FRFET®, SupreMOS® Series, Single FETs, MOSFETs

Results:
3
Manufacturer
Series
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Operating Temperature
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Rds On (Max) @ Id, Vgs
Supplier Device Package
Power Dissipation (Max)
Package / Case
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining3
Applied Filters:
FRFET®, SupreMOS®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FCA36N60NF
MOSFET N-CH 600V 34.9A TO3PN
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-3P-3, SC-65-3
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TO-3PN
MOSFET (Metal Oxide)
-
5V @ 250µA
FRFET®, SupreMOS®
600 V
34.9A (Tc)
10V
95mOhm @ 18A, 10V
112 nC @ 10 V
±30V
4245 pF @ 100 V
312W (Tc)
-
MMIX1T600N04T2
MOSFET N-CH 40V 600A 24SMPD
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
24-PowerSMD, 21 Leads
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24-SMPD
MOSFET (Metal Oxide)
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3.5V @ 250µA
FRFET®, SupreMOS®
40 V
600A (Tc)
10V
1.3mOhm @ 100A, 10V
590 nC @ 10 V
±20V
40000 pF @ 25 V
830W (Tc)
-
MMIX1T550N055T2
MOSFET N-CH 55V 550A 24SMPD
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
24-PowerSMD, 21 Leads
-
24-SMPD
MOSFET (Metal Oxide)
-
3.8V @ 250µA
FRFET®, SupreMOS®
55 V
550A (Tc)
10V
1.3mOhm @ 100A, 10V
595 nC @ 10 V
±20V
40000 pF @ 25 V
830W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.