Photo Detectors - CdS Cells

Results:
74
Manufacturer
Cell Resistance @ Illuminance
Operating Temperature
Voltage - Max
Series
Package / Case
Rise Time (Typ)
Fall Time (Typ)
Mounting Type
Cell Resistance (Min) @ Dark
Supplier Device Package
Wavelength
Results remaining74
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ImageProduct DetailPriceAvailabilityECAD ModelSeriesSupplier Device PackageMounting TypePackage / CaseWavelengthVoltage - MaxRise Time (Typ)Fall Time (Typ)Cell Resistance (Min) @ DarkCell Resistance @ IlluminanceOperating Temperature
PDV-P8103
CDS PHOTORESISTOR 16-33KOHM
1+
$1.2587
5+
$1.1888
10+
$1.1189
Quantity
6,729 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
150Vpk
60 ms
25 ms
500 kOhms @ 10 s
16 ~ 33kOhms @ 10 lux
-30°C ~ 75°C (TA)
NSL-6110
CDS PHOTORESISTOR 170OHM TO-18
1+
$6.6713
5+
$6.3007
10+
$5.9301
Quantity
1,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
TO-18
Through Hole
Radial
615nm
100Vpk
-
-
1.3 MOhms @ 5 s
1.34 ~ 2.66kOhms @ 21 lux
-60°C ~ 75°C (TA)
PDV-P5003
CDS PHOTORESIST 12K-58KOHM 11MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
350Vpk
55 ms
25 ms
1 MOhms @ 10 s
12 ~ 58kOhms @ 10 lux
-30°C ~ 75°C (TA)
PDV-P7005
CDS PHOTORES 50K-150KOHM 7.2MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
350VDC
60 ms
25 ms
20 MOhms @ 10 s
50 ~ 150kOhms @ 10 lux
-
PDV-P7004
CDS PHOTORESIST 15K-60KOHM 7.2MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
350VDC
60 ms
25 ms
500 kOhms @ 10 s
15 ~ 60kOhm @ 10 lux
-
PDV-P7003
CDS PHOTORESIST 8K-24KOHM 7.2MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
350VDC
55 ms
20 ms
500 kOhms @ 10 s
8 ~ 24kOhms @ 10 lux
-
PDV-P7001
CDS PHOTORES 3.6K-14.4KOHM 7.2MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
350VDC
50 ms
20 ms
300 kOhms @ 10 s
3.6 ~ 14.4kOhms @ 10 lux
-
PDV-P9200
CDS PHOTORES 10K-50KOHM 4.20MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
150Vpk
70 ms
15 ms
5 MOhms @ 10 s
10 ~ 50kOhms @ 10 lux
-30°C ~ 75°C (TA)
PDV-P8107
CDS PHOTORES 80K-240KOHM 5.10MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
150Vpk
60 ms
25 ms
20 MOhms @ 10 s
80 ~ 240kOhms @ 10 lux
-30°C ~ 75°C (TA)
PDV-P9103
CDS PHOTORES 20K-45KOHM 4.20MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
150Vpk
60 ms
25 ms
1 MOhms @ 10 s
20 ~ 45kOhms @ 10 lux
-30°C ~ 75°C (TA)
NSL-5510
CDS PHOTORES TYPE 5 FLAT TO-5
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Quantity
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PCB Symbol, Footprint & 3D Model
-
TO-5
Through Hole
Radial
550nm
120Vpk
-
-
220 kOhms @ 5 s
2.2 ~ 4.4kOhms @ 21 lux
-60°C ~ 75°C (TA)
PDV-P9001
CDS PHOTORESIST 4K-11KOHM 4.20MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
150Vpk
60 ms
25 ms
300 kOhms @ 10 s
4 ~ 11kOhms @ 10 lux
-25°C ~ 75°C (TA)
PDV-P9003-1
CDS PHOTORES 23K-33KOHM 4.20MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
150Vpk
60 ms
25 ms
1 MOhms @ 10 s
23 ~ 33kOhms @ 10 lux
-30°C ~ 75°C (TA)
PDV-P9005-1
CDS PHOTORES 48K-140KOHM 4.20MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
150Vpk
60 ms
25 ms
20 MOhms @ 10 s
48 ~ 140kOhms @ 10 lux
-30°C ~ 75°C (TA)
NSL-5162
CDS PHOTORESISTOR
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
550nm
100Vpk
-
-
67 MOhms @ 5 s
3 ~ 100kOhms @ 10 lux
-60°C ~ 75°C (TA)
NSL-5152
CDS PHOTORESISTOR 400OHM TO-18
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
550nm
100Vpk
-
-
5 MOhms @ 5 s
10 ~ 20kOhms @ 21 lux
-60°C ~ 75°C (TA)
NSL-4140
CDS PHOTORESISTOR 250OHM TO-18
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Quantity
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PCB Symbol, Footprint & 3D Model
-
TO-18
Through Hole
Radial
550nm
100Vpk
-
-
800 kOhms @ 5 s
8.4 ~ 19.6kOhms @ 10 lux
-60°C ~ 75°C (TA)
NSL-5110
CDS PHOTORESISTOR
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Quantity
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PCB Symbol, Footprint & 3D Model
-
TO-18
Through Hole
Radial
550nm
100Vpk
-
-
670 kOhms @ 5 s
0.7 ~ 10kOhms @ 10 lux
-60°C ~ 75°C (TA)
NORPS-12
CDS PHOTORESISTOR
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Quantity
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PCB Symbol, Footprint & 3D Model
-
TO-18
Through Hole
Radial
550nm
250Vpk
-
-
1 MOhms @ 15 s
5.4 ~ 12.6kOhms @ 10 lux
-60°C ~ 75°C (TA)
NSL-6112
CDS PHOTORESISTOR
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
690nm
100Vpk
-
-
1.3 MOhms @ 5 s
0.17 ~ 2kOhms @ 21 lux
-60°C ~ 75°C (TA)

Photo Detectors - CdS Cells

Cadmium sulfide (CdS) photodetectors, commonly referred to as photoresistors, light-dependent resistors (LDRs), or photo-conductive cells, are semiconductor devices with high resistance that exhibit variable resistance based on incident light intensity. These devices are widely used in applications where light detection and control are required. The fundamental operation of a CdS photodetector is based on the principle of photoconductivity. When no light is present, the CdS material has a high resistance, limiting the flow of electric current. However, when exposed to light, the photons excite electrons in the CdS, causing them to migrate and reducing the resistance of the material. As a result, the device acts as a light-controlled variable resistor. Photoresistors are selected based on various characteristics, including cell resistance, maximum voltage, and rise and fall times. The cell resistance determines the initial resistance of the device in darkness, while the maximum voltage specifies the highest voltage that can be applied across the photoresistor without damaging it. Rise and fall times refer to the speed at which the resistance changes when the light intensity increases or decreases. These photodetectors find applications in diverse fields, including light sensing, automatic lighting control, burglar alarms, camera exposure control, and robotics. Their ability to detect and respond to changes in light intensity makes them useful in situations where automatic adjustments or triggering based on ambient light conditions are required. In summary, CdS photodetectors, also called photoresistors or LDRs, are semiconductor devices with high resistance that vary their resistance based on incident light intensity. They operate on the principle of photoconductivity, with the resistance decreasing as the light intensity increases. Photoresistors are chosen based on characteristics such as cell resistance, maximum voltage, and rise and fall times. These devices have numerous applications in light sensing, automatic control systems, burglar alarms, and more, where their light-dependent resistance enables responsive adjustments to ambient light conditions.