OptiMOS™, StrongIRFET™ Series, Single FETs, MOSFETs

Results:
4
Manufacturer
Series
Drain to Source Voltage (Vdss)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Grade
Mounting Type
Qualification
Technology
Results remaining4
Applied Filters:
OptiMOS™, StrongIRFET™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeInput Capacitance (Ciss) (Max) @ VdsGradePackage / CaseTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Vgs (Max)Supplier Device PackagePower Dissipation (Max)Qualification
BSC430N25NSFDATMA1
1+
$4.8676
5+
$4.5972
10+
$4.3268
Quantity
22,683 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-
N-Channel
-
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
36A (Tc)
-
-
-
OptiMOS™, StrongIRFET™
250 V
-
±20V
PG-TSON-8-3
-
-
BSC021N08NS5ATMA1
1+
$8.8732
5+
$8.3803
10+
$7.8873
Quantity
700 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
8600 pF @ 40 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
Standard
100A (Tc)
2.1mOhm @ 50A, 10V
3.8V @ 146µA
29 nC @ 10 V
OptiMOS™, StrongIRFET™
80 V
6V, 10V
±20V
PG-TSON-8-3
214W (Tc)
-
BSC014N06LS5ATMA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-
-
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
-
-
-
-
OptiMOS™, StrongIRFET™
60 V
-
-
PG-TDSON-8-7
-
-
ISK024NE2LM5AULA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-
-
-
6-PowerVDFN
MOSFET (Metal Oxide)
-
-
-
-
-
OptiMOS™, StrongIRFET™
40 V
-
±16V
6-PQFN Dual (2x2)
-
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.