OptiMOS™3 Series, Single FETs, MOSFETs

Results:
11
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Mounting Type
FET Type
Technology
Vgs (Max)
FET Feature
Grade
Qualification
Results remaining11
Applied Filters:
OptiMOS™3
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeSupplier Device PackageOperating TemperaturePackage / CaseTechnologyFET TypeInput Capacitance (Ciss) (Max) @ VdsGradeSeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On, Min Rds On)Vgs (Max)Drain to Source Voltage (Vdss)Power Dissipation (Max)Qualification
IPP023N04NGHKSA1
MOSFET N-CH 40V 90A TO220-3
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Quantity
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PCB Symbol, Footprint & 3D Model
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OptiMOS™3
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IPP041N04NGHKSA1
MOSFET N-CH 40V 80A TO220-3
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Quantity
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PCB Symbol, Footprint & 3D Model
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OptiMOS™3
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80A (Tc)
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IPB136N08N3GATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
PG-TO263-3
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
N-Channel
1730 pF @ 40 V
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OptiMOS™3
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45A (Tc)
13.9mOhm @ 45A, 10V
3.5V @ 33µA
25 nC @ 10 V
6V, 10V
±20V
80 V
79W (Tc)
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IPA126N10NM3SXKSA1
MOSFET N-CH 100V 39A TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
PG-TO220 Full Pack
-55°C ~ 175°C (TJ)
TO-220-3 Full Pack
MOSFET (Metal Oxide)
N-Channel
2500 pF @ 50 V
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OptiMOS™3
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35A (Tc)
12.6mOhm @ 35A, 10V
3.5V @ 45µA
35 nC @ 10 V
6V, 10V
±20V
100 V
33W (Tc)
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IPA320N20NM3SXKSA1
MOSFET N-CH 200V 26A TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
PG-TO220 Full Pack
-55°C ~ 175°C (TJ)
TO-220-3 Full Pack
MOSFET (Metal Oxide)
N-Channel
2300 pF @ 100 V
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OptiMOS™3
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26A (Tc)
32mOhm @ 26A, 10V
4V @ 89µA
30 nC @ 10 V
10V
±20V
200 V
38W (Tc)
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IPA075N15N3
N-CHANNEL POWER MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
PG-TO220-3-111
-55°C ~ 175°C (TJ)
TO-220-3 Full Pack
MOSFET (Metal Oxide)
N-Channel
7280 pF @ 75 V
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OptiMOS™3
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43A (Tc)
7.5mOhm @ 43A, 10V
4V @ 270µA
93 nC @ 10 V
8V, 10V
±20V
150 V
39W (Tc)
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BSC119N03MSCG
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
PG-TDSON-8
-55°C ~ 150°C (TJ)
8-PowerTDFN
MOSFET (Metal Oxide)
N-Channel
1500 pF @ 15 V
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OptiMOS™3
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11A (Ta), 39A (Tc)
11.9mOhm @ 30A, 10V
2V @ 250µA
20 nC @ 10 V
4.5V, 10V
±20V
30 V
2.5W (Ta), 28W (Tc)
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BSF024N03LT3G
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
MG-WDSON-2
-40°C ~ 150°C (TJ)
DirectFET™ Isometric MX
MOSFET (Metal Oxide)
N-Channel
5500 pF @ 15 V
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OptiMOS™3
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15A (Ta), 106A (Tc)
2.4mOhm @ 20A, 10V
2.2V @ 250µA
71 nC @ 10 V
4.5V, 10V
±20V
30 V
2.2W (Ta), 42W (Tc)
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IPA600N25NM3SXKSA1
MOSFET N-CH 250V 15A TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
PG-TO220 Full Pack
-55°C ~ 175°C (TJ)
TO-220-3 Full Pack
MOSFET (Metal Oxide)
N-Channel
2300 pF @ 100 V
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OptiMOS™3
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15A (Tc)
60mOhm @ 15A, 10V
4V @ 89µA
29 nC @ 10 V
10V
±20V
250 V
38W (Tc)
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IPB034N06N3GATMA2
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
PG-TO263-7-3
-55°C ~ 175°C (TJ)
TO-263-7, D²Pak (6 Leads + Tab)
MOSFET (Metal Oxide)
N-Channel
11000 pF @ 30 V
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OptiMOS™3
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100A (Tc)
3.4mOhm @ 100A, 10V
4V @ 93µA
130 nC @ 10 V
10V
±20V
60 V
167W (Tc)
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IPC300N20N3X7SA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
Die
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Die
MOSFET (Metal Oxide)
N-Channel
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OptiMOS™3
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100mOhm @ 2A, 10V
4V @ 270µA
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10V
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200 V
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About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.