Linear Series, Single FETs, MOSFETs

Results:
26
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Mounting Type
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining26
Applied Filters:
Linear
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeGradePackage / CaseSeriesTechnologyFET FeatureVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
IXTK46N50L
MOSFET N-CH 500V 46A TO264
1+
$22.8169
5+
$21.5493
10+
$20.2817
Quantity
2,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-264-3, TO-264AA
Linear
MOSFET (Metal Oxide)
-
6V @ 250µA
500 V
46A (Tc)
20V
160mOhm @ 500mA, 20V
260 nC @ 15 V
±30V
7000 pF @ 25 V
700W (Tc)
TO-264 (IXTK)
-
IXTT80N20L
MOSFET N-CH 200V 80A TO268
1+
$44.1674
5+
$41.7137
10+
$39.2599
Quantity
270 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Linear
MOSFET (Metal Oxide)
-
4V @ 250µA
200 V
80A (Tc)
10V
32mOhm @ 40A, 10V
180 nC @ 10 V
±20V
6160 pF @ 25 V
520W (Tc)
TO-268AA
-
IXTN22N100L
MOSFET N-CH 1000V 22A SOT227B
1+
$77.2185
5+
$72.9286
10+
$68.6386
Quantity
262 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
-
SOT-227-4, miniBLOC
Linear
MOSFET (Metal Oxide)
-
5.5V @ 250µA
1000 V
22A (Tc)
20V
600mOhm @ 11A, 20V
270 nC @ 15 V
±30V
7050 pF @ 25 V
700W (Tc)
SOT-227B
-
IXTN17N120L
MOSFET N-CH 1200V 15A SOT-227B
1+
$101.4085
5+
$95.7746
10+
$90.1408
Quantity
131 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
-
SOT-227-4, miniBLOC
Linear
MOSFET (Metal Oxide)
-
5V @ 250µA
1200 V
15A (Tc)
20V
900mOhm @ 8.5A, 20V
155 nC @ 15 V
±30V
8300 pF @ 25 V
540W (Tc)
SOT-227B
-
IXTB62N50L
MOSFET N-CH 500V 62A PLUS264
1+
$101.4085
5+
$95.7746
10+
$90.1408
Quantity
75 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-264-3, TO-264AA
Linear
MOSFET (Metal Oxide)
-
5.5V @ 250µA
500 V
62A (Tc)
20V
100mOhm @ 31A, 20V
550 nC @ 20 V
±30V
11500 pF @ 25 V
800W (Tc)
PLUS264™
-
IXTB30N100L
MOSFET N-CH 1000V 30A PLUS264
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-264-3, TO-264AA
Linear
MOSFET (Metal Oxide)
-
5V @ 250µA
1000 V
30A (Tc)
20V
450mOhm @ 500mA, 20V
545 nC @ 20 V
±30V
13200 pF @ 25 V
800W (Tc)
PLUS264™
-
IXTQ30N50L
MOSFET N-CH 500V 30A TO3P
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-3P-3, SC-65-3
Linear
MOSFET (Metal Oxide)
-
4.5V @ 250µA
500 V
30A (Tc)
10V
200mOhm @ 15A, 10V
240 nC @ 10 V
±20V
10200 pF @ 25 V
400W (Tc)
TO-3P
-
IXTH30N50L
MOSFET N-CH 500V 30A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3
Linear
MOSFET (Metal Oxide)
-
4.5V @ 250µA
500 V
30A (Tc)
10V
200mOhm @ 15A, 10V
240 nC @ 10 V
±20V
10200 pF @ 25 V
400W (Tc)
TO-247 (IXTH)
-
IXTX3N250L
MOSFET N-CH 2500V 3A PLUS247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3 Variant
Linear
MOSFET (Metal Oxide)
-
5V @ 1mA
2500 V
3A (Tc)
10V
10Ohm @ 1.5A, 10V
230 nC @ 10 V
±20V
5400 pF @ 25 V
417W (Tc)
PLUS247™-3
-
IXTH80N20L
MOSFET N-CH 200V 80A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3
Linear
MOSFET (Metal Oxide)
-
4V @ 250µA
200 V
80A (Tc)
10V
32mOhm @ 40A, 10V
180 nC @ 10 V
±20V
6160 pF @ 25 V
520W (Tc)
TO-247 (IXTH)
-
IXTH24N50L
MOSFET N-CH 500V 24A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3
Linear
MOSFET (Metal Oxide)
-
5V @ 250µA
500 V
24A (Tc)
20V
300mOhm @ 500mA, 20V
160 nC @ 20 V
±30V
2500 pF @ 25 V
400W (Tc)
TO-247 (IXTH)
-
IXTK3N250L
MOSFET N-CH 2500V 3A TO264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-264-3, TO-264AA
Linear
MOSFET (Metal Oxide)
-
5V @ 1mA
2500 V
3A (Tc)
10V
10Ohm @ 1.5A, 10V
230 nC @ 10 V
±20V
5400 pF @ 25 V
417W (Tc)
TO-264 (IXTK)
-
IXTN62N50L
MOSFET N-CH 500V 62A SOT227B
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
-
SOT-227-4, miniBLOC
Linear
MOSFET (Metal Oxide)
-
5V @ 250µA
500 V
62A (Tc)
20V
100mOhm @ 500mA, 20V
550 nC @ 20 V
±30V
11500 pF @ 25 V
800W (Tc)
SOT-227B
-
IXTT30N50L
MOSFET N-CH 500V 30A TO268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Linear
MOSFET (Metal Oxide)
-
4.5V @ 250µA
500 V
30A (Tc)
10V
200mOhm @ 15A, 10V
240 nC @ 10 V
±20V
10200 pF @ 25 V
400W (Tc)
TO-268AA
-
IXTX46N50L
MOSFET N-CH 500V 46A PLUS247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3 Variant
Linear
MOSFET (Metal Oxide)
-
6V @ 250µA
500 V
46A (Tc)
20V
160mOhm @ 500mA, 20V
260 nC @ 15 V
±30V
7000 pF @ 25 V
700W (Tc)
PLUS247™-3
-
IXTX17N120L
MOSFET N-CH 1200V 17A PLUS247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3 Variant
Linear
MOSFET (Metal Oxide)
-
5V @ 250µA
1200 V
17A (Tc)
20V
900mOhm @ 8.5A, 20V
155 nC @ 15 V
±30V
8300 pF @ 25 V
700W (Tc)
PLUS247™-3
-
IXTX22N100L
MOSFET N-CH 1000V 22A PLUS247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3 Variant
Linear
MOSFET (Metal Oxide)
-
5V @ 250µA
1000 V
22A (Tc)
10V
600mOhm @ 11A, 20V
270 nC @ 15 V
±30V
7050 pF @ 25 V
700W (Tc)
PLUS247™-3
-
IXTH2N150L
MOSFET N-CH 1500V 2A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-247-3
Linear
MOSFET (Metal Oxide)
-
8.5V @ 250µA
1500 V
2A (Tc)
20V
15Ohm @ 1A, 20V
72 nC @ 20 V
±30V
1470 pF @ 25 V
290W (Tc)
TO-247 (IXTH)
-
IXTK22N100L
MOSFET N-CH 1000V 22A TO264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-264-3, TO-264AA
Linear
MOSFET (Metal Oxide)
-
5V @ 250µA
1000 V
22A (Tc)
20V
600mOhm @ 11A, 20V
270 nC @ 15 V
±30V
7050 pF @ 25 V
700W (Tc)
TO-264 (IXTK)
-
IXTN8N150L
MOSFET N-CH 1500V 7.5A SOT-227B
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
-
SOT-227-4, miniBLOC
Linear
MOSFET (Metal Oxide)
-
8V @ 250µA
1500 V
7.5A (Tc)
20V
3.6Ohm @ 4A, 20V
250 nC @ 15 V
±30V
8000 pF @ 25 V
545W (Tc)
SOT-227B
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.