TrenchT2™ Series, Single FETs, MOSFETs

Results:
72
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Mounting Type
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining72
Applied Filters:
TrenchT2™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseOperating TemperatureGradeSupplier Device PackageTechnologyFET FeatureVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTA90N075T2
MOSFET N-CH 75V 90A TO263
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
6,200 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
TO-263AA
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
75 V
90A (Tc)
10V
10mOhm @ 25A, 10V
54 nC @ 10 V
±20V
3290 pF @ 25 V
180W (Tc)
-
IXTA230N075T2
MOSFET N-CH 75V 230A TO263
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
378 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
TO-263AA
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
75 V
230A (Tc)
10V
4.2mOhm @ 50A, 10V
178 nC @ 10 V
±20V
10500 pF @ 25 V
480W (Tc)
-
IXTA100N04T2
MOSFET N-CH 40V 100A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
TO-263AA
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
40 V
100A (Tc)
10V
7mOhm @ 25A, 10V
25.5 nC @ 10 V
±20V
2690 pF @ 25 V
150W (Tc)
-
IXTP300N04T2
MOSFET N-CH 40V 300A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-55°C ~ 175°C (TJ)
-
TO-220-3
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
40 V
300A (Tc)
10V
2.5mOhm @ 500mA, 10V
145 nC @ 10 V
±20V
10700 pF @ 25 V
480W (Tc)
-
IXTA220N04T2-7
MOSFET N-CH 40V 220A TO263-7
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
-55°C ~ 175°C (TJ)
-
TO-263-7 (IXTA)
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
40 V
220A (Tc)
10V
3.5mOhm @ 50A, 10V
112 nC @ 10 V
±20V
6820 pF @ 25 V
360W (Tc)
-
IXTA300N04T2-7
MOSFET N-CH 40V 300A TO263-7
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
-55°C ~ 175°C (TJ)
-
TO-263-7 (IXTA)
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
40 V
300A (Tc)
10V
2.5mOhm @ 50A, 10V
145 nC @ 10 V
±20V
10700 pF @ 25 V
480W (Tc)
-
IXTA230N075T2-TRL
MOSFET N-CH 75V 230A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
75 V
230A (Tc)
10V
4.2mOhm @ 50A, 10V
178 nC @ 10 V
±20V
10500 pF @ 25 V
480W (Tc)
-
IXTA120N075T2
MOSFET N-CH 75V 120A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
TO-263AA
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
75 V
120A (Tc)
10V
7.7mOhm @ 60A, 10V
78 nC @ 10 V
±20V
4740 pF @ 25 V
250W (Tc)
-
IXTA220N04T2-TRL
MOSFET N-CH 40V 220A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
40 V
220A (Tc)
10V
3.5mOhm @ 50A, 10V
112 nC @ 10 V
±20V
6820 pF @ 25 V
360W (Tc)
-
IXTA200N055T2-TRL
MOSFET N-CH 55V 200A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
55 V
200A (Tc)
10V
4.2mOhm @ 50A, 10V
109 nC @ 10 V
±20V
6970 pF @ 25 V
360W (Tc)
-
IXTP120N04T2
MOSFET N-CH 40V 120A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-55°C ~ 175°C (TJ)
-
TO-220-3
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
40 V
120A (Tc)
10V
6.1mOhm @ 25A, 10V
58 nC @ 10 V
±20V
3240 pF @ 25 V
200W (Tc)
-
IXTA110N12T2
MOSFET N-CH 120V 110A TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
TO-263AA
MOSFET (Metal Oxide)
-
4.5V @ 250µA
TrenchT2™
120 V
110A (Tc)
10V
14mOhm @ 55A, 10V
120 nC @ 10 V
±20V
6570 pF @ 25 V
517W (Tc)
-
IXTA70N075T2-TRL
MOSFET N-CH 75V 70A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
75 V
70A (Tc)
10V
12mOhm @ 25A, 10V
46 nC @ 10 V
±20V
2725 pF @ 25 V
150W (Tc)
-
IXTY90N055T2-TRL
MOSFET N-CH 55V 90A TO252
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-55°C ~ 175°C (TJ)
-
TO-252AA
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
55 V
90A (Tc)
10V
8.4mOhm @ 25A, 10V
42 nC @ 10 V
±20V
2770 pF @ 25 V
150W (Tc)
-
IXTN550N055T2
MOSFET N-CH 55V 550A SOT227B
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
N-Channel
SOT-227-4, miniBLOC
-55°C ~ 175°C (TJ)
-
SOT-227B
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
55 V
550A (Tc)
10V
1.3mOhm @ 100A, 10V
595 nC @ 10 V
±20V
40000 pF @ 25 V
940W (Tc)
-
IXTA200N055T2
MOSFET N-CH 55V 200A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
TO-263AA
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
55 V
200A (Tc)
10V
4.2mOhm @ 50A, 10V
109 nC @ 10 V
±20V
6800 pF @ 25 V
360W (Tc)
-
IXTP170N075T2
MOSFET N-CH 75V 170A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-55°C ~ 175°C (TJ)
-
TO-220-3
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
75 V
170A (Tc)
10V
5.4mOhm @ 50A, 10V
109 nC @ 10 V
±20V
6860 pF @ 25 V
360W (Tc)
-
IXTP120N075T2
MOSFET N-CH 75V 120A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-55°C ~ 175°C (TJ)
-
TO-220-3
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
75 V
120A (Tc)
10V
7.7mOhm @ 60A, 10V
78 nC @ 10 V
±20V
4740 pF @ 25 V
250W (Tc)
-
IXTH420N04T2
MOSFET N-CH 40V 420A TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
-55°C ~ 175°C (TJ)
-
TO-247 (IXTH)
MOSFET (Metal Oxide)
-
3.5V @ 250µA
TrenchT2™
40 V
420A (Tc)
10V
2mOhm @ 100A, 10V
315 nC @ 10 V
±20V
19700 pF @ 25 V
935W (Tc)
-
IXTP110N12T2
MOSFET N-CH 120V 110A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-55°C ~ 175°C (TJ)
-
TO-220-3
MOSFET (Metal Oxide)
-
4.5V @ 250µA
TrenchT2™
120 V
110A (Tc)
10V
14mOhm @ 55A, 10V
120 nC @ 10 V
±20V
6570 pF @ 25 V
517W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.