SuperFET® V Series, Single FETs, MOSFETs

Results:
4
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Grade
Mounting Type
Drain to Source Voltage (Vdss)
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining4
Applied Filters:
SuperFET® V
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageGradeTechnologyFET FeatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
NTHL120N60S5Z
MOSFET N-CH 600V 22A TO3PN
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
-
SuperFET® V
600 V
28A (Tj)
10V
120mOhm @ 11.5A, 10V
4V @ 2.2mA
40 nC @ 10 V
±20V
2088 pF @ 400 V
160W (Tc)
-
NTHL041N60S5H
NTHL041N60S5H
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
-
SuperFET® V
600 V
57A (Tc)
10V
41mOhm @ 28.5A, 10V
4.3V @ 6.7mA
108 nC @ 10 V
±30V
5840 pF @ 400 V
329W (Tc)
-
NTP185N60S5H
MOSFET N-CH 600V 15A TO220-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
SuperFET® V
600 V
15A (Tc)
10V
185mOhm @ 7.5A, 10V
4.3V @ 1.4mA
25 nC @ 10 V
±30V
1350 pF @ 400 V
116W (Tc)
-
NTHL099N60S5
NTHL099N60S5
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
-
SuperFET® V
600 V
33A (Tc)
10V
99mOhm @ 13.5A, 10V
4V @ 2.8mA
48 nC @ 10 V
±30V
2500 pF @ 400 V
184W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.