PolarP™ Series, Single FETs, MOSFETs

Results:
45
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Gate Charge (Qg) (Max) @ Vgs
Package / Case
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Mounting Type
Operating Temperature
Grade
Qualification
FET Feature
FET Type
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining45
Applied Filters:
PolarP™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTP10P50P
MOSFET P-CH 500V 10A TO220AB
1+
$4.9437
5+
$4.6690
10+
$4.3944
Quantity
4,003 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
P-Channel
-
MOSFET (Metal Oxide)
-
10A (Tc)
4V @ 250µA
PolarP™
500 V
10V
1Ohm @ 5A, 10V
50 nC @ 10 V
±20V
2840 pF @ 25 V
300W (Tc)
-
IXTH48P20P
MOSFET P-CH 200V 48A TO247
1+
$13.9437
5+
$13.1690
10+
$12.3944
Quantity
3,600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247 (IXTH)
P-Channel
-
MOSFET (Metal Oxide)
-
48A (Tc)
4.5V @ 250µA
PolarP™
200 V
10V
85mOhm @ 500mA, 10V
103 nC @ 10 V
±20V
5400 pF @ 25 V
462W (Tc)
-
IXTH10P50P
MOSFET P-CH 500V 10A TO247
1+
$5.7042
5+
$5.3873
10+
$5.0704
Quantity
3,359 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247 (IXTH)
P-Channel
-
MOSFET (Metal Oxide)
-
10A (Tc)
4V @ 250µA
PolarP™
500 V
10V
1Ohm @ 5A, 10V
50 nC @ 10 V
±20V
2840 pF @ 25 V
300W (Tc)
-
IXTH26P20P
MOSFET P-CH 200V 26A TO247
1+
$6.1225
5+
$5.7824
10+
$5.4423
Quantity
1,300 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-3
TO-247 (IXTH)
P-Channel
-
MOSFET (Metal Oxide)
-
26A (Tc)
4V @ 250µA
PolarP™
200 V
10V
170mOhm @ 13A, 10V
56 nC @ 10 V
±20V
2740 pF @ 25 V
300W (Tc)
-
IXTH20P50P
MOSFET P-CH 500V 20A TO247
1+
$76.0563
5+
$71.8310
10+
$67.6056
Quantity
796 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247 (IXTH)
P-Channel
-
MOSFET (Metal Oxide)
-
20A (Tc)
4V @ 250µA
PolarP™
500 V
10V
450mOhm @ 10A, 10V
103 nC @ 10 V
±20V
5120 pF @ 25 V
460W (Tc)
-
IXTK32P60P
MOSFET P-CH 600V 32A TO264
1+
$96.3380
5+
$90.9859
10+
$85.6338
Quantity
175 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-264-3, TO-264AA
TO-264 (IXTK)
P-Channel
-
MOSFET (Metal Oxide)
-
32A (Tc)
4V @ 1mA
PolarP™
600 V
10V
350mOhm @ 16A, 10V
196 nC @ 10 V
±20V
11100 pF @ 25 V
890W (Tc)
-
IXTR16P60P
MOSFET P-CH 600V 10A ISOPLUS247
1+
$17.4575
5+
$16.4876
10+
$15.5177
Quantity
150 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
ISOPLUS247™
P-Channel
-
MOSFET (Metal Oxide)
-
10A (Tc)
4.5V @ 250µA
PolarP™
600 V
10V
790mOhm @ 8A, 10V
92 nC @ 10 V
±20V
5120 pF @ 25 V
190W (Tc)
-
IXTT48P20P
MOSFET P-CH 200V 48A TO268
1+
$27.8873
5+
$26.3380
10+
$24.7887
Quantity
83 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
P-Channel
-
MOSFET (Metal Oxide)
-
48A (Tc)
4.5V @ 250µA
PolarP™
200 V
10V
85mOhm @ 500mA, 10V
103 nC @ 10 V
±20V
5400 pF @ 25 V
462W (Tc)
-
IXTA36P15P
MOSFET P-CH 150V 36A TO263
1+
$9.6338
5+
$9.0986
10+
$8.5634
Quantity
65 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
P-Channel
-
MOSFET (Metal Oxide)
-
36A (Tc)
4.5V @ 250µA
PolarP™
150 V
10V
110mOhm @ 18A, 10V
55 nC @ 10 V
±20V
3100 pF @ 25 V
300W (Tc)
-
IXTK90P20P
MOSFET P-CH 200V 90A TO264
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
47 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-264-3, TO-264AA
TO-264 (IXTK)
P-Channel
-
MOSFET (Metal Oxide)
-
90A (Tc)
4V @ 1mA
PolarP™
200 V
10V
44mOhm @ 500mA, 10V
205 nC @ 10 V
±20V
12000 pF @ 25 V
890W (Tc)
-
IXTQ52P10P
MOSFET P-CH 100V 52A TO3P
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
21 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-3P-3, SC-65-3
TO-3P
P-Channel
-
MOSFET (Metal Oxide)
-
52A (Tc)
4.5V @ 250µA
PolarP™
100 V
10V
50mOhm @ 52A, 10V
60 nC @ 10 V
±20V
2845 pF @ 25 V
300W (Tc)
-
IXTR170P10P
MOSFET P-CH 100V 108A ISOPLUS247
1+
$30.4225
5+
$28.7324
10+
$27.0423
Quantity
20 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
ISOPLUS247™
P-Channel
-
MOSFET (Metal Oxide)
-
108A (Tc)
4V @ 1mA
PolarP™
100 V
10V
13mOhm @ 85A, 10V
240 nC @ 10 V
±20V
12600 pF @ 25 V
312W (Tc)
-
IXTQ36P15P
MOSFET P-CH 150V 36A TO3P
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-3P-3, SC-65-3
TO-3P
P-Channel
-
MOSFET (Metal Oxide)
-
36A (Tc)
4.5V @ 250µA
PolarP™
150 V
10V
110mOhm @ 18A, 10V
55 nC @ 10 V
±20V
3100 pF @ 25 V
300W (Tc)
-
IXTQ26P20P
MOSFET P-CH 200V 26A TO3P
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-3P-3, SC-65-3
TO-3P
P-Channel
-
MOSFET (Metal Oxide)
-
26A (Tc)
4V @ 250µA
PolarP™
200 V
10V
170mOhm @ 13A, 10V
56 nC @ 10 V
±20V
2740 pF @ 25 V
300W (Tc)
-
IXTA52P10P-TRL
MOSFET P-CH 100V 52A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
P-Channel
-
MOSFET (Metal Oxide)
-
52A (Tc)
4V @ 250µA
PolarP™
100 V
10V
50mOhm @ 26A, 10V
60 nC @ 10 V
±20V
2845 pF @ 25 V
300W (Tc)
-
IXTT90P10P
MOSFET P-CH 100V 90A TO268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
P-Channel
-
MOSFET (Metal Oxide)
-
90A (Tc)
4V @ 250µA
PolarP™
100 V
10V
25mOhm @ 45A, 10V
120 nC @ 10 V
±20V
5800 pF @ 25 V
462W (Tc)
-
IXTH36P15P
MOSFET P-CH 150V 36A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247 (IXTH)
P-Channel
-
MOSFET (Metal Oxide)
-
36A (Tc)
4.5V @ 250µA
PolarP™
150 V
10V
110mOhm @ 18A, 10V
55 nC @ 10 V
±20V
3100 pF @ 25 V
300W (Tc)
-
IXTR36P15P
MOSFET P-CH 150V 22A ISOPLUS247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-3
ISOPLUS247™
P-Channel
-
MOSFET (Metal Oxide)
-
22A (Tc)
5V @ 250µA
PolarP™
150 V
10V
120mOhm @ 18A, 10V
55 nC @ 10 V
±20V
2950 pF @ 25 V
150W (Tc)
-
IXTH52P10P
MOSFET P-CH 100V 52A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247 (IXTH)
P-Channel
-
MOSFET (Metal Oxide)
-
52A (Tc)
4.5V @ 250µA
PolarP™
100 V
10V
50mOhm @ 52A, 10V
60 nC @ 10 V
±20V
2845 pF @ 25 V
300W (Tc)
-
IXTR90P10P
MOSFET P-CH 100V 57A ISOPLUS247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
ISOPLUS247™
P-Channel
-
MOSFET (Metal Oxide)
-
57A (Tc)
4V @ 250µA
PolarP™
100 V
10V
27mOhm @ 45A, 10V
120 nC @ 10 V
±20V
5800 pF @ 25 V
190W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.