Depletion Series, Single FETs, MOSFETs

Results:
62
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Mounting Type
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Technology
Vgs (Max)
FET Feature
Grade
Qualification
Results remaining62
Applied Filters:
Depletion
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTY08N50D2
MOSFET N-CH 500V 800MA TO252
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
144,468 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
TO-252AA
MOSFET (Metal Oxide)
Depletion Mode
800mA (Tc)
-
Depletion
500 V
-
4.6Ohm @ 400mA, 0V
12.7 nC @ 5 V
±20V
312 pF @ 25 V
60W (Tc)
-
IXTY08N50D2-TRL
MOSFET N-CH 500V 800MA TO252AA
1+
$5.7042
5+
$5.3873
10+
$5.0704
Quantity
65,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
TO-252AA
MOSFET (Metal Oxide)
Depletion Mode
800mA (Tj)
4.5V @ 25µA
Depletion
500 V
0V
4.6Ohm @ 400mA, 0V
12.7 nC @ 5 V
±20V
312 pF @ 25 V
60W (Tc)
-
IXTY1R6N50D2
MOSFET N-CH 500V 1.6A TO252
1+
$43.0986
5+
$40.7042
10+
$38.3099
Quantity
31,518 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
TO-252AA
MOSFET (Metal Oxide)
Depletion Mode
1.6A (Tc)
-
Depletion
500 V
-
2.3Ohm @ 800mA, 0V
23.7 nC @ 5 V
±20V
645 pF @ 25 V
100W (Tc)
-
IXTU01N100D
MOSFET N-CH 1000V 400MA TO251
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
2,900 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
-
TO-251AA
MOSFET (Metal Oxide)
Depletion Mode
400mA (Tc)
4.5V @ 25µA
Depletion
1000 V
0V
80Ohm @ 50mA, 0V
5.8 nC @ 5 V
±20V
100 pF @ 25 V
1.1W (Ta), 25W (Tc)
-
IXTA08N100D2
MOSFET N-CH 1000V 800MA TO263
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
870 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
TO-263AA
MOSFET (Metal Oxide)
Depletion Mode
800mA (Tc)
-
Depletion
1000 V
-
21Ohm @ 400mA, 0V
14.6 nC @ 5 V
±20V
325 pF @ 25 V
60W (Tc)
-
IXTT20N50D
MOSFET N-CH 500V 20A TO268
1+
$50.7042
5+
$47.8873
10+
$45.0704
Quantity
780 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
TO-268AA
MOSFET (Metal Oxide)
Depletion Mode
20A (Tc)
3.5V @ 250mA
Depletion
500 V
10V
330mOhm @ 10A, 10V
125 nC @ 10 V
±30V
2500 pF @ 25 V
400W (Tc)
-
IXTP01N100D
MOSFET N-CH 1000V 400MA TO220AB
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
TO-220-3
MOSFET (Metal Oxide)
Depletion Mode
400mA (Tc)
4.5V @ 25µA
Depletion
1000 V
0V
80Ohm @ 50mA, 0V
5.8 nC @ 5 V
±20V
100 pF @ 25 V
1.1W (Ta), 25W (Tc)
-
IXTA1N170DHV
MOSFET N-CH 1700V 1A TO263
1+
$32.9577
5+
$31.1268
10+
$29.2958
Quantity
580 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
TO-263HV
MOSFET (Metal Oxide)
Depletion Mode
1A (Tc)
-
Depletion
1700 V
10V
16Ohm @ 500mA, 0V
47 nC @ 5 V
±20V
3090 pF @ 25 V
290W (Tc)
-
IXTA6N50D2
MOSFET N-CH 500V 6A TO263
1+
$20.2817
5+
$19.1549
10+
$18.0282
Quantity
322 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
TO-263AA
MOSFET (Metal Oxide)
Depletion Mode
6A (Tc)
-
Depletion
500 V
-
500mOhm @ 3A, 0V
96 nC @ 5 V
±20V
2800 pF @ 25 V
300W (Tc)
-
IXTA3N100D2HV
MOSFET N-CH 1000V 3A TO263HV
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
277 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
TO-263HV
MOSFET (Metal Oxide)
Depletion Mode
3A (Tj)
4.5V @ 250µA
Depletion
1000 V
0V
6Ohm @ 1.5A, 0V
37.5 nC @ 5 V
±20V
1020 pF @ 25 V
125W (Tc)
-
IXTA1R6N100D2HV
MOSFET N-CH 1000V 1.6A TO263HV
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
200 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
TO-263HV
MOSFET (Metal Oxide)
Depletion Mode
1.6A (Tj)
4.5V @ 100µA
Depletion
1000 V
0V
10Ohm @ 800mA, 0V
27 nC @ 5 V
±20V
645 pF @ 10 V
100W (Tc)
-
IXTT10N100D2
MOSFET N-CH 1000V 10A TO268
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
30 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
TO-268AA
MOSFET (Metal Oxide)
Depletion Mode
10A (Tc)
-
Depletion
1000 V
10V
1.5Ohm @ 5A, 10V
200 nC @ 5 V
±20V
5320 pF @ 25 V
695W (Tc)
-
IXTP08N100D2
MOSFET N-CH 1000V 800MA TO220AB
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
25 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
TO-220-3
MOSFET (Metal Oxide)
Depletion Mode
800mA (Tc)
-
Depletion
1000 V
-
21Ohm @ 400mA, 0V
14.6 nC @ 5 V
±20V
325 pF @ 25 V
60W (Tc)
-
IXTT16N20D2
MOSFET N-CH 200V 16A TO268
1+
$50.7042
5+
$47.8873
10+
$45.0704
Quantity
4 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
TO-268AA
MOSFET (Metal Oxide)
Depletion Mode
16A (Tc)
-
Depletion
200 V
-
73mOhm @ 8A, 0V
208 nC @ 5 V
±20V
5500 pF @ 25 V
695W (Tc)
-
IXTY08N100D2-TRL
MOSFET N-CH 1000V 800MA TO252
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
TO-252AA
MOSFET (Metal Oxide)
Depletion Mode
800mA (Tj)
4V @ 25µA
Depletion
1000 V
0V
21Ohm @ 400mA, 0V
14.6 nC @ 5 V
±20V
325 pF @ 25 V
60W (Tc)
-
IXTY01N100D-TRL
MOSFET N-CH 1000V 400MA TO252AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
TO-252AA
MOSFET (Metal Oxide)
Depletion Mode
400mA (Tc)
4.5V @ 25µA
Depletion
1000 V
0V
80Ohm @ 50mA, 0V
5.8 nC @ 5 V
±20V
100 pF @ 25 V
1.1W (Ta), 25W (Tc)
-
IXTP6N50D2
MOSFET N-CH 500V 6A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
TO-220-3
MOSFET (Metal Oxide)
Depletion Mode
6A (Tc)
-
Depletion
500 V
-
500mOhm @ 3A, 0V
96 nC @ 5 V
±20V
2800 pF @ 25 V
300W (Tc)
-
IXTH16N10D2
MOSFET N-CH 100V 16A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-247-3
-
TO-247 (IXTH)
MOSFET (Metal Oxide)
Depletion Mode
16A (Tc)
-
Depletion
100 V
0V
64mOhm @ 8A, 0V
225 nC @ 5 V
±20V
5700 pF @ 25 V
830W (Tc)
-
IXTH2N170D2
MOSFET N-CH 1700V 2A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247 (IXTH)
MOSFET (Metal Oxide)
Depletion Mode
2A (Tj)
-
Depletion
1700 V
0V
6.5Ohm @ 1A, 0V
110 nC @ 5 V
±20V
3650 pF @ 10 V
568W (Tc)
-
IXTU02N50D
MOSFET N-CH 500V 200MA TO251
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
-
TO-251AA
MOSFET (Metal Oxide)
Depletion Mode
200mA (Tc)
5V @ 25µA
Depletion
500 V
10V
30Ohm @ 50mA, 0V
-
±20V
120 pF @ 25 V
1.1W (Ta), 25W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.