UltraFET™ Series, Single FETs, MOSFETs

Results:
389
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Vgs (Max)
Vgs(th) (Max) @ Id
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
Results remaining389
Applied Filters:
UltraFET™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeGradePackage / CaseTechnologySeriesFET FeatureVgs(th) (Max) @ IdSupplier Device PackageDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FDMS2572
MOSFET N-CH 150V 4.5A/27A 8MLP
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
35,800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
8-PowerWDFN
MOSFET (Metal Oxide)
UltraFET™
-
4V @ 250µA
8-MLP (5x6), Power56
150 V
4.5A (Ta), 27A (Tc)
6V, 10V
47mOhm @ 4.5A, 10V
43 nC @ 10 V
±20V
2610 pF @ 75 V
2.5W (Ta), 78W (Tc)
-
HUFA76419D3ST
N-CHANNEL LOGIC LEVEL ULTRAFET P
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
32,005 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
UltraFET™
-
3V @ 250µA
TO-252AA
60 V
20A (Tc)
4.5V, 10V
37mOhm @ 20A, 10V
27.5 nC @ 10 V
±16V
900 pF @ 25 V
75W (Tc)
-
FDS2734
N-CHANNEL UITRAFET TRENCH MOSFET
1+
$19.0141
5+
$17.9577
10+
$16.9014
Quantity
26,216 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
8-SOIC (0.154", 3.90mm Width)
MOSFET (Metal Oxide)
UltraFET™
-
4V @ 250µA
8-SOIC
250 V
3A (Ta)
6V, 10V
117mOhm @ 3A, 10V
45 nC @ 10 V
±20V
2610 pF @ 100 V
2.5W (Ta)
-
HUF75645P3
MOSFET N-CH 100V 75A TO220-3
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
16,800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
-
TO-220-3
MOSFET (Metal Oxide)
UltraFET™
-
4V @ 250µA
TO-220-3
100 V
75A (Tc)
10V
14mOhm @ 75A, 10V
238 nC @ 20 V
±20V
3790 pF @ 25 V
310W (Tc)
-
HUF75645S3ST
MOSFET N-CH 100V 75A D2PAK
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
12,849 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
UltraFET™
-
4V @ 250µA
TO-263 (D2Pak)
100 V
75A (Tc)
10V
14mOhm @ 75A, 10V
238 nC @ 20 V
±20V
3790 pF @ 25 V
310W (Tc)
-
HUF75639S3ST
POWER FIELD-EFFECT TRANSISTOR, 5
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
11,450 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
UltraFET™
-
4V @ 250µA
TO-263 (D2Pak)
100 V
56A (Tc)
10V
25mOhm @ 56A, 10V
130 nC @ 20 V
±20V
2000 pF @ 25 V
200W (Tc)
-
HUF75639S3ST
MOSFET N-CH 100V 56A D2PAK
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
11,450 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
UltraFET™
-
4V @ 250µA
TO-263 (D2Pak)
100 V
56A (Tc)
10V
25mOhm @ 56A, 10V
130 nC @ 20 V
±20V
2000 pF @ 25 V
200W (Tc)
-
HUF75321D3ST
MOSFET N-CH 55V 20A TO252AA
1+
$4.5634
5+
$4.3099
10+
$4.0563
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
UltraFET™
-
4V @ 250µA
TO-252AA
55 V
20A (Tc)
10V
36mOhm @ 20A, 10V
44 nC @ 20 V
±20V
680 pF @ 25 V
93W (Tc)
-
FDS2672
MOSFET N-CH 200V 3.9A 8SOIC
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
4,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
8-SOIC (0.154", 3.90mm Width)
MOSFET (Metal Oxide)
UltraFET™
-
4V @ 250µA
8-SOIC
200 V
3.9A (Ta)
6V, 10V
70mOhm @ 3.9A, 10V
46 nC @ 10 V
±20V
2535 pF @ 100 V
2.5W (Ta)
-
HUF75842S3ST
MOSFET N-CH 150V 43A D2PAK
1+
$2.1549
5+
$2.0352
10+
$1.9155
Quantity
3,512 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
UltraFET™
-
4V @ 250µA
TO-263 (D2Pak)
150 V
43A (Tc)
10V
42mOhm @ 43A, 10V
175 nC @ 20 V
±20V
2730 pF @ 25 V
230W (Tc)
-
HUF75842S3ST
MOSFET N-CH 150V 43A D2PAK
1+
$2.1549
5+
$2.0352
10+
$1.9155
Quantity
3,512 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
UltraFET™
-
4V @ 250µA
TO-263 (D2Pak)
150 V
43A (Tc)
10V
42mOhm @ 43A, 10V
175 nC @ 20 V
±20V
2730 pF @ 25 V
230W (Tc)
-
HUF75652G3
MOSFET N-CH 100V 75A TO247-3
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
3,400 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
UltraFET™
-
4V @ 250µA
TO-247-3
100 V
75A (Tc)
10V
8mOhm @ 75A, 10V
475 nC @ 20 V
±20V
7585 pF @ 25 V
515W (Tc)
-
FDMS5672
MOSFET N-CH 60V 10.6A/22A 8MLP
1+
$3.2958
5+
$3.1127
10+
$2.9296
Quantity
3,334 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
8-PowerWDFN
MOSFET (Metal Oxide)
UltraFET™
-
4V @ 250µA
8-MLP (5x6), Power56
60 V
10.6A (Ta), 22A (Tc)
6V, 10V
11.5mOhm @ 10.6A, 10V
45 nC @ 10 V
±20V
2800 pF @ 30 V
2.5W (Ta), 78W (Tc)
-
HUF75345P3
MOSFET N-CH 55V 75A TO220-3
1+
$3.5493
5+
$3.3521
10+
$3.1549
Quantity
2,550 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
-
TO-220-3
MOSFET (Metal Oxide)
UltraFET™
-
4V @ 250µA
TO-220-3
55 V
75A (Tc)
10V
7mOhm @ 75A, 10V
275 nC @ 20 V
±20V
4000 pF @ 25 V
325W (Tc)
-
FDD16AN08A0
MOSFET N-CH 75V 9A/50A DPAK
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
UltraFET™
-
4V @ 250µA
TO-252AA
75 V
9A (Ta), 50A (Tc)
6V, 10V
16mOhm @ 50A, 10V
47 nC @ 10 V
±20V
1874 pF @ 25 V
135W (Tc)
-
FDS2572
MOSFET N-CH 150V 4.9A 8SOIC
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
8-SOIC (0.154", 3.90mm Width)
MOSFET (Metal Oxide)
UltraFET™
-
4V @ 250µA
8-SOIC
150 V
4.9A (Tc)
6V, 10V
47mOhm @ 4.9A, 10V
38 nC @ 10 V
±20V
2050 pF @ 25 V
2.5W (Ta)
-
HUFA76429D3ST-F085
MOSFET N-CH 60V 20A TO252AA
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
UltraFET™
-
3V @ 250µA
TO-252AA
60 V
20A (Tc)
4.5V, 10V
23mOhm @ 20A, 10V
46 nC @ 10 V
±16V
1480 pF @ 25 V
110W (Tc)
-
FDMS3572
MOSFET N-CH 80V 8.8A/22A 8MLP
1+
$4.8169
5+
$4.5493
10+
$4.2817
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
8-PowerWDFN
MOSFET (Metal Oxide)
UltraFET™
-
4V @ 250µA
8-MLP (5x6), Power56
80 V
8.8A (Ta), 22A (Tc)
6V, 10V
16.5mOhm @ 8.8A, 10V
40 nC @ 10 V
±20V
2490 pF @ 40 V
2.5W (Ta), 78W (Tc)
-
FDD6632
MOSFET N-CH 30V 9A D-PAK
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
2,495 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
UltraFET™
-
3V @ 250µA
TO-252AA
30 V
9A (Tc)
4.5V, 10V
70mOhm @ 9A, 10V
4 nC @ 5 V
±20V
255 pF @ 15 V
15W (Tc)
-
HUF75645S3S
MOSFET N-CH 100V 75A D2PAK
1+
$63.3803
5+
$59.8592
10+
$56.3380
Quantity
2,400 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
UltraFET™
-
4V @ 250µA
TO-263 (D2Pak)
100 V
75A (Tc)
10V
14mOhm @ 75A, 10V
238 nC @ 20 V
±20V
3790 pF @ 25 V
310W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.