CoolMOS™ G7 Series, Single FETs, MOSFETs

Results:
11
Manufacturer
Series
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Operating Temperature
Supplier Device Package
Package / Case
FET Feature
FET Type
Grade
Mounting Type
Drain to Source Voltage (Vdss)
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining11
Applied Filters:
CoolMOS™ G7
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeGradeTechnologyFET FeatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackagePackage / CaseQualification
IPT60R050G7XTMA1
MOSFET N-CH 600V 44A 8HSOF
1+
$23.3239
5+
$22.0282
10+
$20.7324
Quantity
2,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
CoolMOS™ G7
600 V
44A (Tc)
10V
50mOhm @ 15.9A, 10V
4V @ 800µA
68 nC @ 10 V
±20V
2670 pF @ 400 V
245W (Tc)
PG-HSOF-8-2
8-PowerSFN
-
IPDD60R150G7XTMA1
MOSFET N-CH 600V 16A HDSOP-10
1+
$4.5634
5+
$4.3099
10+
$4.0563
Quantity
1,700 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
CoolMOS™ G7
600 V
16A (Tc)
10V
150mOhm @ 5.3A, 10V
4V @ 260µA
23 nC @ 10 V
±20V
902 pF @ 400 V
95W (Tc)
PG-HDSOP-10-1
10-PowerSOP Module
-
IPT60R150G7XTMA1
MOSFET N-CH 600V 17A 8HSOF
1+
$5.1211
5+
$4.8366
10+
$4.5521
Quantity
259 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
CoolMOS™ G7
600 V
17A (Tc)
10V
150mOhm @ 5.3A, 10V
4V @ 260µA
23 nC @ 10 V
±20V
902 pF @ 400 V
106W (Tc)
PG-HSOF-8-2
8-PowerSFN
-
IPT60R028G7XTMA1
MOSFET N-CH 600V 75A 8HSOF
1+
$19.0141
5+
$17.9577
10+
$16.9014
Quantity
18 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
CoolMOS™ G7
600 V
75A (Tc)
10V
28mOhm @ 28.8A, 10V
4V @ 1.44mA
123 nC @ 10 V
±20V
4820 pF @ 400 V
391W (Tc)
PG-HSOF-8-2
8-PowerSFN
-
IPDD60R125G7XTMA1
MOSFET N-CH 600V 20A HDSOP-10
1+
$6.8451
5+
$6.4648
10+
$6.0845
Quantity
10 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
CoolMOS™ G7
600 V
20A (Tc)
10V
125mOhm @ 6.4A, 10V
4V @ 320µA
27 nC @ 10 V
±20V
1080 pF @ 400 V
120W (Tc)
PG-HDSOP-10-1
10-PowerSOP Module
-
IPT60R080G7XTMA1
MOSFET N-CH 600V 29A 8HSOF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
CoolMOS™ G7
600 V
29A (Tc)
10V
80mOhm @ 9.7A, 10V
4V @ 490µA
42 nC @ 10 V
±20V
1640 pF @ 400 V
167W (Tc)
PG-HSOF-8-2
8-PowerSFN
-
IPT60R102G7XTMA1
MOSFET N-CH 600V 23A 8HSOF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
CoolMOS™ G7
600 V
23A (Tc)
10V
102mOhm @ 7.8A, 10V
4V @ 390µA
34 nC @ 10 V
±20V
1320 pF @ 400 V
141W (Tc)
PG-HSOF-8-2
8-PowerSFN
-
IPDD60R050G7XTMA1
MOSFET N-CH 600V 47A HDSOP-10
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
CoolMOS™ G7
600 V
47A (Tc)
10V
50mOhm @ 15.9A, 10V
4V @ 800µA
68 nC @ 10 V
±20V
2670 pF @ 400 V
278W (Tc)
PG-HDSOP-10-1
10-PowerSOP Module
-
IPDD60R190G7XTMA1
MOSFET N-CH 600V 13A HDSOP-10
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
CoolMOS™ G7
600 V
13A (Tc)
10V
190mOhm @ 4.2A, 10V
4V @ 210µA
18 nC @ 10 V
±20V
718 pF @ 400 V
76W (Tc)
PG-HDSOP-10-1
10-PowerSOP Module
-
IPT60R125G7XTMA1
MOSFET N-CH 600V 20A 8HSOF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
CoolMOS™ G7
600 V
20A (Tc)
10V
125mOhm @ 6.4A, 10V
4V @ 320µA
27 nC @ 10 V
±20V
1080 pF @ 400 V
120W (Tc)
PG-HSOF-8-2
8-PowerSFN
-
IPDD60R080G7XTMA1
MOSFET N-CH 600V 29A HDSOP-10
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
CoolMOS™ G7
600 V
29A (Tc)
10V
80mOhm @ 9.7A, 10V
4V @ 490µA
42 nC @ 10 V
±20V
1640 pF @ 400 V
174W (Tc)
PG-HDSOP-10-1
10-PowerSOP Module
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.