FRFET® Series, Single FETs, MOSFETs

Results:
32
Manufacturer
Series
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Mounting Type
Vgs(th) (Max) @ Id
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining32
Applied Filters:
FRFET®
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FQPF5N50CFTU
MOSFET N-CH 500V 5A TO220F
1+
$0.2028
5+
$0.1915
10+
$0.1803
Quantity
6,130 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
5A (Tc)
4V @ 250µA
FRFET®
500 V
10V
1.55Ohm @ 2.5A, 10V
24 nC @ 10 V
±30V
625 pF @ 25 V
38W (Tc)
-
FQL40N50F
MOSFET N-CH 500V 40A TO264-3
1+
$11.4085
5+
$10.7746
10+
$10.1408
Quantity
2,530 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
TO-264-3
-
MOSFET (Metal Oxide)
-
40A (Tc)
5V @ 250µA
FRFET®
500 V
10V
110mOhm @ 20A, 10V
200 nC @ 10 V
±30V
7500 pF @ 25 V
460W (Tc)
-
FQPF13N50CF
MOSFET N-CH 500V 13A TO220F
1+
$2.9738
5+
$2.8086
10+
$2.6434
Quantity
1,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
13A (Tc)
4V @ 250µA
FRFET®
500 V
10V
540mOhm @ 6.5A, 10V
56 nC @ 10 V
±30V
2055 pF @ 25 V
48W (Tc)
-
FQPF8N60CFT
MOSFET N-CH 600V 6.26A TO220F
1+
$0.3803
5+
$0.3592
10+
$0.3380
Quantity
293 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
6.26A (Tc)
4V @ 250µA
FRFET®
600 V
10V
1.5Ohm @ 3.13A, 10V
36 nC @ 10 V
±30V
1255 pF @ 25 V
48W (Tc)
-
FQPF11N50CF
POWER FIELD-EFFECT TRANSISTOR, 1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
11A (Tc)
4V @ 250µA
FRFET®
500 V
10V
550mOhm @ 5.5A, 10V
55 nC @ 10 V
±30V
2055 pF @ 25 V
48W (Tc)
-
FQA24N50F_F109
MOSFET N-CH 500V 24A TO3P
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-3P-3, SC-65-3
TO-3P
-
MOSFET (Metal Oxide)
-
24A (Tc)
5V @ 250µA
FRFET®
500 V
10V
200mOhm @ 12A, 10V
120 nC @ 10 V
±30V
4500 pF @ 25 V
290W (Tc)
-
FQB8N60CFTM
MOSFET N-CH 600V 6.26A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-
MOSFET (Metal Oxide)
-
6.26A (Tc)
4V @ 250µA
FRFET®
600 V
10V
1.5Ohm @ 3.13A, 10V
36 nC @ 10 V
±30V
1255 pF @ 25 V
147W (Tc)
-
FQA13N50CF_F109
MOSFET N-CH 500V 15A TO3PN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-3P-3, SC-65-3
TO-3PN
-
MOSFET (Metal Oxide)
-
15A (Tc)
4V @ 250µA
FRFET®
500 V
10V
480mOhm @ 7.5A, 10V
56 nC @ 10 V
±30V
2055 pF @ 25 V
218W (Tc)
-
FQB9N50CFTM_WS
MOSFET N-CH 500V 9A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-
MOSFET (Metal Oxide)
-
9A (Tc)
4V @ 250µA
FRFET®
500 V
10V
850mOhm @ 4.5A, 10V
35 nC @ 10 V
±30V
1030 pF @ 25 V
173W (Tc)
-
FQPF10N60CF
MOSFET N-CH 600V 9A TO220F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
9A (Tc)
4V @ 250µA
FRFET®
600 V
10V
800mOhm @ 4.5A, 10V
57 nC @ 10 V
±30V
2040 pF @ 25 V
50W (Tc)
-
FQB9N50CFTM
MOSFET N-CH 500V 9A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-
MOSFET (Metal Oxide)
-
9A (Tc)
4V @ 250µA
FRFET®
500 V
10V
850mOhm @ 4.5A, 10V
35 nC @ 10 V
±30V
1030 pF @ 25 V
173W (Tc)
-
FQB5N50CFTM
MOSFET N-CH 500V 5A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-
MOSFET (Metal Oxide)
-
5A (Tc)
4V @ 250µA
FRFET®
500 V
10V
1.55Ohm @ 2.5A, 10V
24 nC @ 10 V
±30V
625 pF @ 25 V
96W (Tc)
-
FQPF5N50CFTU
MOSFET N-CH 500V 5A TO220F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
5A (Tc)
4V @ 250µA
FRFET®
500 V
10V
1.55Ohm @ 2.5A, 10V
24 nC @ 10 V
±30V
625 pF @ 25 V
38W (Tc)
-
FDD5N50UTM-WS
MOSFET N-CH 500V 3A DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-
MOSFET (Metal Oxide)
-
3A (Tc)
5V @ 250µA
FRFET®
500 V
10V
2Ohm @ 1.5A, 10V
15 nC @ 10 V
±30V
650 pF @ 25 V
40W (Tc)
-
FQPF10N50CF
POWER FIELD-EFFECT TRANSISTOR, 1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
10A (Tc)
4V @ 250µA
FRFET®
500 V
10V
610mOhm @ 5A, 10V
56 nC @ 10 V
±30V
2096 pF @ 25 V
48W (Tc)
-
FQPF9N50CF
POWER FIELD-EFFECT TRANSISTOR, 9
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
9A (Tc)
4V @ 250µA
FRFET®
500 V
10V
850mOhm @ 4.5A, 10V
35 nC @ 10 V
±30V
1030 pF @ 25 V
44W (Tc)
-
FDPF5N50UT
MOSFET N-CH 500V 4A TO220F
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
4A (Tc)
5V @ 250µA
FRFET®
500 V
10V
2Ohm @ 2A, 10V
15 nC @ 10 V
±30V
650 pF @ 25 V
28W (Tc)
-
FQB9N50CFTM
MOSFET N-CH 500V 9A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-
MOSFET (Metal Oxide)
-
9A (Tc)
4V @ 250µA
FRFET®
500 V
10V
850mOhm @ 4.5A, 10V
35 nC @ 10 V
±30V
1030 pF @ 25 V
173W (Tc)
-
FQPF11N50CF
MOSFET N-CH 500V 11A TO220F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
11A (Tc)
4V @ 250µA
FRFET®
500 V
10V
550mOhm @ 5.5A, 10V
55 nC @ 10 V
±30V
2055 pF @ 25 V
48W (Tc)
-
FQPF10N50CF
MOSFET N-CH 500V 10A TO220F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
10A (Tc)
4V @ 250µA
FRFET®
500 V
10V
610mOhm @ 5A, 10V
56 nC @ 10 V
±30V
2096 pF @ 25 V
48W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.