CoolMOS™ CFD2 Series, Single FETs, MOSFETs

Results:
29
Manufacturer
Series
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Package / Case
Operating Temperature
Mounting Type
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining29
Applied Filters:
CoolMOS™ CFD2
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseDrain to Source Voltage (Vdss)GradeSupplier Device PackageTechnologyFET FeatureSeriesCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IPW65R190CFDFKSA2
MOSFET N-CH 650V 17.5A TO247-3
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
50,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
PG-TO247-3-41
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
17.5A (Tc)
10V
190mOhm @ 7.3A, 10V
4.5V @ 700µA
68 nC @ 10 V
±20V
1850 pF @ 100 V
151W (Tc)
-
IPL65R340CFDAUMA2
MOSFET N-CH 650V 10.9A 4VSON
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
650 V
-
PG-VSON-4
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
10.9A (Tc)
10V
340mOhm @ 4.4A, 10V
4.5V @ 400µA
41 nC @ 10 V
±20V
1100 pF @ 100 V
104.2W (Tc)
-
IPD65R950CFDATMA2
MOSFET N-CH 650V 3.9A TO252-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
650 V
-
PG-TO252-3
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
3.9A (Tc)
10V
950mOhm @ 1.5A, 10V
4.5V @ 200µA
14.1 nC @ 10 V
±20V
380 pF @ 100 V
36.7W (Tc)
-
IPW65R420CFDFKSA2
MOSFET N-CH 650V 8.7A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
PG-TO247-3-41
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
8.7A (Tc)
10V
420mOhm @ 3.4A, 10V
4.5V @ 300µA
31.5 nC @ 10 V
±20V
870 pF @ 100 V
83.3W (Tc)
-
IPA65R660CFDXKSA2
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
700 V
-
PG-TO220 Full Pack
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
6A (Tc)
10V
660mOhm @ 2.1A, 10V
4.5V @ 200µA
22 nC @ 10 V
±20V
615 pF @ 100 V
27.8W (Tc)
-
IPA65R420CFDXKSA2
MOSFET N-CH 650V 8.7A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
650 V
-
PG-TO220-FP
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
8.7A (Tc)
10V
420mOhm @ 3.4A, 10V
4.5V @ 300µA
31.5 nC @ 10 V
±20V
870 pF @ 100 V
31.2W (Tc)
-
IPB65R190CFDATMA2
MOSFET N-CH 650V 17.5A TO263-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
PG-TO263-3
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
17.5A (Tc)
10V
190mOhm @ 7.3A, 10V
4.5V @ 700µA
68 nC @ 10 V
±20V
1850 pF @ 100 V
151W (Tc)
-
IPW65R080CFDFKSA2
MOSFET N-CH 650V 43.3A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
PG-TO247-3
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
43.3A (Tc)
10V
80mOhm @ 17.6A, 10V
4.5V @ 1.8mA
167 nC @ 10 V
±20V
5030 pF @ 100 V
391W (Tc)
-
IPI65R190CFDXKSA2
MOSFET N-CH 650V 17.5A TO262-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
650 V
-
PG-TO262-3
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
17.5A (Tc)
10V
190mOhm @ 7.3A, 10V
4.5V @ 700µA
68 nC @ 10 V
±20V
1850 pF @ 100 V
151W (Tc)
-
IPL65R165CFDAUMA2
MOSFET N-CH 650V 21.3A 4VSON
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
650 V
-
PG-VSON-4
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
21.3A (Tc)
10V
165mOhm @ 9.3A, 10V
4.5V @ 900µA
86 nC @ 10 V
±20V
2340 pF @ 100 V
195W (Tc)
-
IPA65R110CFDXKSA2
MOSFET N-CH 650V 31.2A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
650 V
-
PG-TO220-FP
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
31.2A (Tc)
10V
110mOhm @ 12.7A, 10V
4.5V @ 1.3mA
118 nC @ 10 V
±20V
3240 pF @ 100 V
34.7W (Tc)
-
IPD65R660CFDATMA2
MOSFET N-CH 700V 6A TO252-3-313
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
700 V
-
PG-TO252-3-313
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
6A (Tc)
10V
660mOhm @ 2.1A, 10V
4.5V @ 200µA
22 nC @ 10 V
±20V
615 pF @ 100 V
63W (Tc)
-
IPB65R110CFDATMA2
MOSFET N-CH 650V 31.2A TO263-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
PG-TO263-3
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
31.2A (Tc)
10V
110mOhm @ 12.7A, 10V
4.5V @ 1.3mA
118 nC @ 10 V
±20V
3240 pF @ 100 V
277.8W (Tc)
-
IPW65R110CFDFKSA2
MOSFET N-CH 650V 31.2A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
PG-TO247-3-41
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
31.2A (Tc)
10V
110mOhm @ 12.7A, 10V
4.5V @ 1.3mA
118 nC @ 10 V
±20V
3240 pF @ 100 V
277.8W (Tc)
-
IPD65R1K4CFDATMA2
MOSFET N-CH 650V 2.8A TO252-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
650 V
-
PG-TO252-3
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
2.8A (Tc)
10V
1.4Ohm @ 1A, 10V
4.5V @ 100µA
10 nC @ 10 V
±20V
262 pF @ 100 V
28.4W (Tc)
-
IPD65R420CFDATMA2
MOSFET N-CH 650V 8.7A TO251-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
650 V
-
PG-TO252-3-341
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
8.7A (Tc)
10V
420mOhm @ 3.4A, 10V
4.5V @ 300µA
31.5 nC @ 10 V
±20V
870 pF @ 100 V
83.3W (Tc)
-
IPA65R150CFDXKSA2
MOSFET N-CH 650V 22.4A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
650 V
-
PG-TO220-FP
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
22.4A (Tc)
10V
150mOhm @ 9.3A, 10V
4.5V @ 900µA
86 nC @ 10 V
±20V
2340 pF @ 100 V
34.7W (Tc)
-
IPB65R150CFDATMA2
MOSFET N-CH 650V 22.4A TO263-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
PG-TO263-3
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
22.4A (Tc)
10V
150mOhm @ 9.3A, 10V
4.5V @ 900µA
86 nC @ 10 V
±20V
2340 pF @ 100 V
195.3W (Tc)
-
IPP65R310CFDXKSA2
MOSFET N-CH 650V 11.4A TO220-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
-
PG-TO220-3
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
11.4A (Tc)
10V
310mOhm @ 4.4A, 10V
4.5V @ 400µA
41 nC @ 10 V
±20V
1100 pF @ 100 V
104.2W (Tc)
-
IPA65R310CFDXKSA2
MOSFET N-CH 650V 11.4A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
650 V
-
PG-TO220-FP
MOSFET (Metal Oxide)
-
CoolMOS™ CFD2
11.4A (Tc)
10V
310mOhm @ 4.4A, 10V
4.5V @ 400µA
41 nC @ 10 V
±20V
1100 pF @ 100 V
32W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.