DTMOSIV-H Series, Single FETs, MOSFETs

Results:
13
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Package / Case
Operating Temperature
Mounting Type
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining13
Applied Filters:
DTMOSIV-H
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperatureGradeTechnologyFET FeatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackagePackage / CaseQualification
TK31V60X,LQ
1+
$10.1408
5+
$9.5775
10+
$9.0141
Quantity
28 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
30.8A (Ta)
10V
98mOhm @ 9.4A, 10V
3.5V @ 1.5mA
65 nC @ 10 V
±30V
3000 pF @ 300 V
240W (Tc)
4-DFN-EP (8x8)
4-VSFN Exposed Pad
-
TK31E60X,S1X
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
30.8A (Ta)
10V
88mOhm @ 9.4A, 10V
3.5V @ 1.5mA
65 nC @ 10 V
±30V
3000 pF @ 300 V
230W (Tc)
TO-220
TO-220-3
-
TK25N60X5,S1F
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
25A (Ta)
10V
140mOhm @ 7.5A, 10V
4.5V @ 1.2mA
60 nC @ 10 V
±30V
2400 pF @ 300 V
180W (Tc)
TO-247
TO-247-3
-
TK25V60X,LQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
25A (Ta)
10V
135mOhm @ 7.5A, 10V
3.5V @ 1.2mA
40 nC @ 10 V
±30V
2400 pF @ 300 V
180W (Tc)
4-DFN-EP (8x8)
4-VSFN Exposed Pad
-
TK62N60X,S1F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
61.8A (Ta)
10V
40mOhm @ 21A, 10V
3.5V @ 3.1mA
135 nC @ 10 V
±30V
6500 pF @ 300 V
400W (Tc)
TO-247
TO-247-3
-
TK22V65X5,LQ
PB-F POWER MOSFET TRANSISTOR DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
650 V
22A (Ta)
10V
170mOhm @ 11A, 10V
4.5V @ 1.1mA
50 nC @ 10 V
±30V
2400 pF @ 300 V
180W (Tc)
4-DFN-EP (8x8)
4-VSFN Exposed Pad
-
TK39N60X,S1F
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
38.8A (Ta)
10V
65mOhm @ 12.5A, 10V
3.5V @ 1.9mA
85 nC @ 10 V
±30V
4100 pF @ 300 V
270W (Tc)
TO-247
TO-247-3
-
TK25N60X,S1F
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
25A (Ta)
10V
125mOhm @ 7.5A, 10V
3.5V @ 1.2mA
40 nC @ 10 V
±30V
2400 pF @ 300 V
180W (Tc)
TO-247
TO-247-3
-
TK31N60X,S1F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
30.8A (Ta)
10V
88mOhm @ 9.4A, 10V
3.5V @ 1.5mA
65 nC @ 10 V
±30V
3000 pF @ 300 V
230W (Tc)
TO-247
TO-247-3
-
TK25E60X5,S1X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
25A (Ta)
10V
140mOhm @ 7.5A, 10V
4.5V @ 1.2mA
60 nC @ 10 V
±30V
2400 pF @ 300 V
180W (Tc)
TO-220
TO-220-3
-
TK25A60X,S5X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
25A (Ta)
10V
125mOhm @ 7.5A, 10V
3.5V @ 1.2mA
40 nC @ 10 V
±30V
2400 pF @ 300 V
45W (Tc)
TO-220SIS
TO-220-3 Full Pack
-
TK25E60X,S1X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
25A (Ta)
10V
125mOhm @ 7.5A, 10V
3.5V @ 1.2mA
40 nC @ 10 V
±30V
2400 pF @ 300 V
180W (Tc)
TO-220
TO-220-3
-
TK25A60X5,S5X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
-
MOSFET (Metal Oxide)
-
DTMOSIV-H
600 V
25A (Ta)
10V
140mOhm @ 7.5A, 10V
4.5V @ 1.2mA
60 nC @ 10 V
±30V
2400 pF @ 300 V
45W (Tc)
TO-220SIS
TO-220-3 Full Pack
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.