTechnologySeriesFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Power Dissipation (Max)QualificationGradeInput Capacitance (Ciss) (Max) @ VdsSupplier Device Package
TQM025NH04LCR RLG
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
2.2V @ 250µA
26A (Ta), 100A (Tc)
4.5V, 10V
2.5mOhm @ 50A, 10V
95 nC @ 10 V
±16V
136W (Tc)
AEC-Q101
Automotive
6228 pF @ 25 V
8-PDFNU (4.9x5.75)
TQM025NH04CR-V RLG
Contact us
Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
3.6V @ 250µA
26A (Ta), 100A (Tc)
7V, 10V
2.5mOhm @ 50A, 10V
89 nC @ 10 V
±20V
136W (Tc)
AEC-Q101
Automotive
5691 pF @ 25 V
8-PDFNU (4.9x5.75)
TQM025NH04LCR-V RLG
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
2.2V @ 250µA
26A (Ta), 100A (Tc)
4.5V, 10V
2.5mOhm @ 50A, 10V
95 nC @ 10 V
±16V
136W (Tc)
AEC-Q101
Automotive
6228 pF @ 25 V
8-PDFNU (4.9x5.75)
TQM019NH04CR-V RLG
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
3.6V @ 250µA
30A (Ta), 100A (Tc)
7V, 10V
1.9mOhm @ 50A, 10V
134 nC @ 10 V
±20V
150W (Tc)
AEC-Q101
Automotive
9044 pF @ 25 V
8-PDFNU (4.9x5.75)
TSM056NH04LCR RLG
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
2.2V @ 250µA
18A (Ta), 54A (Tc)
4.5V, 10V
5.6mOhm @ 27A, 10V
30.4 nC @ 10 V
±16V
78.9W (Tc)
-
-
1940 pF @ 25 V
8-PDFNU (5x6)
TSM025NH04CR RLG
40V, 100A, SINGLE N-CHANNEL POWE
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
3.6V @ 250µA
26A (Ta), 100A (Tc)
7V, 10V
2.5mOhm @ 50A, 10V
59 nC @ 10 V
±20V
136W (Tc)
-
-
3794 pF @ 25 V
8-PDFNU (5x6)
TSM025NH04LCR RLG
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
2.2V @ 250µA
26A (Ta), 100A (Tc)
4.5V, 10V
2.5mOhm @ 50A, 10V
63.3 nC @ 10 V
±16V
136W (Tc)
-
-
4179 pF @ 25 V
8-PDFNU (5x6)
TQM056NH04LCR RLG
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
2.2V @ 250µA
17A (Ta), 54A (Tc)
4.5V, 10V
5.6mOhm @ 27A, 10V
45.6 nC @ 10 V
±16V
78.9W (Tc)
AEC-Q101
Automotive
-
8-PDFN (5x6)
TSM043NH04LCR RLG
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
2.2V @ 250µA
20A (Ta), 54A (Tc)
4.5V, 10V
4.3mOhm @ 27A, 10V
42 nC @ 10 V
±16V
100W (Tc)
-
-
2480 pF @ 25 V
8-PDFNU (5x6)
TQM019NH04CR RLG
40V, 100A, SINGLE N-CHANNEL POWE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
3.6V @ 250µA
30A (Ta), 100A (Tc)
7V, 10V
1.9mOhm @ 50A, 10V
134 nC @ 10 V
±20V
150W (Tc)
AEC-Q101
Automotive
9044 pF @ 25 V
8-PDFNU (4.9x5.75)
TSM019NH04CR RLG
40V, 100A, SINGLE N-CHANNEL POWE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
3.6V @ 250µA
35A (Ta), 100A (Tc)
7V, 10V
1.9mOhm @ 50A, 10V
89 nC @ 10 V
±20V
150W (Tc)
-
-
6029 pF @ 25 V
8-PDFNU (5x6)
TSM032NH04LCR RLG
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
2.2V @ 250µA
25A (Ta), 81A (Tc)
4.5V, 10V
3.2mOhm @ 40A, 10V
50 nC @ 10 V
±16V
115W (Tc)
-
-
3007 pF @ 25 V
8-PDFNU (5x6)
TQM032NH04CR RLG
40V, 81A, SINGLE N-CHANNEL POWER
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
3.6V @ 250µA
23A (Ta), 81A (Tc)
7V, 10V
3.2mOhm @ 40A, 10V
67.5 nC @ 10 V
±20V
115W (Tc)
AEC-Q101
Automotive
4344 pF @ 25 V
8-PDFNU (4.9x5.75)
TSM043NH04CR RLG
40V, 54A, SINGLE N-CHANNEL POWER
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
3.6V @ 250µA
20A (Ta), 54A (Tc)
7V, 10V
4.3mOhm @ 27A, 10V
37 nC @ 10 V
±20V
100W (Tc)
-
-
2531 pF @ 25 V
8-PDFNU (5x6)
TQM025NH04CR RLG
40V, 100A, SINGLE N-CHANNEL POWE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
3.6V @ 250µA
26A (Ta), 100A (Tc)
7V, 10V
2.5mOhm @ 50A, 10V
89 nC @ 10 V
±20V
136W (Tc)
AEC-Q101
Automotive
5691 pF @ 25 V
8-PDFNU (4.9x5.75)
TQM032NH04LCR RLG
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
2.2V @ 250µA
23A (Ta), 81A (Tc)
4.5V, 10V
3.2mOhm @ 40A, 10V
75 nC @ 10 V
±16V
115W (Tc)
AEC-Q101
Automotive
-
8-PDFN (5x6)
TSM070NH04CR RLG
40V, 54A, SINGLE N-CHANNEL POWER
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
3.6V @ 250µA
15A (Ta), 54A (Tc)
7V, 10V
7mOhm @ 27A, 10V
19 nC @ 10 V
±20V
46.8W (Tc)
-
-
1337 pF @ 25 V
8-PDFNU (5x6)
TSM070NH04LCR RLG
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
2.2V @ 250µA
15A (Ta), 54A (Tc)
4.5V, 10V
7mOhm @ 27A, 10V
23 nC @ 10 V
±16V
46.8W (Tc)
-
-
1446 pF @ 25 V
8-PDFNU (5x6)
TSM019NH04LCR RLG
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
PerFET™
-
2.2V @ 250µA
35A (Ta), 100A (Tc)
4.5V, 10V
1.9mOhm @ 50A, 10V
104 nC @ 10 V
±16V
150W (Tc)
-
-
6282 pF @ 25 V
8-PDFNU (5x6)
TSM070NH04LCV RGG
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 150°C (TJ)
8-PowerWDFN
MOSFET (Metal Oxide)
PerFET™
-
2.2V @ 250µA
14A (Ta), 54A (Tc)
4.5V, 10V
7mOhm @ 27A, 10V
24 nC @ 10 V
±16V
36W (Tc)
-
-
1376 pF @ 25 V
8-PDFN (3.1x3.1)

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.