HiPerFET™, PolarP2™ Series, Single FETs, MOSFETs

Results:
16
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Supplier Device Package
Power Dissipation (Max)
Package / Case
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Mounting Type
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining16
Applied Filters:
HiPerFET™, PolarP2™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeGradePackage / CaseTechnologyFET FeatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
IXFK94N50P2
MOSFET N-CH 500V 94A TO264AA
1+
$10.3944
5+
$9.8169
10+
$9.2394
Quantity
8,117 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-264-3, TO-264AA
MOSFET (Metal Oxide)
-
HiPerFET™, PolarP2™
500 V
94A (Tc)
10V
55mOhm @ 500mA, 10V
5V @ 8mA
220 nC @ 10 V
±30V
13700 pF @ 25 V
1300W (Tc)
TO-264AA (IXFK)
-
IXFX94N50P2
MOSFET N-CH 500V 94A PLUS247-3
1+
$8.6197
5+
$8.1408
10+
$7.6620
Quantity
520 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3 Variant
MOSFET (Metal Oxide)
-
HiPerFET™, PolarP2™
500 V
94A (Tc)
10V
55mOhm @ 500mA, 10V
5V @ 8mA
220 nC @ 10 V
±30V
13700 pF @ 25 V
1300W (Tc)
PLUS247™-3
-
IXFK74N50P2
MOSFET N-CH 500V 74A TO264AA
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Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-264-3, TO-264AA
MOSFET (Metal Oxide)
-
HiPerFET™, PolarP2™
500 V
74A (Tc)
10V
77mOhm @ 500mA, 10V
5V @ 4mA
165 nC @ 10 V
±30V
9900 pF @ 25 V
1400W (Tc)
TO-264AA (IXFK)
-
IXFH52N50P2
MOSFET N-CH 500V 52A TO247AD
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Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
-
HiPerFET™, PolarP2™
500 V
52A (Tc)
10V
120mOhm @ 26A, 10V
4.5V @ 4mA
113 nC @ 10 V
±30V
6800 pF @ 25 V
960W (Tc)
TO-247AD (IXFH)
-
IXFQ24N50P2
MOSFET N-CH 500V 24A TO3P
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-3P-3, SC-65-3
MOSFET (Metal Oxide)
-
HiPerFET™, PolarP2™
500 V
24A (Tc)
10V
270mOhm @ 500mA, 10V
4.5V @ 1mA
48 nC @ 10 V
±30V
2890 pF @ 25 V
480W (Tc)
TO-3P
-
IXFT42N50P2
MOSFET N-CH 500V 42A TO268
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
MOSFET (Metal Oxide)
-
HiPerFET™, PolarP2™
500 V
42A (Tc)
10V
145mOhm @ 500mA, 10V
4.5V @ 4mA
92 nC @ 10 V
±30V
5300 pF @ 25 V
830W (Tc)
TO-268AA
-
IXFT52N50P2
MOSFET N-CH 500V 52A TO268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
MOSFET (Metal Oxide)
-
HiPerFET™, PolarP2™
500 V
52A (Tc)
10V
120mOhm @ 26A, 10V
4.5V @ 4mA
113 nC @ 10 V
±30V
6800 pF @ 25 V
960W (Tc)
TO-268AA
-
IXFV15N100P
MOSFET N-CH 1000V 15A PLUS220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3, Short Tab
MOSFET (Metal Oxide)
-
HiPerFET™, PolarP2™
1000 V
15A (Tc)
10V
760mOhm @ 500mA, 10V
6.5V @ 1mA
97 nC @ 10 V
±30V
5140 pF @ 25 V
543W (Tc)
PLUS220
-
IXFV36N50P
MOSFET N-CH 500V 36A PLUS220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3, Short Tab
MOSFET (Metal Oxide)
-
HiPerFET™, PolarP2™
500 V
36A (Tc)
10V
170mOhm @ 500mA, 10V
5V @ 4mA
93 nC @ 10 V
±30V
5500 pF @ 25 V
540W (Tc)
PLUS220
-
IXFV12N120P
MOSFET N-CH 1200V 12A PLUS220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3, Short Tab
MOSFET (Metal Oxide)
-
HiPerFET™, PolarP2™
1200 V
12A (Tc)
10V
1.35Ohm @ 500mA, 10V
6.5V @ 1mA
103 nC @ 10 V
±30V
5400 pF @ 25 V
543W (Tc)
PLUS220
-
IXFV12N120PS
MOSFET N-CH 1200V 12A PLUS220SMD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
PLUS-220SMD
MOSFET (Metal Oxide)
-
HiPerFET™, PolarP2™
1200 V
12A (Tc)
10V
1.35Ohm @ 500mA, 10V
6.5V @ 1mA
103 nC @ 10 V
±30V
5400 pF @ 25 V
543W (Tc)
PLUS-220SMD
-
IXFN94N50P2
MOSFET N-CH 500V 68A SOT227B
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
-
SOT-227-4, miniBLOC
MOSFET (Metal Oxide)
-
HiPerFET™, PolarP2™
500 V
68A (Tc)
10V
55mOhm @ 500mA, 10V
5V @ 8mA
220 nC @ 10 V
±30V
13700 pF @ 25 V
780W (Tc)
SOT-227B
-
IXFH42N50P2
MOSFET N-CH 500V 42A TO247AD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
-
HiPerFET™, PolarP2™
500 V
42A (Tc)
10V
145mOhm @ 500mA, 10V
4.5V @ 4mA
92 nC @ 10 V
±30V
5300 pF @ 25 V
830W (Tc)
TO-247AD (IXFH)
-
IXFV15N100PS
MOSFET N-CH 1000V 15A PLUS220SMD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
PLUS-220SMD
MOSFET (Metal Oxide)
-
HiPerFET™, PolarP2™
1000 V
15A (Tc)
10V
760mOhm @ 500mA, 10V
6.5V @ 1mA
97 nC @ 10 V
±30V
5140 pF @ 25 V
543W (Tc)
PLUS-220SMD
-
MMIX1F40N110P
MOSFET N-CH 1100V 24A 24SMPD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
24-PowerSMD, 21 Leads
MOSFET (Metal Oxide)
-
HiPerFET™, PolarP2™
1100 V
24A (Tc)
10V
290mOhm @ 20A, 10V
6.5V @ 1mA
310 nC @ 10 V
±30V
19000 pF @ 25 V
500W (Tc)
24-SMPD
-
IXFV36N50PS
MOSFET N-CH 500V 36A PLUS-220SMD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
PLUS-220SMD
MOSFET (Metal Oxide)
-
HiPerFET™, PolarP2™
500 V
36A (Tc)
10V
170mOhm @ 500mA, 10V
5V @ 4mA
93 nC @ 10 V
±30V
5500 pF @ 25 V
540W (Tc)
PLUS-220SMD
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.