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SRFET™ Series, 单 FET，MOSFET
Results:
28
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Package / Case
Supplier Device Package
Operating Temperature
FET Feature
Vgs (Max)
FET Type
Grade
Mounting Type
Drain to Source Voltage (Vdss)
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining：28
Applied Filters:
SRFET™
Select | Image | Product Detail | Price | Availability | ECAD Model | Mounting Type | Operating Temperature | FET Type | Drain to Source Voltage (Vdss) | Grade | Technology | Series | FET Feature | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Package / Case | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
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 | 1+ $0.5070 5+ $0.4789 10+ $0.4507 More Price | 42,535 Available Can ship immediately Ships from: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | SRFET™ | - | 3.9mOhm @ 20A, 10V | 1.9V @ 250µA | 8-PowerSMD, Flat Leads | 8-DFN (5x6) | 32A (Ta), 70A (Tc) | 4.5V, 10V | 23 nC @ 10 V | ±12V | 1350 pF @ 15 V | 6.2W (Ta), 31W (Tc) | - | ||
 | 1+ $0.7606 5+ $0.7183 10+ $0.6761 More Price | 10,744 Available Can ship immediately Ships from: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 10mOhm @ 13.5A, 10V | 3V @ 250µA | 8-PowerVDFN | 8-DFN-EP (3x3) | 13.5A (Ta), 36A (Tc) | 4.5V, 10V | 48 nC @ 10 V | ±20V | 4250 pF @ 15 V | 3.1W (Ta), 23W (Tc) | - | ||
 | Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 1.7mOhm @ 20A, 10V | 2V @ 250µA | 8-PowerSMD, Flat Leads | 8-DFN (5x6) | 30A (Ta), 85A (Tc) | 4.5V, 10V | 76 nC @ 10 V | ±12V | 9600 pF @ 15 V | 2.5W (Ta), 83W (Tc) | - | ||
 | Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 14.5mOhm @ 11.2A, 10V | 2.4V @ 250µA | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 13A (Ta) | 4.5V, 10V | 31 nC @ 10 V | ±12V | 1885 pF @ 15 V | 3.1W (Ta) | - | ||
| Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 6.8mOhm @ 16.5A, 10V | 2.4V @ 250µA | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 16.5A (Ta) | 4.5V, 10V | 77 nC @ 10 V | ±12V | 5000 pF @ 15 V | 3.1W (Ta) | - | ||
| Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 2.4mOhm @ 20A, 10V | 2V @ 250µA | 8-PowerSMD, Flat Leads | 8-DFN (5x6) | 24A (Ta), 85A (Tc) | 4.5V, 10V | 51 nC @ 10 V | ±12V | 6780 pF @ 15 V | 2.5W (Ta), 83W (Tc) | ||||
 | Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 3.7mOhm @ 20A, 10V | 2.2V @ 250µA | 8-DFN | 8-DFN (5x6) | 18A (Ta), 80A (Tc) | 4.5V, 10V | 72 nC @ 10 V | ±20V | 4463 pF @ 15 V | 2.1W (Ta), 83W (Tc) | ||||
 | Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 155°C (TJ) | N-Channel | 30 V | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 10mOhm @ 13A, 10V | 2.1V @ 250µA | 8-PowerVDFN | 8-DFN-EP (3x3) | 13.5A (Ta), 36A (Tc) | 4.5V, 10V | 24 nC @ 10 V | ±12V | 1400 pF @ 15 V | 3.1W (Ta), 23W (Tc) | ||||
| Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 9.5mOhm @ 13.5A, 10V | 2.5V @ 250µA | 8-PowerVDFN | 8-DFN-EP (3x3) | 13.5A (Ta), 20A (Tc) | 4.5V, 10V | 24 nC @ 10 V | ±20V | 810 pF @ 15 V | 3.1W (Ta), 23W (Tc) | - | ||
| Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 2.4mOhm @ 20A, 10V | 2V @ 250µA | 8-PowerSMD, Flat Leads | 8-DFN (5x6) | 24A (Ta), 85A (Tc) | 4.5V, 10V | 51 nC @ 10 V | ±12V | 6780 pF @ 15 V | 2.5W (Ta), 83W (Tc) | - | ||
 | Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 9mOhm @ 15A, 10V | 2.5V @ 250µA | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 15A (Ta) | 4.5V, 10V | 32 nC @ 10 V | ±20V | 1950 pF @ 15 V | 3.1W (Ta) | - | ||
 | Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 4.2mOhm @ 20A, 10V | 2.5V @ 250µA | 3-PowerSMD, Flat Leads | UltraSO-8™ | 16A (Ta), 65A (Tc) | 4.5V, 10V | 95 nC @ 10 V | ±12V | 5120 pF @ 15 V | 2.1W (Ta), 100W (Tc) | - | ||
 | Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 4.4mOhm @ 20A, 10V | 2.2V @ 250µA | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK) | 85A (Tc) | 4.5V, 10V | 74 nC @ 10 V | ±20V | 4512 pF @ 15 V | 2.5W (Ta), 100W (Tc) | - | ||
| Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 4.5mOhm @ 20A, 10V | 2V @ 250µA | 8-PowerVDFN | 8-DFN-EP (3x3) | 20A (Ta), 40A (Tc) | 4.5V, 10V | 29 nC @ 10 V | ±12V | 4100 pF @ 15 V | 3.1W (Ta), 36W (Tc) | - | ||
 | Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 3.5mOhm @ 20A, 10V | 2.1V @ 250µA | 8-PowerWDFN | 8-DFN-EP (3.3x3.3) | 31A (Ta), 50A (Tc) | 4.5V, 10V | 34 nC @ 10 V | ±12V | 4600 pF @ 15 V | 6.2W (Ta), 83W (Tc) | - | ||
| Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 4.3mOhm @ 20A, 10V | 2.2V @ 250µA | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 20A (Tc) | 4.5V, 10V | 72 nC @ 10 V | ±20V | 4463 pF @ 15 V | 3.1W (Ta) | - | ||
| Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 4.5mOhm @ 20A, 10V | 2.1V @ 250µA | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 20A (Ta) | 4.5V, 10V | 73 nC @ 10 V | ±12V | 3800 pF @ 15 V | 1.7W (Ta) | - | ||
| Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 17.5mOhm @ 10.5A, 10V | 2V @ 250µA | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 7.7A (Ta) | 4.5V, 10V | 16 nC @ 10 V | ±20V | 900 pF @ 15 V | 1.7W (Ta) | - | ||
| Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 14mOhm @ 11.6A, 10V | 2.5V @ 250µA | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 8.5A (Ta) | 4.5V, 10V | 20 nC @ 10 V | ±20V | 1100 pF @ 15 V | 1.7W (Ta) | - | ||
| Contact us | Contact us | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 30 V | - | MOSFET (Metal Oxide) | SRFET™ | Schottky Diode (Body) | 11mOhm @ 13A, 10V | 2V @ 250µA | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 13A (Ta) | 4.5V, 10V | 30 nC @ 10 V | ±20V | 1600 pF @ 15 V | 3.1W (Ta) | - |
单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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