π-MOSVI Series, Single FETs, MOSFETs

Results:
16
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Type
Drain to Source Voltage (Vdss)
Vgs (Max)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Grade
Mounting Type
Qualification
Technology
Results remaining16
Applied Filters:
π-MOSVI
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)Package / CaseSupplier Device PackageGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On, Min Rds On)Vgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)QualificationSeries
SSM3K16FU,LF
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
62,965 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
20 V
SC-70, SOT-323
USM
-
MOSFET (Metal Oxide)
-
100mA (Ta)
3Ohm @ 10mA, 4V
1.1V @ 100µA
-
1.5V, 4V
±10V
9.3 pF @ 3 V
150mW (Ta)
-
π-MOSVI
SSM3K09FU,LF
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
30,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C
N-Channel
30 V
SC-70, SOT-323
USM
-
MOSFET (Metal Oxide)
-
400mA (Ta)
700mOhm @ 200MA, 10V
1.8V @ 100µA
-
3.3V, 10V
±20V
20 pF @ 5 V
150mW (Ta)
-
π-MOSVI
SSM5N15FU,LF
1+
$0.1597
5+
$0.1508
10+
$0.1420
Quantity
30,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
30 V
5-TSSOP, SC-70-5, SOT-353
5-SSOP
-
MOSFET (Metal Oxide)
-
100mA (Ta)
4Ohm @ 10mA, 4V
-
-
2.5V, 4V
±20V
7.8 pF @ 3 V
200mW (Ta)
-
π-MOSVI
SSM3J15FU,LF
1+
$0.1268
5+
$0.1197
10+
$0.1127
Quantity
4,999 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
SC-70, SOT-323
USM
-
MOSFET (Metal Oxide)
-
100mA (Ta)
12Ohm @ 10mA, 4V
1.7V @ 100µA
-
2.5V, 4V
±20V
9.1 pF @ 3 V
150mW (Ta)
-
π-MOSVI
SSM3J15FV,L3F
1+
$0.1014
5+
$0.0958
10+
$0.0901
Quantity
2,470 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
SOT-723
VESM
-
MOSFET (Metal Oxide)
-
100mA (Ta)
12Ohm @ 10mA, 4V
1.7V @ 100µA
-
2.5V, 4V
±20V
9.1 pF @ 3 V
150mW (Ta)
-
π-MOSVI
SSM3K01T(TE85L,F)
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
30 V
TO-236-3, SC-59, SOT-23-3
TSM
-
MOSFET (Metal Oxide)
-
3.2A (Ta)
120mOhm @ 1.6A, 4V
-
-
2.5V, 4V
±10V
152 pF @ 10 V
1.25W (Ta)
-
π-MOSVI
SSM3J16CT(TPL3)
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
P-Channel
20 V
SC-101, SOT-883
CST3
-
MOSFET (Metal Oxide)
-
100mA (Ta)
8Ohm @ 10mA, 4V
1.1V @ 100µA
-
1.5V, 4V
±10V
11 pF @ 3 V
100mW (Ta)
-
π-MOSVI
SSM5N16FUTE85LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
20 V
5-TSSOP, SC-70-5, SOT-353
5-SSOP
-
MOSFET (Metal Oxide)
-
100mA (Ta)
3Ohm @ 10mA, 4V
-
-
1.5V, 4V
±10V
9.3 pF @ 3 V
200mW (Ta)
-
π-MOSVI
SSM3J15CT(TPL3)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
P-Channel
30 V
SC-101, SOT-883
CST3
-
MOSFET (Metal Oxide)
-
100mA (Ta)
12Ohm @ 10mA, 4V
-
-
2.5V, 4V
±20V
9.1 pF @ 3 V
100mW (Ta)
-
π-MOSVI
SSM3K106TU(TE85L)
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
20 V
3-SMD, Flat Leads
UFM
-
MOSFET (Metal Oxide)
-
1.2A (Ta)
310mOhm @ 600mA, 10V
2.3V @ 100µA
-
4V, 10V
±20V
36 pF @ 10 V
500mW (Ta)
-
π-MOSVI
SSM3K16CT(TPL3)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
20 V
SC-101, SOT-883
CST3
-
MOSFET (Metal Oxide)
-
100mA (Ta)
3Ohm @ 10mA, 4V
1.1V @ 100µA
-
1.5V, 4V
±10V
9.3 pF @ 3 V
100mW (Ta)
-
π-MOSVI
SSM3K15FS,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
30 V
SC-75, SOT-416
SSM
-
MOSFET (Metal Oxide)
-
100mA (Ta)
4Ohm @ 10mA, 4V
1.5V @ 100µA
-
2.5V, 4V
±20V
7.8 pF @ 3 V
200mW (Ta)
-
π-MOSVI
SSM3K15CT(TPL3)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
30 V
SC-101, SOT-883
CST3
-
MOSFET (Metal Oxide)
-
100mA (Ta)
4Ohm @ 10mA, 4V
1.5V @ 100µA
-
2.5V, 4V
±20V
7.8 pF @ 3 V
100mW (Ta)
-
π-MOSVI
SSM3K35MFV(TPL3)
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
20 V
SOT-723
VESM
-
MOSFET (Metal Oxide)
-
180mA (Ta)
3Ohm @ 50mA, 4V
1V @ 1mA
-
1.2V, 4V
±10V
9.5 pF @ 3 V
150mW (Ta)
-
π-MOSVI
SSM3J35CT,L3F
MOSFET P-CHANNEL 20V 100MA CST3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C
P-Channel
20 V
SC-101, SOT-883
CST3
-
MOSFET (Metal Oxide)
-
100mA (Ta)
8Ohm @ 50mA, 4V
1V @ 1mA
-
1.2V, 4V
±10V
12.2 pF @ 3 V
100mW (Ta)
-
π-MOSVI
SSM5N15FE(TE85L,F)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
30 V
SOT-553
ESV
-
MOSFET (Metal Oxide)
-
100mA (Ta)
4Ohm @ 10mA, 4V
1.5V @ 100µA
-
2.5V, 4V
±20V
7.8 pF @ 3 V
150mW (Ta)
-
π-MOSVI

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.