e-GaN® Series, Single FETs, MOSFETs

Results:
7
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Current - Continuous Drain (Id) @ 25°C
Drain to Source Voltage (Vdss)
Vgs (Max)
Technology
Operating Temperature
FET Feature
FET Type
Grade
Mounting Type
Supplier Device Package
Power Dissipation (Max)
Qualification
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Results remaining7
Applied Filters:
e-GaN®
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureSupplier Device PackagePackage / CaseFET TypeDrain to Source Voltage (Vdss)GradeFET FeatureGate Charge (Qg) (Max) @ VgsTechnologyCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Power Dissipation (Max)QualificationSeriesInput Capacitance (Ciss) (Max) @ VdsRds On (Max) @ Id, VgsVgs(th) (Max) @ IdVgs (Max)
EPC7014UBC
GAN FET HEMT 60V 1A COTS 4UB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
4-SMD
4-SMD, No Lead
N-Channel
60 V
-
-
-
GaNFET (Gallium Nitride)
1A (Tc)
5V
-
-
e-GaN®
22 pF @ 30 V
580mOhm @ 1A, 5V
2.5V @ 140µA
+7V, -4V
FBG04N08ASH
GAN FET HEMT 40V 8A 4FSMD-A
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
4-SMD
4-SMD, No Lead
N-Channel
40 V
-
-
2.8 nC @ 5 V
GaNFET (Gallium Nitride)
8A (Tc)
5V
-
-
e-GaN®
312 pF @ 20 V
24mOhm @ 8A, 5V
2.5V @ 2mA
+6V, -4V
FBG20N04ASH
GAN FET HEMT 200V 4A 4FSMD-A
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
4-SMD
4-SMD, No Lead
N-Channel
200 V
-
-
3 nC @ 5 V
GaNFET (Gallium Nitride)
4A (Tc)
5V
-
-
e-GaN®
150 pF @ 100 V
130mOhm @ 4A, 5V
2.8V @ 1mA
+6V, -4V
EPC7007BC
GAN FET HEMT200V18A COTS 4FSMD-B
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
4-SMD
4-SMD, No Lead
N-Channel
200 V
-
-
5.4 nC @ 5 V
MOSFET (Metal Oxide)
18A (Tc)
5V
-
-
e-GaN®
525 pF @ 100 V
28mOhm @ 18A, 5V
2.5V @ 3mA
+6V, -4V
EPC7014UBSH
GAN FET HEMT 60V 1A 4UB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
4-SMD
4-SMD, No Lead
N-Channel
60 V
-
-
-
GaNFET (Gallium Nitride)
1A (Tc)
5V
-
-
e-GaN®
22 pF @ 30 V
580mOhm @ 1A, 5V
2.5V @ 140µA
-
FBG20N18BSH
GAN FET HEMT 200V 18A 4FSMD-B
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
4-SMD
4-SMD, No Lead
N-Channel
200 V
-
-
7 nC @ 5 V
GaNFET (Gallium Nitride)
18A (Tc)
5V
-
-
e-GaN®
900 pF @ 100 V
28mOhm @ 18A, 5V
2.5V @ 3mA
+6V, -4V
FBG04N30BSH
GAN FET HEMT 40V 30A 4FSMD-B
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
4-SMD
4-SMD, No Lead
N-Channel
40 V
-
-
11.4 nC @ 5 V
GaNFET (Gallium Nitride)
30A (Tc)
5V
-
-
e-GaN®
1300 pF @ 20 V
9mOhm @ 30A, 5V
2.5V @ 9mA
+6V, -4V

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.