U-MOSVII-H Series, Single FETs, MOSFETs

Results:
40
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Power Dissipation (Max)
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Vgs (Max)
Grade
Qualification
FET Feature
FET Type
Mounting Type
Technology
Results remaining40
Applied Filters:
U-MOSVII-H
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseSupplier Device PackageFET TypeOperating TemperatureDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdSeriesDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
T2N7002AK,LM
1+
$0.0254
5+
$0.0239
10+
$0.0225
Quantity
225,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
N-Channel
150°C (TJ)
60 V
-
MOSFET (Metal Oxide)
-
200mA (Ta)
3.9Ohm @ 100mA, 10V
2.1V @ 250µA
U-MOSVII-H
4.5V, 10V
0.35 nC @ 4.5 V
±20V
17 pF @ 10 V
320mW (Ta)
-
SSM3K72KCT,L3F
1+
$0.1268
5+
$0.1197
10+
$0.1127
Quantity
88,102 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
SC-101, SOT-883
CST3
N-Channel
-55°C ~ 150°C (TJ)
60 V
-
MOSFET (Metal Oxide)
-
400mA (Ta)
1.5Ohm @ 100mA, 10V
2.1V @ 250µA
U-MOSVII-H
4.5V, 10V
0.6 nC @ 4.5 V
±20V
40 pF @ 10 V
500mW (Ta)
-
SSM3K7002CFU,LF
1+
$0.0963
5+
$0.0910
10+
$0.0856
Quantity
55,885 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
SC-70, SOT-323
USM
N-Channel
150°C (TJ)
60 V
-
MOSFET (Metal Oxide)
-
170mA (Ta)
3.9Ohm @ 100mA, 10V
2.1V @ 250µA
U-MOSVII-H
4.5V, 10V
0.35 nC @ 4.5 V
±20V
17 pF @ 10 V
150mW (Ta)
-
SSM3K339R,LF
1+
$0.1014
5+
$0.0958
10+
$0.0901
Quantity
12,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-3 Flat Leads
SOT-23F
N-Channel
150°C (TJ)
40 V
-
MOSFET (Metal Oxide)
-
2A (Ta)
185mOhm @ 1A, 8V
1.2V @ 1mA
U-MOSVII-H
1.8V, 8V
1.1 nC @ 4.2 V
±12V
130 pF @ 10 V
1W (Ta)
-
T2N7002BK,LM
1+
$0.0254
5+
$0.0239
10+
$0.0225
Quantity
3,985 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
N-Channel
150°C (TJ)
60 V
-
MOSFET (Metal Oxide)
-
400mA (Ta)
1.5Ohm @ 100mA, 10V
2.1V @ 250µA
U-MOSVII-H
4.5V, 10V
0.6 nC @ 4.5 V
±20V
40 pF @ 10 V
320mW (Ta)
-
SSM3K324R,LF
1+
$0.0634
5+
$0.0599
10+
$0.0563
Quantity
2,840 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-3 Flat Leads
SOT-23F
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
4A (Ta)
55mOhm @ 4A, 4.5V
-
U-MOSVII-H
1.8V, 4.5V
-
±12V
190 pF @ 30 V
1W (Ta)
-
TPC8066-H,LQ(S
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
11A (Ta)
16mOhm @ 5.5A, 10V
2.3V @ 100µA
U-MOSVII-H
4.5V, 10V
15 nC @ 10 V
±20V
1100 pF @ 10 V
1W (Ta)
-
TPC8067-H,LQ(S
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
9A (Ta)
25mOhm @ 4.5A, 10V
2.3V @ 100µA
U-MOSVII-H
4.5V, 10V
9.5 nC @ 10 V
±20V
690 pF @ 10 V
1W (Ta)
-
TPCA8056-H,LQ(M
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
8-SOP Advance (5x5)
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
48A (Ta)
2.2mOhm @ 24A, 10V
2.3V @ 1mA
U-MOSVII-H
4.5V, 10V
74 nC @ 10 V
±20V
6200 pF @ 10 V
1.6W (Ta), 63W (Tc)
-
TPCA8062-H,LQ(CM
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
8-SOP Advance (5x5)
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
28A (Ta)
5.6mOhm @ 14A, 10V
2.3V @ 300µA
U-MOSVII-H
4.5V, 10V
34 nC @ 10 V
±20V
2900 pF @ 10 V
1.6W (Ta), 42W (Tc)
-
TPCA8064-H,LQ(CM
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
8-SOP Advance (5x5)
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
20A (Ta)
8.2mOhm @ 10A, 10V
2.3V @ 200µA
U-MOSVII-H
4.5V, 10V
23 nC @ 10 V
±20V
1900 pF @ 10 V
1.6W (Ta), 32W (Tc)
-
TPCC8067-H,LQ(S
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
8-TSON Advance (3.1x3.1)
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
9A (Ta)
25mOhm @ 4.5A, 10V
2.3V @ 100µA
U-MOSVII-H
4.5V, 10V
9.5 nC @ 10 V
±20V
690 pF @ 10 V
700mW (Ta), 15W (Tc)
-
TPC8062-H,LQ(CM
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
18A (Ta)
5.8mOhm @ 9A, 10V
2.3V @ 300µA
U-MOSVII-H
4.5V, 10V
34 nC @ 10 V
±20V
2900 pF @ 10 V
1W (Ta)
-
TPCA8055-H,LQ(M
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
8-SOP Advance (5x5)
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
56A (Ta)
1.9mOhm @ 28A, 10V
2.3V @ 1mA
U-MOSVII-H
4.5V, 10V
91 nC @ 10 V
±20V
7700 pF @ 10 V
1.6W (Ta), 70W (Tc)
-
TPCA8057-H,LQ(M
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
8-SOP Advance (5x5)
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
42A (Ta)
2.6mOhm @ 21A, 10V
2.3V @ 500µA
U-MOSVII-H
4.5V, 10V
61 nC @ 10 V
±20V
5200 pF @ 10 V
1.6W (Ta), 57W (Tc)
-
TPCA8065-H,LQ(S
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
8-SOP Advance (5x5)
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
16A (Ta)
11.4mOhm @ 8A, 10V
2.3V @ 200µA
U-MOSVII-H
4.5V, 10V
20 nC @ 10 V
±20V
1600 pF @ 10 V
1.6W (Ta), 25W (Tc)
-
TPCC8065-H,LQ(S
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
8-TSON Advance (3.1x3.1)
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
13A (Ta)
11.4mOhm @ 6.5A, 10V
2.3V @ 200µA
U-MOSVII-H
4.5V, 10V
20 nC @ 10 V
±20V
1350 pF @ 10 V
700mW (Ta), 18W (Tc)
-
TPCC8066-H,LQ(S
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
8-TSON Advance (3.1x3.1)
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
11A (Ta)
15mOhm @ 5.5A, 10V
2.3V @ 100µA
U-MOSVII-H
4.5V, 10V
15 nC @ 10 V
±20V
1100 pF @ 10 V
700mW (Ta), 17W (Tc)
-
TPC8065-H,LQ(S
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
13A (Ta)
11.6mOhm @ 6.5A, 10V
2.3V @ 200µA
U-MOSVII-H
4.5V, 10V
20 nC @ 10 V
±20V
1350 pF @ 10 V
1W (Ta)
-
SSM3K7002KF,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
N-Channel
-55°C ~ 150°C (TJ)
60 V
-
MOSFET (Metal Oxide)
-
400mA (Ta)
1.5Ohm @ 100mA, 10V
2.1V @ 250µA
U-MOSVII-H
4.5V, 10V
0.6 nC @ 4.5 V
±20V
40 pF @ 10 V
270mW (Ta)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.