MDmesh™ DK5 Series, Single FETs, MOSFETs

Results:
6
Manufacturer
Series
Supplier Device Package
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Drain to Source Voltage (Vdss)
Package / Case
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Vgs(th) (Max) @ Id
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining6
Applied Filters:
MDmesh™ DK5
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STW40N95DK5
MOSFET N-CHANNEL 950V 38A TO247
1+
$11.4085
5+
$10.7746
10+
$10.1408
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C
N-Channel
TO-247-3
-
TO-247
MOSFET (Metal Oxide)
-
38A (Tc)
MDmesh™ DK5
950 V
10V
130mOhm @ 19A, 10V
5V @ 100µA
100 nC @ 10 V
±30V
3480 pF @ 100 V
450W (Tc)
-
STWA40N95DK5
MOSFET N-CHANNEL 950V 38A TO247
1+
$20.2817
5+
$19.1549
10+
$18.0282
Quantity
26 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C
N-Channel
TO-247-3
-
TO-247 Long Leads
MOSFET (Metal Oxide)
-
38A (Tc)
MDmesh™ DK5
950 V
10V
130mOhm @ 19A, 10V
5V @ 100µA
100 nC @ 10 V
±30V
3480 pF @ 100 V
450W (Tc)
-
STE60N105DK5
MOSFET N-CH 1050V 46A ISOTOP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
ISOTOP
-
ISOTOP
MOSFET (Metal Oxide)
-
46A (Tc)
MDmesh™ DK5
1050 V
10V
120mOhm @ 23A, 10V
5V @ 100µA
204 nC @ 10 V
±30V
6675 pF @ 100 V
680W (Tc)
-
STWA20N95DK5
MOSFET N-CH 950V 18A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247 Long Leads
MOSFET (Metal Oxide)
-
18A (Tc)
MDmesh™ DK5
950 V
10V
330mOhm @ 9A, 10V
5V @ 100µA
50.7 nC @ 10 V
±30V
1600 pF @ 100 V
250W (Tc)
-
STW20N95DK5
MOSFET N-CH 950V 18A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247-3
MOSFET (Metal Oxide)
-
18A (Tc)
MDmesh™ DK5
950 V
10V
330mOhm @ 9A, 10V
5V @ 100µA
50.7 nC @ 10 V
±30V
1600 pF @ 100 V
250W (Tc)
-
STF16N90K5
MOSFET N-CH 900V 15A TO220FP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
-
TO-220FP
MOSFET (Metal Oxide)
-
15A (Tc)
MDmesh™ DK5
900 V
10V
330mOhm @ 7.5A, 10V
5V @ 100µA
29.7 nC @ 10 V
±30V
1027 pF @ 100 V
30W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.