TrenchFET® Gen III Series, Single FETs, MOSFETs

Results:
29
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Drain to Source Voltage (Vdss)
Vgs (Max)
FET Type
Operating Temperature
FET Feature
Grade
Mounting Type
Qualification
Technology
Results remaining29
Applied Filters:
TrenchFET® Gen III
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)GradeTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackagePackage / CaseQualification
SIA469DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
1+
$0.2332
5+
$0.2203
10+
$0.2073
Quantity
75,170 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
12A (Tc)
3V @ 250µA
4.5V, 10V
26.5mOhm @ 5A, 10V
15 nC @ 4.5 V
±20V
1020 pF @ 15 V
15.6W (Tc)
PowerPAK® SC-70-6 Single
PowerPAK® SC-70-6
-
SISS65DN-T1-GE3
MOSFET P-CH 30V 25.9A/94A PPAK
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
62,606 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
25.9A (Ta), 94A (Tc)
2.3V @ 250µA
4.5V, 10V
4.6mOhm @ 15A, 10V
138 nC @ 10 V
±20V
4930 pF @ 15 V
5.1W (Ta), 65.8W (Tc)
PowerPAK® 1212-8S
PowerPAK® 1212-8S
-
SI4401FDY-T1-GE3
MOSFET P-CH 40V 9.9A/14A 8SO
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
59,650 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
40 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
9.9A (Ta), 14A (Tc)
2.3V @ 250µA
4.5V, 10V
14.2mOhm @ 10A, 10V
100 nC @ 10 V
±20V
4000 pF @ 20 V
2.5W (Ta), 5W (Tc)
8-SO
8-SOIC (0.154", 3.90mm Width)
-
SISH615ADN-T1-GE3
MOSFET P-CH 20V 22.1A/35A PPAK
1+
$0.4817
5+
$0.4549
10+
$0.4282
Quantity
45,833 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
20 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
22.1A (Ta), 35A (Tc)
1.5V @ 250µA
2.5V, 10V
4.4mOhm @ 20A, 10V
183 nC @ 10 V
±12V
5590 pF @ 10 V
3.7W (Ta), 52W (Tc)
PowerPAK® 1212-8SH
PowerPAK® 1212-8SH
-
SISA35DN-T1-GE3
MOSFET P-CH 30V 10A/16A PPAK
1+
$0.3549
5+
$0.3352
10+
$0.3155
Quantity
43,980 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
10A (Ta), 16A (Tc)
2.2V @ 250µA
4.5V, 10V
19mOhm @ 9A, 10V
42 nC @ 10 V
±20V
1500 pF @ 15 V
3.2W (Ta), 24W (Tc)
PowerPAK® 1212-8
PowerPAK® 1212-8
-
SI4435FDY-T1-GE3
MOSFET P-CH 30V 12.6A 8SOIC
1+
$0.2662
5+
$0.2514
10+
$0.2366
Quantity
37,030 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
12.6A (Tc)
2.2V @ 250µA
4.5V, 10V
19mOhm @ 9A, 10V
42 nC @ 10 V
±20V
1500 pF @ 15 V
4.8W (Tc)
8-SOIC
8-SOIC (0.154", 3.90mm Width)
-
SI2319DDS-T1-GE3
MOSFET P-CH 40V 2.7A/3.6A SOT23
1+
$0.3042
5+
$0.2873
10+
$0.2704
Quantity
32,825 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
40 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
2.7A (Ta), 3.6A (Tc)
2.5V @ 250µA
4.5V, 10V
75mOhm @ 2.7A, 10V
19 nC @ 10 V
±20V
650 pF @ 20 V
1W (Ta), 1.7W (Tc)
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
-
SISS63DN-T1-GE3
MOSFET P-CH 20V 35.1/127.5A PPAK
1+
$0.6338
5+
$0.5986
10+
$0.5634
Quantity
23,455 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
20 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
35.1A (Ta), 127.5A (Tc)
1.5V @ 250µA
2.5V, 10V
2.7mOhm @ 15A, 10V
236 nC @ 8 V
±12V
7080 pF @ 10 V
5W (Ta), 65.8W (Tc)
PowerPAK® 1212-8S
PowerPAK® 1212-8S
-
SI7155DP-T1-GE3
MOSFET P-CH 40V 31A/100A PPAK
1+
$1.3183
5+
$1.2451
10+
$1.1718
Quantity
19,320 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
40 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
31A (Ta), 100A (Tc)
2.3V @ 250µA
4.5V, 10V
3.6mOhm @ 20A, 10V
330 nC @ 10 V
±20V
12900 pF @ 20 V
6.25W (Ta), 104W (Tc)
PowerPAK® SO-8
PowerPAK® SO-8
-
SISS27ADN-T1-GE3
MOSFET P-CH 30V 50A PPAK1212-8S
1+
$0.5577
5+
$0.5268
10+
$0.4958
Quantity
17,600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
50A (Tc)
2.2V @ 250µA
4.5V, 10V
5.1mOhm @ 15A, 10V
55 nC @ 4.5 V
±20V
4660 pF @ 15 V
57W (Tc)
PowerPAK® 1212-8S
PowerPAK® 1212-8S
-
SI4403DDY-T1-GE3
MOSFET P-CH 20V 15.4A 8SOIC
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
12,008 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
20 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
15.4A (Tc)
1V @ 250µA
1.8V, 4.5V
14mOhm @ 9A, 4.5V
99 nC @ 8 V
±8V
3250 pF @ 10 V
5W (Tc)
8-SOIC
8-SOIC (0.154", 3.90mm Width)
-
SI3473DDV-T1-GE3
MOSFET P-CHANNEL 12V 8A 6TSOP
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
12 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
8A (Tc)
1V @ 250µA
1.8V, 4.5V
17.8mOhm @ 8.7A, 4.5V
57 nC @ 8 V
±8V
1975 pF @ 6 V
3.6W (Tc)
6-TSOP
SOT-23-6 Thin, TSOT-23-6
-
SI7111EDN-T1-GE3
MOSFET P-CH 30V 60A PPAK1212-8
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
5,287 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
60A (Tc)
1.6V @ 250µA
2.5V, 4.5V
8.55mOhm @ 15A, 4.5V
46 nC @ 2.5 V
±12V
5860 pF @ 15 V
52W (Tc)
PowerPAK® 1212-8
PowerPAK® 1212-8
-
SISS61DN-T1-GE3
MOSFET P-CH 20V 30.9/111.9A PPAK
1+
$4.5634
5+
$4.3099
10+
$4.0563
Quantity
4,675 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
20 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
30.9A (Ta), 111.9A (Tc)
900mV @ 250µA
1.8V, 4.5V
3.5mOhm @ 15A, 4.5V
231 nC @ 10 V
±8V
8740 pF @ 10 V
5W (Ta), 65.8W (Tc)
PowerPAK® 1212-8S
PowerPAK® 1212-8S
-
SIR167DP-T1-GE3
MOSFET P-CH 30V 60A PPAK SO-8
1+
$15.2113
5+
$14.3662
10+
$13.5211
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
60A (Tc)
2.5V @ 250µA
4.5V, 10V
5.5mOhm @ 15A, 10V
111 nC @ 10 V
±25V
4380 pF @ 15 V
65.8W (Tc)
PowerPAK® SO-8
PowerPAK® SO-8
-
SI4103DY-T1-GE3
MOSFET P-CH 30V 14A/16A 8SO
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
2,440 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
14A (Ta), 16A (Tc)
2V @ 250µA
4.5V, 10V
7.9mOhm @ 10A, 10V
140 nC @ 10 V
±20V
5200 pF @ 15 V
2.5W (Ta), 5.2W (Tc)
8-SO
8-SOIC (0.154", 3.90mm Width)
-
SISS67DN-T1-GE3
MOSFET P-CH 30V 60A PPAK1212-8S
1+
$1.4197
5+
$1.3408
10+
$1.2620
Quantity
1,520 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
60A (Tc)
2.5V @ 250µA
4.5V, 10V
5.5mOhm @ 15A, 10V
111 nC @ 10 V
±25V
4380 pF @ 15 V
65.8W (Tc)
PowerPAK® 1212-8S
PowerPAK® 1212-8S
-
SIR165DP-T1-GE3
MOSFET P-CH 30V 60A PPAK SO-8
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
706 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
60A (Tc)
2.3V @ 250µA
4.5V, 10V
4.6mOhm @ 15A, 10V
138 nC @ 10 V
±20V
4930 pF @ 15 V
69.4W (Tc)
PowerPAK® SO-8
PowerPAK® SO-8
-
SIA477EDJT-T1-GE3
MOSFET P-CH 12V 12A PPAK SC70-6
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
334 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
12 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
12A (Tc)
1V @ 250µA
1.8V, 4.5V
13mOhm @ 5A, 4.5V
50 nC @ 4.5 V
±8V
3050 pF @ 6 V
19W (Tc)
PowerPAK® SC-70-6 Single
PowerPAK® SC-70-6
-
SI8823EDB-T2-E1
MOSFET P-CH 20V 2.7A 4MICRO FOOT
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
20 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen III
-
2.7A (Tc)
800mV @ 250µA
1.5V, 4.5V
95mOhm @ 1A, 4.5V
10 nC @ 4.5 V
±8V
580 pF @ 10 V
900mW (Tc)
4-MICRO FOOT® (0.8x0.8)
4-XFBGA
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.