E Series, Single FETs, MOSFETs

Results:
201
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Operating Temperature
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Grade
Mounting Type
Qualification
Technology
FET Feature
FET Type
Results remaining201
Applied Filters:
E
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeSeriesPackage / CaseGradeSupplier Device PackageTechnologyFET FeatureVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SIHD2N80E-GE3
MOSFET N-CH 800V 2.8A DPAK
1+
$0.8873
5+
$0.8380
10+
$0.7887
Quantity
16,844 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
E
TO-252-3, DPak (2 Leads + Tab), SC-63
-
TO-252AA
MOSFET (Metal Oxide)
-
4V @ 250µA
800 V
2.8A (Tc)
10V
2.75Ohm @ 1A, 10V
19.6 nC @ 10 V
±30V
315 pF @ 100 V
62.5W (Tc)
-
SIHB33N60ET1-GE3
MOSFET N-CH 600V 33A TO263
1+
$5.5775
5+
$5.2676
10+
$4.9577
Quantity
14,327 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
E
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
4V @ 250µA
600 V
33A (Tc)
10V
99mOhm @ 16.5A, 10V
150 nC @ 10 V
±30V
3508 pF @ 100 V
278W (Tc)
-
SIHD6N80E-GE3
MOSFET N-CH 800V 5.4A DPAK
1+
$20.2817
5+
$19.1549
10+
$18.0282
Quantity
13,199 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
E
TO-252-3, DPak (2 Leads + Tab), SC-63
-
TO-252AA
MOSFET (Metal Oxide)
-
4V @ 250µA
800 V
5.4A (Tc)
10V
940mOhm @ 3A, 10V
44 nC @ 10 V
±30V
827 pF @ 100 V
78W (Tc)
-
SIHP22N60E-GE3
MOSFET N-CH 600V 21A TO220AB
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
9,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
E
TO-220-3
-
-
MOSFET (Metal Oxide)
-
4V @ 250µA
600 V
21A (Tc)
10V
180mOhm @ 11A, 10V
86 nC @ 10 V
±30V
1920 pF @ 100 V
227W (Tc)
-
SIHP17N80E-GE3
MOSFET N-CH 800V 15A TO220AB
1+
$4.9437
5+
$4.6690
10+
$4.3944
Quantity
7,265 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
E
TO-220-3
-
TO-220AB
MOSFET (Metal Oxide)
-
4V @ 250µA
800 V
15A (Tc)
10V
290mOhm @ 8.5A, 10V
122 nC @ 10 V
±30V
2408 pF @ 100 V
208W (Tc)
-
SIHJ10N60E-T1-GE3
MOSFET N-CH 600V 10A PPAK SO-8
1+
$1.7189
5+
$1.6234
10+
$1.5279
Quantity
5,615 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
E
PowerPAK® SO-8
-
PowerPAK® SO-8
MOSFET (Metal Oxide)
-
4.5V @ 250µA
600 V
10A (Tc)
10V
360mOhm @ 5A, 10V
50 nC @ 10 V
±30V
784 pF @ 100 V
89W (Tc)
-
SIHF30N60E-GE3
MOSFET N-CH 600V 29A TO220
1+
$7.0986
5+
$6.7042
10+
$6.3099
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
E
TO-220-3 Full Pack
-
-
MOSFET (Metal Oxide)
-
4V @ 250µA
600 V
29A (Tc)
10V
125mOhm @ 15A, 10V
130 nC @ 10 V
±30V
2600 pF @ 100 V
37W (Tc)
-
SIHH27N60EF-T1-GE3
MOSFET N-CH 600V 29A PPAK 8 X 8
1+
$50.1972
5+
$47.4085
10+
$44.6197
Quantity
2,965 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
E
8-PowerTDFN
-
PowerPAK® 8 x 8
MOSFET (Metal Oxide)
-
4V @ 250µA
600 V
29A (Tc)
10V
100mOhm @ 13.5A, 10V
135 nC @ 10 V
±30V
2609 pF @ 100 V
202W (Tc)
-
SIHB22N60ET1-GE3
MOSFET N-CH 600V 21A TO263
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
2,700 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
E
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
4V @ 250µA
600 V
21A (Tc)
10V
180mOhm @ 11A, 10V
86 nC @ 10 V
±30V
1920 pF @ 100 V
227W (Tc)
-
SIHB12N60ET1-GE3
MOSFET N-CH 600V 12A TO263
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
2,400 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
E
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
4V @ 250µA
600 V
12A (Tc)
10V
380mOhm @ 6A, 10V
58 nC @ 10 V
±30V
937 pF @ 100 V
147W (Tc)
-
SIHG180N60E-GE3
MOSFET N-CH 600V 19A TO247AC
1+
$3.2958
5+
$3.1127
10+
$2.9296
Quantity
1,179 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
E
TO-247-3
-
TO-247AC
MOSFET (Metal Oxide)
-
5V @ 250µA
600 V
19A (Tc)
10V
180mOhm @ 9.5A, 10V
33 nC @ 10 V
±30V
1085 pF @ 100 V
156W (Tc)
-
SIHP12N60E-GE3
MOSFET N-CH 600V 12A TO220AB
1+
$15.2113
5+
$14.3662
10+
$13.5211
Quantity
1,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
E
TO-220-3
-
TO-220AB
MOSFET (Metal Oxide)
-
4V @ 250µA
600 V
12A (Tc)
10V
380mOhm @ 6A, 10V
58 nC @ 10 V
±30V
937 pF @ 100 V
147W (Tc)
-
SIHP14N60E-BE3
1+
$2.6721
5+
$2.5237
10+
$2.3752
Quantity
978 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
E
TO-220-3
-
TO-220AB
MOSFET (Metal Oxide)
-
4V @ 250µA
600 V
13A (Tc)
10V
309mOhm @ 7A, 10V
64 nC @ 10 V
±30V
1205 pF @ 100 V
147W (Tc)
-
SIHP30N60E-GE3
MOSFET N-CH 600V 29A TO220AB
1+
$7.3521
5+
$6.9437
10+
$6.5352
Quantity
950 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
E
TO-220-3
-
-
MOSFET (Metal Oxide)
-
4V @ 250µA
600 V
29A (Tc)
10V
125mOhm @ 15A, 10V
130 nC @ 10 V
±30V
2600 pF @ 100 V
250W (Tc)
-
SIHG47N60AE-GE3
MOSFET N-CH 600V 43A TO247AC
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
E
TO-247-3
-
TO-247AC
MOSFET (Metal Oxide)
-
4V @ 250µA
600 V
43A (Tc)
10V
65mOhm @ 24A, 10V
182 nC @ 10 V
±30V
3600 pF @ 100 V
313W (Tc)
-
SIHP4N80E-GE3
MOSFET N-CH 800V 4.3A TO220AB
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
50 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
E
TO-220-3
-
TO-220AB
MOSFET (Metal Oxide)
-
4V @ 250µA
800 V
4.3A (Tc)
10V
1.27Ohm @ 2A, 10V
32 nC @ 10 V
±30V
622 pF @ 100 V
69W (Tc)
-
SIHG11N80AE-GE3
MOSFET N-CH 800V 8A TO247AC
1+
$3.1690
5+
$2.9930
10+
$2.8169
Quantity
49 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
E
TO-247-3
-
TO-247AC
MOSFET (Metal Oxide)
-
4V @ 250µA
800 V
8A (Tc)
10V
450mOhm @ 5.5A, 10V
42 nC @ 10 V
±30V
804 pF @ 100 V
78W (Tc)
-
E3M0045065K
SIC, MOSFET, 45M, 650V, TO-247-4
1+
$26.1127
5+
$24.6620
10+
$23.2113
Quantity
40 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
N-Channel
E
TO-247-4
Automotive
TO-247-4L
SiC (Silicon Carbide Junction Transistor)
-
3.6V @ 4.84mA
650 V
46A (Tc)
15V
60mOhm @ 17.6A, 15V
64 nC @ 15 V
+19V, -8V
1593 pF @ 400 V
150W (Tc)
AEC-Q101
SIHD6N80AE-GE3
MOSFET N-CH 800V 5A DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
E
TO-252-3, DPak (2 Leads + Tab), SC-63
-
TO-252AA
MOSFET (Metal Oxide)
-
4V @ 250µA
800 V
5A (Tc)
10V
950mOhm @ 2A, 10V
22.5 nC @ 10 V
±30V
422 pF @ 100 V
62.5W (Tc)
-
SIHF15N60E-GE3
MOSFET N-CH 600V 15A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
E
TO-220-3 Full Pack
-
TO-220 Full Pack
MOSFET (Metal Oxide)
-
4V @ 250µA
600 V
15A (Tc)
10V
280mOhm @ 8A, 10V
78 nC @ 10 V
±30V
1350 pF @ 100 V
34W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.