FDmesh™ Series, Single FETs, MOSFETs

Results:
15
Manufacturer
Series
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Operating Temperature
Mounting Type
Drain to Source Voltage (Vdss)
Vgs (Max)
FET Feature
FET Type
Grade
Vgs(th) (Max) @ Id
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining15
Applied Filters:
FDmesh™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseSupplier Device PackageOperating TemperatureGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STB20NM60D
MOSFET N-CH 600V 20A D2PAK
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
14,968 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
20A (Tc)
5V @ 250µA
FDmesh™
600 V
10V
290mOhm @ 10A, 10V
52 nC @ 10 V
±30V
1300 pF @ 25 V
192W (Tc)
-
STP20NM60FD
MOSFET N-CH 600V 20A TO220AB
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
12,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
-65°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
20A (Tc)
5V @ 250µA
FDmesh™
600 V
10V
290mOhm @ 10A, 10V
37 nC @ 10 V
±30V
1300 pF @ 25 V
192W (Tc)
-
STW20NM50FD
MOSFET N-CH 500V 20A TO247-3
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
3,086 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247-3
150°C (TJ)
-
MOSFET (Metal Oxide)
-
20A (Tc)
5V @ 250µA
FDmesh™
500 V
10V
250mOhm @ 10A, 10V
53 nC @ 10 V
±30V
1380 pF @ 25 V
214W (Tc)
-
STW43NM60ND
MOSFET N-CH 600V 35A TO247-3
1+
$2.7887
5+
$2.6338
10+
$2.4789
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247-3
150°C (TJ)
-
MOSFET (Metal Oxide)
-
35A (Tc)
5V @ 250µA
FDmesh™
600 V
10V
88mOhm @ 17.5A, 10V
145 nC @ 10 V
±25V
4300 pF @ 50 V
255W (Tc)
-
STW20NM60FD
MOSFET N-CH 600V 20A TO247-3
1+
$9.1268
5+
$8.6197
10+
$8.1127
Quantity
300 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247-3
-65°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
20A (Tc)
5V @ 250µA
FDmesh™
600 V
10V
290mOhm @ 10A, 10V
37 nC @ 10 V
±30V
1300 pF @ 25 V
214W (Tc)
-
STW45NM50FD
MOSFET N-CH 500V 45A TO247-3
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247-3
-65°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
45A (Tc)
5V @ 250µA
FDmesh™
500 V
10V
100mOhm @ 22.5A, 10V
120 nC @ 10 V
±30V
3600 pF @ 25 V
417W (Tc)
-
STF20NM60D
MOSFET N-CH 600V 20A TO220FP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220FP
-65°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
20A (Tc)
5V @ 250µA
FDmesh™
600 V
10V
290mOhm @ 10A, 10V
37 nC @ 10 V
±30V
1300 pF @ 25 V
45W (Tc)
-
STB20NM50FDT4
MOSFET N-CH 500V 20A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
150°C (TJ)
-
MOSFET (Metal Oxide)
-
20A (Tc)
5V @ 250µA
FDmesh™
500 V
10V
250mOhm @ 10A, 10V
53 nC @ 10 V
±30V
1380 pF @ 25 V
192W (Tc)
-
STP20NM50FD
MOSFET N-CH 500V 20A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
-65°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
20A (Tc)
5V @ 250µA
FDmesh™
500 V
10V
250mOhm @ 10A, 10V
53 nC @ 10 V
±30V
1380 pF @ 25 V
192W (Tc)
-
STB11NM60FDT4
MOSFET N-CH 600V 11A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-
-
MOSFET (Metal Oxide)
-
11A (Tc)
5V @ 250µA
FDmesh™
600 V
10V
450mOhm @ 5.5A, 10V
40 nC @ 10 V
±30V
900 pF @ 25 V
160W (Tc)
-
STP12NM50FD
MOSFET N-CH 500V 12A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
-65°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
12A (Tc)
5V @ 250µA
FDmesh™
500 V
10V
400mOhm @ 6A, 10V
12 nC @ 10 V
±30V
1000 pF @ 25 V
160W (Tc)
-
STW14NM50FD
MOSFET N-CH 500V 14A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247-3
-65°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
14A (Tc)
5V @ 250µA
FDmesh™
500 V
10V
400mOhm @ 6A, 10V
12 nC @ 10 V
±30V
1000 pF @ 25 V
160W (Tc)
-
STP11NM60FD
MOSFET N-CH 600V 11A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
-
-
MOSFET (Metal Oxide)
-
11A (Tc)
5V @ 250µA
FDmesh™
600 V
10V
450mOhm @ 5.5A, 10V
40 nC @ 10 V
±30V
900 pF @ 25 V
160W (Tc)
-
STB12NM50FDT4
MOSFET N-CH 500V 12A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
12A (Tc)
5V @ 250µA
FDmesh™
500 V
10V
400mOhm @ 6A, 10V
12 nC @ 10 V
±30V
1000 pF @ 25 V
160W (Tc)
-
STP11NM60FDFP
MOSFET N-CH 600V 11A TO220FP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220FP
-
-
MOSFET (Metal Oxide)
-
11A (Tc)
5V @ 250µA
FDmesh™
600 V
10V
450mOhm @ 5.5A, 10V
40 nC @ 10 V
±30V
900 pF @ 25 V
35W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.