TEMPFET® Series, Single FETs, MOSFETs

Results:
28
Manufacturer
Series
Supplier Device Package
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Mounting Type
FET Type
Grade
Qualification
Technology
Results remaining28
Applied Filters:
TEMPFET®
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeGradePackage / CaseSupplier Device PackageTechnologyCurrent - Continuous Drain (Id) @ 25°CSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Qualification
BTS282ZE3230AKSA2
MOSFET N-CH 49V 80A TO220-7
1+
$9.8873
5+
$9.3380
10+
$8.7887
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
N-Channel
-
TO-220-7
PG-TO220-7-12
MOSFET (Metal Oxide)
80A (Tc)
TEMPFET®
49 V
4.5V, 10V
6.5mOhm @ 36A, 10V
2V @ 240µA
232 nC @ 10 V
±20V
4800 pF @ 25 V
Temperature Sensing Diode
300W (Tc)
-
BTS282ZE3180AATMA2
MOSFET N-CH 49V 80A TO263-7
1+
$50.7042
5+
$47.8873
10+
$45.0704
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 175°C (TJ)
N-Channel
-
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
PG-TO263-7-1
MOSFET (Metal Oxide)
80A (Tc)
TEMPFET®
49 V
4.5V, 10V
6.5mOhm @ 36A, 10V
2V @ 240µA
232 nC @ 10 V
±20V
4800 pF @ 25 V
Temperature Sensing Diode
300W (Tc)
-
BTS247Z E3062A
MOSFET N-CH 55V 33A TO263-5
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
2,627 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 175°C (TJ)
N-Channel
-
TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
PG-TO263-5-2
MOSFET (Metal Oxide)
33A (Tc)
TEMPFET®
55 V
4.5V, 10V
18mOhm @ 12A, 10V
2V @ 90µA
90 nC @ 10 V
±20V
1730 pF @ 25 V
Temperature Sensing Diode
120W (Tc)
-
BTS247ZE3062AATMA2
MOSFET N-CH 55V 33A TO263-5
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
716 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 175°C (TJ)
N-Channel
-
TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
PG-TO263-5-2
MOSFET (Metal Oxide)
33A (Tc)
TEMPFET®
55 V
4.5V, 10V
18mOhm @ 12A, 10V
2V @ 90µA
90 nC @ 10 V
±20V
1730 pF @ 25 V
Temperature Sensing Diode
120W (Tc)
-
BTS121AE3045ANTMA1
MOSFET N CH 100V 22A TO-220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO220-3-5
MOSFET (Metal Oxide)
22A (Tc)
TEMPFET®
100 V
4.5V
100mOhm @ 9.5A, 4.5V
2.5V @ 1mA
-
±10V
1500 pF @ 25 V
-
95W (Tc)
-
BTS247ZE3062ANTMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 175°C (TJ)
N-Channel
-
TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
PG-TO263-5-2
MOSFET (Metal Oxide)
33A (Tc)
TEMPFET®
55 V
4.5V, 10V
18mOhm @ 12A, 10V
2V @ 90µA
90 nC @ 10 V
±20V
1730 pF @ 25 V
-
120W (Tc)
-
BTS114AE3045A
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO220-3-5
MOSFET (Metal Oxide)
17A (Tc)
TEMPFET®
50 V
10V
100mOhm @ 9A, 10V
3.5V @ 1mA
-
±20V
600 pF @ 25 V
-
50W
-
BTS247ZE3043AKSA1
MOSFET N-CH 55V 33A TO220-5-43
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
N-Channel
-
TO-220-5
P-TO220-5-43
MOSFET (Metal Oxide)
33A (Tc)
TEMPFET®
55 V
4.5V, 10V
18mOhm @ 12A, 10V
2V @ 90µA
90 nC @ 10 V
±20V
1730 pF @ 25 V
Temperature Sensing Diode
120W (Tc)
-
BTS282Z E3230
MOSFET N-CH 49V 80A TO220-7
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
N-Channel
-
TO-220-7
P-TO220-7-230
MOSFET (Metal Oxide)
80A (Tc)
TEMPFET®
49 V
4.5V, 10V
6.5mOhm @ 36A, 10V
2V @ 240µA
232 nC @ 10 V
±20V
4800 pF @ 25 V
Temperature Sensing Diode
300W (Tc)
-
BTS132E3129NKSA1
BTS132 - N-CHANNEL TEMPFET
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3
PG-TO220-3-1
MOSFET (Metal Oxide)
24A (Tc)
TEMPFET®
60 V
4.5V
65mOhm @ 12A, 4.5V
2.5V @ 1mA
-
±20V
1400 pF @ 25 V
-
75W
-
BTS110NKSA1
MOSFET N-CH 100V 10A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3
TO-220AB
MOSFET (Metal Oxide)
10A (Tc)
TEMPFET®
100 V
-
200mOhm @ 5A, 10V
3.5V @ 1mA
-
-
600 pF @ 25 V
-
-
-
BTS110E3045ANTMA1
MOSFET N-CH 100V 10A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-220AB
MOSFET (Metal Oxide)
10A (Tc)
TEMPFET®
100 V
-
200mOhm @ 5A, 10V
3.5V @ 1mA
-
-
600 pF @ 25 V
-
-
-
BTS113ANKSA1
MOSFET N-CH 60V 11.5A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3
TO-220AB
MOSFET (Metal Oxide)
11.5A (Tc)
TEMPFET®
60 V
4.5V
170mOhm @ 5.8A, 4.5V
2.5V @ 1mA
-
±10V
560 pF @ 25 V
-
40W (Tc)
-
BTS244ZNKSA1
MOSFET N-CH 55V 35A TO220-5-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
N-Channel
-
TO-220-5 Formed Leads
PG-TO220-5-3
MOSFET (Metal Oxide)
35A (Tc)
TEMPFET®
55 V
4.5V, 10V
13mOhm @ 19A, 10V
2V @ 130µA
130 nC @ 10 V
±20V
2660 pF @ 25 V
Temperature Sensing Diode
170W (Tc)
-
BTS113AE3064NKSA1
MOSFET N-CH 60V 11.5A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3
TO-220AB
MOSFET (Metal Oxide)
11.5A (Tc)
TEMPFET®
60 V
4.5V
170mOhm @ 5.8A, 4.5V
2.5V @ 1mA
-
±10V
560 pF @ 25 V
-
40W (Tc)
-
BTS244Z E3043
MOSFET N-CH 55V 35A TO220-5-43
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
N-Channel
-
TO-220-5
P-TO220-5-43
MOSFET (Metal Oxide)
35A (Tc)
TEMPFET®
55 V
4.5V, 10V
13mOhm @ 19A, 10V
2V @ 130µA
130 nC @ 10 V
±20V
2660 pF @ 25 V
Temperature Sensing Diode
170W (Tc)
-
BTS132E3045ANTMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO220-3-5
MOSFET (Metal Oxide)
24A (Tc)
TEMPFET®
60 V
4.5V
65mOhm @ 12A, 4.5V
2.5V @ 1mA
-
±20V
1400 pF @ 25 V
-
75W
-
BTS131E3045ANTMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
MOSFET (Metal Oxide)
25A (Tc)
TEMPFET®
50 V
4.5V
60mOhm @ 12A, 4.5V
2.5V @ 1mA
-
±10V
1400 pF @ 25 V
-
75W
-
BTS113AE3045ANTMA1
MOSFET N-CH 60V 11.5A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-220AB
MOSFET (Metal Oxide)
11.5A (Tc)
TEMPFET®
60 V
4.5V
170mOhm @ 5.8A, 4.5V
2.5V @ 1mA
-
±10V
560 pF @ 25 V
-
40W (Tc)
-
BTS282ZAKSA1
MOSFET N-CH 49V 80A TO220-7
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
N-Channel
-
TO-220-7
P-TO220-7-3
MOSFET (Metal Oxide)
80A (Tc)
TEMPFET®
49 V
4.5V, 10V
6.5mOhm @ 36A, 10V
2V @ 240µA
232 nC @ 10 V
±20V
4800 pF @ 25 V
Temperature Sensing Diode
300W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.