HiPerFET™, Polar Series, Single FETs, MOSFETs

Results:
235
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Package / Case
Mounting Type
Operating Temperature
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Technology
FET Feature
Grade
Qualification
Results remaining235
Applied Filters:
HiPerFET™, Polar
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeGradePackage / CaseTechnologySupplier Device PackageFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXFL100N50P
MOSFET N-CH 500V 70A ISOPLUS264
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
52,688 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-264-3, TO-264AA
MOSFET (Metal Oxide)
ISOPLUS264™
-
70A (Tc)
HiPerFET™, Polar
500 V
10V
52mOhm @ 50A, 10V
5V @ 8mA
240 nC @ 10 V
±30V
20000 pF @ 25 V
625W (Tc)
-
IXFH16N80P
MOSFET N-CH 800V 16A TO247AD
1+
$30.4225
5+
$28.7324
10+
$27.0423
Quantity
20,186 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
TO-247AD (IXFH)
-
16A (Tc)
HiPerFET™, Polar
800 V
10V
600mOhm @ 500mA, 10V
5V @ 4mA
71 nC @ 10 V
±30V
4600 pF @ 25 V
460W (Tc)
-
IXFX44N80P
MOSFET N-CH 800V 44A PLUS247-3
1+
$5.5775
5+
$5.2676
10+
$4.9577
Quantity
8,063 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3 Variant
MOSFET (Metal Oxide)
PLUS247™-3
-
44A (Tc)
HiPerFET™, Polar
800 V
10V
190mOhm @ 22A, 10V
5V @ 8mA
198 nC @ 10 V
±30V
12000 pF @ 25 V
1040W (Tc)
-
IXFK64N50P
MOSFET N-CH 500V 64A TO264AA
1+
$10.1408
5+
$9.5775
10+
$9.0141
Quantity
7,915 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-264-3, TO-264AA
MOSFET (Metal Oxide)
TO-264AA (IXFK)
-
64A (Tc)
HiPerFET™, Polar
500 V
10V
85mOhm @ 32A, 10V
5.5V @ 8mA
150 nC @ 10 V
±30V
8700 pF @ 25 V
830W (Tc)
-
IXFB30N120P
MOSFET N-CH 1200V 30A PLUS264
1+
$88.7324
5+
$83.8028
10+
$78.8732
Quantity
6,230 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-264-3, TO-264AA
MOSFET (Metal Oxide)
PLUS264™
-
30A (Tc)
HiPerFET™, Polar
1200 V
10V
350mOhm @ 500mA, 10V
6.5V @ 1mA
310 nC @ 10 V
±20V
22500 pF @ 25 V
1250W (Tc)
-
IXFK140N30P
MOSFET N-CH 300V 140A TO264AA
1+
$30.6811
5+
$28.9766
10+
$27.2721
Quantity
6,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-264-3, TO-264AA
MOSFET (Metal Oxide)
TO-264AA (IXFK)
-
140A (Tc)
HiPerFET™, Polar
300 V
10V
24mOhm @ 70A, 10V
5V @ 8mA
185 nC @ 10 V
±20V
14800 pF @ 25 V
1040W (Tc)
-
IXFR40N90P
MOSFET N-CH 900V 21A ISOPLUS247
1+
$152.1127
5+
$143.6620
10+
$135.2113
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
ISOPLUS247™
-
21A (Tc)
HiPerFET™, Polar
900 V
10V
230mOhm @ 20A, 10V
6.5V @ 1mA
230 nC @ 10 V
±30V
14000 pF @ 25 V
300W (Tc)
-
IXFT16N120P
MOSFET N-CH 1200V 16A TO268
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
4,800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
MOSFET (Metal Oxide)
TO-268AA
-
16A (Tc)
HiPerFET™, Polar
1200 V
10V
950mOhm @ 500mA, 10V
6.5V @ 1mA
120 nC @ 10 V
±30V
6900 pF @ 25 V
660W (Tc)
-
IXFP7N100P
MOSFET N-CH 1000V 7A TO220AB
1+
$5.8310
5+
$5.5070
10+
$5.1831
Quantity
4,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3
MOSFET (Metal Oxide)
TO-220-3
-
7A (Tc)
HiPerFET™, Polar
1000 V
10V
1.9Ohm @ 3.5A, 10V
6V @ 1mA
47 nC @ 10 V
±30V
2590 pF @ 25 V
300W (Tc)
-
IXFA6N120P
MOSFET N-CH 1200V 6A TO263
1+
$22.0563
5+
$20.8310
10+
$19.6056
Quantity
4,200 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
TO-263AA (IXFA)
-
6A (Tc)
HiPerFET™, Polar
1200 V
10V
2.4Ohm @ 500mA, 10V
5V @ 1mA
92 nC @ 10 V
±30V
2830 pF @ 25 V
250W (Tc)
-
IXFP4N100PM
MOSFET N-CH 1000V 2.1A TO220
1+
$8.8732
5+
$8.3803
10+
$7.8873
Quantity
3,933 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3 Full Pack, Isolated Tab
MOSFET (Metal Oxide)
TO-220 Isolated Tab
-
2.1A (Tc)
HiPerFET™, Polar
1000 V
10V
3.3Ohm @ 2A, 10V
6V @ 250µA
26 nC @ 10 V
±20V
1456 pF @ 25 V
40W (Tc)
-
IXFH18N90P
MOSFET N-CH 900V 18A TO247AD
1+
$17.4930
5+
$16.5211
10+
$15.5493
Quantity
3,630 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
TO-247AD (IXFH)
-
18A (Tc)
HiPerFET™, Polar
900 V
10V
600mOhm @ 500mA, 10V
6.5V @ 1mA
97 nC @ 10 V
±30V
5230 pF @ 25 V
540W (Tc)
-
IXFP14N85XM
MOSFET N-CHANNEL 850V 14A TO220
1+
$7.0986
5+
$6.7042
10+
$6.3099
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3 Full Pack
MOSFET (Metal Oxide)
TO-220
-
14A (Tc)
HiPerFET™, Polar
850 V
10V
550mOhm @ 7A, 10V
5.5V @ 1mA
30 nC @ 10 V
±30V
1043 pF @ 25 V
38W (Tc)
-
IXFP5N100PM
MOSFET N-CH 1000V 2.3A TO220
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3 Full Pack, Isolated Tab
MOSFET (Metal Oxide)
TO-220 Isolated Tab
-
2.3A (Tc)
HiPerFET™, Polar
1000 V
10V
2.8Ohm @ 2.5A, 10V
6V @ 250µA
33.4 nC @ 10 V
±30V
1830 pF @ 25 V
42W (Tc)
-
IXFH26N50P
MOSFET N-CH 500V 26A TO247AD
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
2,694 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
TO-247AD (IXFH)
-
26A (Tc)
HiPerFET™, Polar
500 V
10V
230mOhm @ 13A, 10V
5.5V @ 4mA
60 nC @ 10 V
±30V
3600 pF @ 25 V
400W (Tc)
-
IXFA7N100P
MOSFET N-CH 1000V 7A TO263
1+
$88.7324
5+
$83.8028
10+
$78.8732
Quantity
2,330 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
TO-263AA (IXFA)
-
7A (Tc)
HiPerFET™, Polar
1000 V
10V
1.9Ohm @ 3.5A, 10V
6V @ 1mA
47 nC @ 10 V
±30V
2590 pF @ 25 V
300W (Tc)
-
IXFH12N90P
MOSFET N-CH 900V 12A TO247AD
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
2,134 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
TO-247AD (IXFH)
-
12A (Tc)
HiPerFET™, Polar
900 V
10V
900mOhm @ 6A, 10V
6.5V @ 1mA
56 nC @ 10 V
±30V
3080 pF @ 25 V
380W (Tc)
-
IXFP6N120P
MOSFET N-CH 1200V 6A TO220AB
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
2,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3
MOSFET (Metal Oxide)
TO-220-3
-
6A (Tc)
HiPerFET™, Polar
1200 V
10V
2.4Ohm @ 500mA, 10V
5V @ 1mA
92 nC @ 10 V
±30V
2830 pF @ 25 V
250W (Tc)
-
IXFK44N80P
MOSFET N-CH 800V 44A TO264AA
1+
$13.9437
5+
$13.1690
10+
$12.3944
Quantity
1,711 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-264-3, TO-264AA
MOSFET (Metal Oxide)
TO-264AA (IXFK)
-
44A (Tc)
HiPerFET™, Polar
800 V
10V
190mOhm @ 22A, 10V
5V @ 8mA
198 nC @ 10 V
±30V
12000 pF @ 25 V
1040W (Tc)
-
IXFR26N120P
MOSFET N-CH 1200V 15A ISOPLUS247
1+
$76.0563
5+
$71.8310
10+
$67.6056
Quantity
1,670 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
ISOPLUS247™
-
15A (Tc)
HiPerFET™, Polar
1200 V
10V
500mOhm @ 13A, 10V
6.5V @ 1mA
225 nC @ 10 V
±30V
14000 pF @ 25 V
320W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.