aMOS™ Series, Single FETs, MOSFETs

Results:
79
Manufacturer
Series
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Mounting Type
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining79
Applied Filters:
aMOS™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
AOD11S60
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
11,920 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
11A (Tc)
aMOS™
600 V
10V
399mOhm @ 3.8A, 10V
4.1V @ 250µA
11 nC @ 10 V
±30V
545 pF @ 100 V
208W (Tc)
-
AOTF15S60L
1+
$1.1662
5+
$1.1014
10+
$1.0366
Quantity
10,824 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
-
TO-220F
MOSFET (Metal Oxide)
-
15A (Tc)
aMOS™
600 V
10V
290mOhm @ 7.5A, 10V
3.8V @ 250µA
15.6 nC @ 10 V
±30V
717 pF @ 100 V
27.8W (Tc)
-
AOB4S60L
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
4,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
4A (Tc)
aMOS™
600 V
10V
900mOhm @ 2A, 10V
4.1V @ 250µA
6 nC @ 10 V
±30V
263 pF @ 100 V
83W (Tc)
-
AOK42S60L
1+
$10.1383
5+
$9.5751
10+
$9.0118
Quantity
3,600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247
MOSFET (Metal Oxide)
-
39A (Tc)
aMOS™
600 V
10V
99mOhm @ 21A, 10V
3.8V @ 250µA
40 nC @ 10 V
±30V
2154 pF @ 100 V
417W (Tc)
-
AOT27S60L
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
2,441 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
TO-220
MOSFET (Metal Oxide)
-
27A (Tc)
aMOS™
600 V
10V
160mOhm @ 13.5A, 10V
4V @ 250µA
26 nC @ 10 V
±30V
1294 pF @ 100 V
357W (Tc)
-
AOK53S60
1+
$4.0563
5+
$3.8310
10+
$3.6056
Quantity
1,454 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247
MOSFET (Metal Oxide)
-
53A (Tc)
aMOS™
600 V
10V
70mOhm @ 26.5A, 10V
3.8V @ 250µA
59 nC @ 10 V
±30V
3034 pF @ 100 V
520W (Tc)
-
AOB25S65L
1+
$5.3239
5+
$5.0282
10+
$4.7324
Quantity
800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
25A (Tc)
aMOS™
650 V
10V
190mOhm @ 12.5A, 10V
4V @ 250µA
26.4 nC @ 10 V
±30V
1278 pF @ 100 V
357W (Tc)
-
AOT15S60L
1+
$1.1408
5+
$1.0775
10+
$1.0141
Quantity
630 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
TO-220
MOSFET (Metal Oxide)
-
15A (Tc)
aMOS™
600 V
10V
290mOhm @ 7.5A, 10V
3.8V @ 250µA
15.6 nC @ 10 V
±30V
372 pF @ 100 V
208W (Tc)
-
AOTF11S60L
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
450 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
-
TO-220F
MOSFET (Metal Oxide)
-
11A (Tc)
aMOS™
600 V
10V
399mOhm @ 3.8A, 10V
4.1V @ 250µA
11 nC @ 10 V
±30V
545 pF @ 100 V
38W (Tc)
-
AOB27S60L
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
27A (Tc)
aMOS™
600 V
10V
160mOhm @ 13.5A, 10V
4V @ 250µA
26 nC @ 10 V
±30V
1294 pF @ 100 V
357W (Tc)
-
AOT7S65L
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
TO-220
MOSFET (Metal Oxide)
-
7A (Tc)
aMOS™
650 V
10V
650mOhm @ 3.5A, 10V
4V @ 250µA
9.2 nC @ 10 V
±30V
434 pF @ 100 V
104W (Tc)
-
AOU7S60
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
-
TO-251-3
MOSFET (Metal Oxide)
-
7A (Tc)
aMOS™
600 V
10V
600mOhm @ 3.5A, 10V
3.9V @ 250µA
8.2 nC @ 10 V
±30V
372 pF @ 100 V
83W (Tc)
-
AOD7S65
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
7A (Tc)
aMOS™
650 V
10V
650mOhm @ 3.5A, 10V
4V @ 250µA
9.2 nC @ 10 V
±30V
434 pF @ 100 V
89W (Tc)
-
AOT42S60L
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
TO-220
MOSFET (Metal Oxide)
-
37A (Tc)
aMOS™
600 V
10V
99mOhm @ 21A, 10V
3.8V @ 250µA
40 nC @ 10 V
±30V
2154 pF @ 100 V
417W (Tc)
-
AOTF42S60
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
-
TO-220F
MOSFET (Metal Oxide)
-
39A
aMOS™
600 V
10V
99mOhm @ 21A, 10V
3.8V @ 250µA
40 nC @ 10 V
±30V
2154 pF @ 100 V
50W
-
AOT20S60L
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
TO-220
MOSFET (Metal Oxide)
-
20A (Tc)
aMOS™
600 V
10V
199mOhm @ 10A, 10V
4.1V @ 250µA
19.8 nC @ 10 V
±30V
1038 pF @ 100 V
266W (Tc)
-
AOT11S60L
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
TO-220
MOSFET (Metal Oxide)
-
11A (Tc)
aMOS™
600 V
10V
399mOhm @ 3.8A, 10V
4.1V @ 250µA
11 nC @ 10 V
±30V
545 pF @ 100 V
178W (Tc)
-
AON6370_002
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-VDFN Exposed Pad
8-DFN (5x6)
MOSFET (Metal Oxide)
-
23A (Ta), 47A (Tc)
aMOS™
30 V
4.5V, 10V
7.2mOhm @ 20A, 10V
2.2V @ 250µA
13 nC @ 10 V
±20V
840 pF @ 15 V
6.2W (Ta), 26W (Tc)
AON6370_001
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-VDFN Exposed Pad
8-DFN (5x6)
MOSFET (Metal Oxide)
-
23A (Ta), 47A (Tc)
aMOS™
30 V
4.5V, 10V
7.2mOhm @ 20A, 10V
2.2V @ 250µA
13 nC @ 10 V
±20V
840 pF @ 15 V
6.2W (Ta), 26W (Tc)
AOU7S65
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
-
TO-251-3
MOSFET (Metal Oxide)
-
7A (Tc)
aMOS™
600 V
10V
650mOhm @ 3.5A, 10V
4V @ 250µA
9.2 nC @ 10 V
±30V
434 pF @ 100 V
89W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.