POWER MOS 8™ Series, Single FETs, MOSFETs

Results:
116
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining116
Applied Filters:
POWER MOS 8™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
APT9F100B
MOSFET N-CH 1000V 9A TO247
1+
$8.8732
5+
$8.3803
10+
$7.8873
Quantity
384 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247 [B]
MOSFET (Metal Oxide)
POWER MOS 8™
-
9A (Tc)
5V @ 1mA
1000 V
10V
1.6Ohm @ 5A, 10V
80 nC @ 10 V
±30V
2606 pF @ 25 V
337W (Tc)
-
APT30F50B
MOSFET N-CH 500V 30A TO247
1+
$10.1408
5+
$9.5775
10+
$9.0141
Quantity
100 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247 [B]
MOSFET (Metal Oxide)
POWER MOS 8™
-
30A (Tc)
5V @ 1mA
500 V
10V
190mOhm @ 14A, 10V
115 nC @ 10 V
±30V
4525 pF @ 25 V
415W (Tc)
-
APT9M100B
MOSFET N-CH 1000V 9A TO247
1+
$10.9825
5+
$10.3724
10+
$9.7623
Quantity
18 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247 [B]
MOSFET (Metal Oxide)
POWER MOS 8™
-
9A (Tc)
5V @ 1mA
1000 V
10V
1.4Ohm @ 5A, 10V
80 nC @ 10 V
±30V
2605 pF @ 25 V
335W (Tc)
-
APT58M50JCU2
MOSFET N-CH 500V 58A SOT227
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
SOT-227
MOSFET (Metal Oxide)
POWER MOS 8™
-
58A (Tc)
5V @ 2.5mA
500 V
10V
65mOhm @ 42A, 10V
340 nC @ 10 V
±30V
10800 pF @ 25 V
543W (Tc)
-
APT23F60S
MOSFET N-CH 600V 24A D3PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
D3PAK
MOSFET (Metal Oxide)
POWER MOS 8™
-
24A (Tc)
5V @ 1mA
600 V
10V
290mOhm @ 11A, 10V
110 nC @ 10 V
±30V
4415 pF @ 25 V
415W (Tc)
-
APT9F100S
MOSFET N-CH 1000V 9A D3PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
D3PAK
MOSFET (Metal Oxide)
POWER MOS 8™
-
9A (Tc)
5V @ 1mA
1000 V
10V
1.6Ohm @ 5A, 10V
80 nC @ 10 V
±30V
2606 pF @ 25 V
337W (Tc)
-
APT20F50S
MOSFET N-CH 500V 20A D3PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
D3PAK
MOSFET (Metal Oxide)
POWER MOS 8™
-
20A (Tc)
5V @ 500µA
500 V
10V
300mOhm @ 10A, 10V
75 nC @ 10 V
±30V
2950 pF @ 25 V
290W (Tc)
-
APT28F60S
MOSFET N-CH 600V 30A D3PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
D3PAK
MOSFET (Metal Oxide)
POWER MOS 8™
-
30A (Tc)
5V @ 1mA
600 V
10V
220mOhm @ 14A, 10V
140 nC @ 10 V
±30V
5575 pF @ 25 V
520W (Tc)
-
APT11F80S
MOSFET N-CH 800V 12A D3PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
D3PAK
MOSFET (Metal Oxide)
POWER MOS 8™
-
12A (Tc)
5V @ 1mA
800 V
10V
900mOhm @ 6A, 10V
80 nC @ 10 V
±30V
2471 pF @ 25 V
337W (Tc)
-
APT18M80S
MOSFET N-CH 800V 19A D3PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
D3PAK
MOSFET (Metal Oxide)
POWER MOS 8™
-
19A (Tc)
5V @ 1mA
800 V
10V
530mOhm @ 9A, 10V
120 nC @ 10 V
±30V
3760 pF @ 25 V
500W (Tc)
-
APT15F60S
MOSFET N-CH 600V 16A D3PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
D3PAK
MOSFET (Metal Oxide)
POWER MOS 8™
-
16A (Tc)
5V @ 500µA
600 V
10V
430mOhm @ 7A, 10V
72 nC @ 10 V
±30V
2882 pF @ 25 V
290W (Tc)
-
APT58MJ50J
MOSFET N-CH 500V 58A ISOTOP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
ISOTOP®
MOSFET (Metal Oxide)
POWER MOS 8™
-
58A (Tc)
5V @ 2.5mA
500 V
10V
65mOhm @ 42A, 10V
340 nC @ 10 V
±30V
13500 pF @ 25 V
540W (Tc)
-
APT18F60S
MOSFET N-CH 600V 19A D3PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
D3PAK
MOSFET (Metal Oxide)
POWER MOS 8™
-
19A (Tc)
5V @ 1mA
600 V
10V
370mOhm @ 9A, 10V
90 nC @ 10 V
±30V
3550 pF @ 25 V
335W (Tc)
-
APT24F50S
MOSFET N-CH 500V 24A D3PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
D3PAK
MOSFET (Metal Oxide)
POWER MOS 8™
-
24A (Tc)
5V @ 1mA
500 V
10V
240mOhm @ 11A, 10V
90 nC @ 10 V
±30V
3630 pF @ 25 V
335W (Tc)
-
APT58M50JCU3
MOSFET N-CH 500V 58A SOT227
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
SOT-227
MOSFET (Metal Oxide)
POWER MOS 8™
-
58A (Tc)
5V @ 2.5mA
500 V
10V
65mOhm @ 42A, 10V
340 nC @ 10 V
±30V
10800 pF @ 25 V
543W (Tc)
-
APTM100DA18CT1G
MOSFET N-CH 1000V 40A SP1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
N-Channel
SP1
-
SP1
MOSFET (Metal Oxide)
POWER MOS 8™
-
40A (Tc)
5V @ 2.5mA
1000 V
10V
216mOhm @ 33A, 10V
570 nC @ 10 V
±30V
14800 pF @ 25 V
657W (Tc)
-
APT5F100K
MOSFET N-CH 1000V 5A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
TO-220 [K]
MOSFET (Metal Oxide)
POWER MOS 8™
-
5A (Tc)
5V @ 500µA
1000 V
10V
2.8Ohm @ 3A, 10V
43 nC @ 10 V
±30V
1409 pF @ 25 V
225W (Tc)
-
APT8M80K
MOSFET N-CH 800V 8A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
TO-220 [K]
MOSFET (Metal Oxide)
POWER MOS 8™
-
8A (Tc)
5V @ 500µA
800 V
10V
1.35Ohm @ 4A, 10V
43 nC @ 10 V
±30V
1335 pF @ 25 V
225W (Tc)
-
APT11F80B
MOSFET N-CH 800V 12A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247 [B]
MOSFET (Metal Oxide)
POWER MOS 8™
-
12A (Tc)
5V @ 1mA
800 V
10V
900mOhm @ 6A, 10V
80 nC @ 10 V
±30V
2471 pF @ 25 V
337W (Tc)
-
APT7M120S
MOSFET N-CH 1200V 8A D3PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
D3PAK
MOSFET (Metal Oxide)
POWER MOS 8™
-
8A (Tc)
5V @ 1mA
1200 V
10V
2.1Ohm @ 3A, 10V
80 nC @ 10 V
±30V
2565 pF @ 25 V
335W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.