U-MOSIV Series, Single FETs, MOSFETs

Results:
35
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Drain to Source Voltage (Vdss)
Vgs (Max)
Operating Temperature
FET Type
Mounting Type
Technology
FET Feature
Grade
Qualification
Results remaining35
Applied Filters:
U-MOSIV
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseOperating TemperatureDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
TK8S06K3L(T6L1,NQ)
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
12,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
175°C (TJ)
60 V
-
MOSFET (Metal Oxide)
-
8A (Ta)
3V @ 1mA
U-MOSIV
6V, 10V
54mOhm @ 4A, 10V
10 nC @ 10 V
±20V
400 pF @ 10 V
25W (Tc)
DPAK+
-
SSM6K411TU(TE85L,F
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
6-SMD, Flat Leads
150°C (TJ)
20 V
-
MOSFET (Metal Oxide)
-
10A (Ta)
1.2V @ 1mA
U-MOSIV
2.5V, 4.5V
12mOhm @ 7A, 4.5V
9.4 nC @ 4.5 V
±12V
710 pF @ 10 V
1W (Ta)
UF6
-
TPCC8009,LQ(O
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
24A (Ta)
3V @ 200µA
U-MOSIV
-
7mOhm @ 12A, 10V
26 nC @ 10 V
-
1270 pF @ 10 V
-
8-TSON Advance (3.1x3.1)
-
TPC6012(TE85L,F,M)
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
SOT-23-6 Thin, TSOT-23-6
150°C (TJ)
20 V
-
MOSFET (Metal Oxide)
-
6A (Ta)
1.2V @ 200µA
U-MOSIV
2.5V, 4.5V
20mOhm @ 3A, 4.5V
9 nC @ 5 V
±12V
630 pF @ 10 V
700mW (Ta)
VS-6 (2.9x2.8)
-
TPC6011(TE85L,F,M)
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
SOT-23-6 Thin, TSOT-23-6
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
6A (Ta)
2.5V @ 1mA
U-MOSIV
4.5V, 10V
20mOhm @ 3A, 10V
14 nC @ 10 V
±20V
640 pF @ 10 V
700mW (Ta)
VS-6 (2.9x2.8)
-
TK80S06K3L(T6L1,NQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
175°C (TJ)
60 V
-
MOSFET (Metal Oxide)
-
80A (Ta)
3V @ 1mA
U-MOSIV
6V, 10V
5.5mOhm @ 40A, 10V
85 nC @ 10 V
±20V
4200 pF @ 10 V
100W (Tc)
DPAK+
-
TK80S04K3L(T6L1,NQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
175°C (TJ)
40 V
-
MOSFET (Metal Oxide)
-
80A (Ta)
3V @ 1mA
U-MOSIV
6V, 10V
3.1mOhm @ 40A, 10V
87 nC @ 10 V
±20V
4340 pF @ 10 V
100W (Tc)
DPAK+
-
TK65S04K3L(T6L1,NQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
175°C (TJ)
40 V
-
MOSFET (Metal Oxide)
-
65A (Ta)
3V @ 1mA
U-MOSIV
6V, 10V
4.5mOhm @ 32.5A, 10V
63 nC @ 10 V
±20V
2800 pF @ 10 V
88W (Tc)
DPAK+
-
TK50E06K3(S1SS-Q)
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-
TO-220-3
-
-
-
-
-
-
-
U-MOSIV
-
-
-
-
-
-
TO-220-3
-
TK50E06K3A,S1X(S
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-
60 V
-
MOSFET (Metal Oxide)
-
50A (Tc)
-
U-MOSIV
-
8.5mOhm @ 25A, 10V
54 nC @ 10 V
-
-
-
TO-220-3
-
TK10S04K3L(T6L1,NQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
175°C (TJ)
40 V
-
MOSFET (Metal Oxide)
-
10A (Ta)
3V @ 1mA
U-MOSIV
6V, 10V
28mOhm @ 5A, 10V
10 nC @ 10 V
±20V
410 pF @ 10 V
25W (Tc)
DPAK+
-
SSM3K7002BF,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-236-3, SC-59, SOT-23-3
150°C (TJ)
60 V
-
MOSFET (Metal Oxide)
-
200mA (Ta)
-
U-MOSIV
4.5V, 10V
2.1Ohm @ 500mA, 10V
-
±20V
17 pF @ 25 V
200mW (Ta)
SC-59
-
TK8A10K3,S5Q
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
150°C (TJ)
100 V
-
MOSFET (Metal Oxide)
-
8A (Ta)
4V @ 1mA
U-MOSIV
10V
120mOhm @ 4A, 10V
12.9 nC @ 10 V
±20V
530 pF @ 10 V
18W (Tc)
TO-220SIS
-
TK40S10K3Z(T6L1,NQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
175°C (TJ)
100 V
-
MOSFET (Metal Oxide)
-
40A (Ta)
4V @ 1mA
U-MOSIV
10V
18mOhm @ 20A, 10V
61 nC @ 10 V
±20V
3110 pF @ 10 V
93W (Tc)
DPAK+
-
TK40E10K3,S1X(S
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-
100 V
-
MOSFET (Metal Oxide)
-
40A (Ta)
4V @ 1mA
U-MOSIV
-
15mOhm @ 20A, 10V
84 nC @ 10 V
-
4000 pF @ 10 V
-
TO-220-3
-
TK30S06K3L(T6L1,NQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
175°C (TJ)
60 V
-
MOSFET (Metal Oxide)
-
30A (Ta)
3V @ 1mA
U-MOSIV
6V, 10V
18Ohm @ 15A, 10V
28 nC @ 10 V
±20V
1350 pF @ 10 V
58W (Tc)
DPAK+
-
TK25E06K3,S1X(S
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
150°C (TJ)
60 V
-
MOSFET (Metal Oxide)
-
25A (Ta)
-
U-MOSIV
-
18mOhm @ 12.5A, 10V
29 nC @ 10 V
-
-
60W (Tc)
TO-220-3
-
TK20S06K3L(T6L1,NQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
175°C (TJ)
60 V
-
MOSFET (Metal Oxide)
-
20A (Ta)
3V @ 1mA
U-MOSIV
6V, 10V
29mOhm @ 10A, 10V
18 nC @ 10 V
±20V
780 pF @ 10 V
38W (Tc)
DPAK+
-
TK20S04K3L(T6L1,NQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
175°C (TJ)
40 V
-
MOSFET (Metal Oxide)
-
20A (Ta)
3V @ 1mA
U-MOSIV
6V, 10V
14mOhm @ 10A, 10V
18 nC @ 10 V
±20V
820 pF @ 10 V
38W (Tc)
DPAK+
-
TK18E10K3,S1X(S
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
150°C (TJ)
100 V
-
MOSFET (Metal Oxide)
-
18A (Ta)
-
U-MOSIV
-
42mOhm @ 9A, 10V
33 nC @ 10 V
-
-
-
TO-220-3
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.