NC1M Series, Single FETs, MOSFETs

Results:
6
Manufacturer
Series
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Operating Temperature
Mounting Type
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Grade
Drain to Source Voltage (Vdss)
Qualification
Technology
Results remaining6
Applied Filters:
NC1M
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)GradeFET FeatureGate Charge (Qg) (Max) @ VgsTechnologyCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Vgs (Max)Supplier Device PackageQualificationSeriesPackage / CaseInput Capacitance (Ciss) (Max) @ VdsRds On (Max) @ Id, VgsVgs(th) (Max) @ IdPower Dissipation (Max)
NC1M120C75RRNG
SiC MOSFET N 1200V 75mohm 46A 7
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
1200 V
-
-
-
SiCFET (Silicon Carbide)
46A (Tc)
18V
+18V, -5V
TO-263-7L
-
NC1M
TO-263-8, DPak (7 Leads + Tab)
1402 pF @ 1000 V
75mOhm @ 20A, 18V
2.3V @ 5mA
240W (Ta)
NC1M120C75GTNG
SiC MOSFET N 1200V 75mohm 47A 3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
1200 V
-
-
-
SiCFET (Silicon Carbide)
47A (Tc)
20V
+20V, -5V
TO-247-3L
-
NC1M
TO-247-3
1450 pF @ 1000 V
75mOhm @ 20A, 20V
2.8V @ 5mA
288W (Ta)
NC1M120C75HTNG
SiC MOSFET N 1200V 75mohm 47A 4
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
1200 V
-
-
-
SiCFET (Silicon Carbide)
47A (Tc)
20V
+20V, -5V
TO-247-4L
-
NC1M
TO-247-4
1450 pF @ 1000 V
75mOhm @ 20A, 20V
2.8V @ 5mA
288W (Ta)
NC1M120C40GTNG
SiC MOSFET N 1200V 40mohm 76A 3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
1200 V
-
-
-
SiCFET (Silicon Carbide)
76A (Tc)
20V
+20V, -5V
TO-247-3L
-
NC1M
TO-247-3
2534 pF @ 1000 V
40mOhm @ 35A, 20V
2.8V @ 10mA
375W (Ta)
NC1M120C40HTNG
SiC MOSFET N 1200V 40mohm 75A 4
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
1200 V
-
-
-
SiCFET (Silicon Carbide)
75A (Tc)
20V
+20V, -5V
TO-247-4L
-
NC1M
TO-247-4
2534 pF @ 1000 V
40mOhm @ 35A, 20V
2.8V @ 10mA
366W (Ta)
NC1M120C12HTNG
SiC MOSFET N 1200V 12mohm 214A
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
1200 V
-
-
-
SiCFET (Silicon Carbide)
214A (Tc)
20V
+20V, -5V
TO-247-4L
-
NC1M
TO-247-4
8330 pF @ 1000 V
20mOhm @ 100A, 20V
3.5V @ 40mA
938W (Ta)

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.