OptiMOS®-P2 Series, Single FETs, MOSFETs

Results:
28
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Grade
Mounting Type
Drain to Source Voltage (Vdss)
Qualification
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Technology
Results remaining28
Applied Filters:
OptiMOS®-P2
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseDrain to Source Voltage (Vdss)Operating TemperatureGradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IPD50P04P413ATMA2
MOSFET P-CH 40V 50A TO252-3
1+
$1.7746
5+
$1.6761
10+
$1.5775
Quantity
21,249 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-55°C ~ 175°C (TJ)
-
PG-TO252-3-313
MOSFET (Metal Oxide)
-
50A (Tc)
OptiMOS®-P2
10V
12.6mOhm @ 50A, 10V
4V @ 85µA
51 nC @ 10 V
±20V
3670 pF @ 25 V
58W (Tc)
-
IPD50P04P4L11ATMA2
MOSFET P-CH 40V 50A TO252-3
1+
$4.5634
5+
$4.3099
10+
$4.0563
Quantity
10,824 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-55°C ~ 175°C (TJ)
-
PG-TO252-3-313
MOSFET (Metal Oxide)
-
50A (Tc)
OptiMOS®-P2
4.5V, 10V
10.6mOhm @ 50A, 10V
2.2V @ 85µA
59 nC @ 10 V
+5V, -16V
3900 pF @ 25 V
58W (Tc)
-
IPD70P04P4L08ATMA2
MOSFET P-CH 40V 70A TO252-3
1+
$1.4704
5+
$1.3887
10+
$1.3070
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-55°C ~ 175°C (TJ)
-
PG-TO252-3-313
MOSFET (Metal Oxide)
-
70A (Tc)
OptiMOS®-P2
4.5V, 10V
7.8mOhm @ 70A, 10V
2.2V @ 120µA
92 nC @ 10 V
+5V, -16V
5430 pF @ 25 V
75W (Tc)
-
IPD85P04P4L06ATMA2
MOSFET P-CH 40V 85A TO252-3
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
4,748 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-55°C ~ 175°C (TJ)
-
PG-TO252-3-313
MOSFET (Metal Oxide)
-
85A (Tc)
OptiMOS®-P2
4.5V, 10V
6.4mOhm @ 85A, 10V
2.2V @ 150µA
104 nC @ 10 V
+5V, -16V
6580 pF @ 25 V
88W (Tc)
-
IPB180P04P403ATMA2
MOSFET P-CH 40V 180A TO263-7
1+
$5.5775
5+
$5.2676
10+
$4.9577
Quantity
2,672 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-263-7, D²Pak (6 Leads + Tab)
40 V
-55°C ~ 175°C (TJ)
Automotive
PG-TO263-7-3
MOSFET (Metal Oxide)
-
180A (Tc)
OptiMOS®-P2
-
2.8mOhm @ 100A, 10V
4V @ 410µA
250 nC @ 10 V
±20V
17640 pF @ 25 V
150W (Tc)
AEC-Q101
IPD80P03P4L07ATMA2
MOSFET P-CH 30V 80A TO252-31
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
30 V
-55°C ~ 175°C (TJ)
Automotive
PG-TO252-3-11
MOSFET (Metal Oxide)
-
80A (Tc)
OptiMOS®-P2
-
6.8mOhm @ 80A, 10V
2V @ 130µA
80 nC @ 10 V
+5V, -16V
5700 pF @ 25 V
88W (Tc)
AEC-Q101
IPD90P03P4L04ATMA2
MOSFET P-CH 30V 90A TO252-31
1+
$22.8169
5+
$21.5493
10+
$20.2817
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
30 V
-55°C ~ 175°C (TJ)
Automotive
PG-TO252-3-11
MOSFET (Metal Oxide)
-
90A (Tc)
OptiMOS®-P2
-
4.1mOhm @ 90A, 10V
2V @ 253µA
160 nC @ 10 V
+5V, -16V
11300 pF @ 25 V
137W (Tc)
AEC-Q101
IPD90P04P4L04ATMA2
MOSFET P-CH 40V 90A TO252-3
1+
$20.2817
5+
$19.1549
10+
$18.0282
Quantity
2,485 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-55°C ~ 175°C (TJ)
-
PG-TO252-3-313
MOSFET (Metal Oxide)
-
90A (Tc)
OptiMOS®-P2
4.5V, 10V
4.3mOhm @ 90A, 10V
2.2V @ 250µA
176 nC @ 10 V
+5V, -16V
11570 pF @ 25 V
125W (Tc)
-
IPB120P04P404ATMA2
MOSFET P-CH 40V 120A TO263-3
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
2,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
40 V
-55°C ~ 175°C (TJ)
Automotive
PG-TO263-3-2
MOSFET (Metal Oxide)
-
120A (Tc)
OptiMOS®-P2
-
3.8mOhm @ 100A, 10V
4V @ 340µA
205 nC @ 10 V
±20V
14790 pF @ 25 V
136W (Tc)
AEC-Q101
IPB120P04P4L03ATMA2
MOSFET P-CH 40V 120A TO263-3
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
2,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
40 V
-55°C ~ 175°C (TJ)
-
PG-TO263-3-2
MOSFET (Metal Oxide)
-
120A (Tc)
OptiMOS®-P2
4.5V, 10V
3.4mOhm @ 100A, 10V
2.2V @ 340µA
234 nC @ 10 V
+5V, -16V
15000 pF @ 25 V
136W (Tc)
-
IPP120P04P4L03AKSA2
1+
$21.5493
5+
$20.3521
10+
$19.1549
Quantity
1,550 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
P-Channel
TO-220-3
40 V
-55°C ~ 175°C (TJ)
-
PG-TO220-3-1
MOSFET (Metal Oxide)
-
120A (Tc)
OptiMOS®-P2
4.5V, 10V
3.4mOhm @ 100A, 10V
2.2V @ 340µA
234 nC @ 10 V
+5V, -16V
15000 pF @ 25 V
136W (Tc)
-
IPD85P04P407ATMA2
MOSFET P-CH 40V 85A TO252-3
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
1,545 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-55°C ~ 175°C (TJ)
Automotive
PG-TO252-3-313
MOSFET (Metal Oxide)
-
85A (Tc)
OptiMOS®-P2
-
7.3mOhm @ 85A, 10V
4V @ 150µA
89 nC @ 10 V
±20V
6085 pF @ 25 V
88W (Tc)
AEC-Q101
IPB80P04P405ATMA2
MOSFET P-CH 40V 80A TO263-3
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
1,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
40 V
-55°C ~ 175°C (TJ)
Automotive
PG-TO263-3-2
MOSFET (Metal Oxide)
-
80A (Tc)
OptiMOS®-P2
-
5.2mOhm @ 80A, 10V
4V @ 250µA
151 nC @ 10 V
±20V
10300 pF @ 25 V
125W (Tc)
AEC-Q101
IPD90P04P405ATMA2
MOSFET P-CH 40V 90A TO252-3
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
350 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-55°C ~ 175°C (TJ)
-
PG-TO252-3-313
MOSFET (Metal Oxide)
-
90A (Tc)
OptiMOS®-P2
10V
4.7mOhm @ 90A, 10V
4V @ 250µA
154 nC @ 10 V
±20V
10300 pF @ 25 V
125W (Tc)
-
IPD70P04P409ATMA2
MOSFET P-CH 40V 73A TO252-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-55°C ~ 175°C (TJ)
Automotive
PG-TO252-3-313
MOSFET (Metal Oxide)
-
73A (Tc)
OptiMOS®-P2
-
8.9mOhm @ 70A, 10V
4V @ 120µA
70 nC @ 10 V
±20V
4810 pF @ 25 V
75W (Tc)
AEC-Q101
IPB80P03P4L04ATMA2
MOSFET P-CH 30V 80A TO263-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
30 V
-55°C ~ 175°C (TJ)
Automotive
PG-TO263-3-2
MOSFET (Metal Oxide)
-
80A (Tc)
OptiMOS®-P2
-
4.4mOhm @ 80A, 10V
2V @ 253µA
160 nC @ 10 V
+5V, -16V
11300 pF @ 25 V
137W (Tc)
AEC-Q101
IPP80P03P4L04AKSA2
MOSFET P-CH 30V 80A TO220-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
P-Channel
TO-220-3
30 V
-55°C ~ 175°C (TJ)
Automotive
PG-TO220-3-1
MOSFET (Metal Oxide)
-
80A (Tc)
OptiMOS®-P2
-
4.4mOhm @ 80A, 10V
2V @ 253µA
160 nC @ 10 V
+5V, -16V
11300 pF @ 25 V
137W (Tc)
AEC-Q101
IPD50P04P4L11AUMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-55°C ~ 175°C (TJ)
-
PG-TO252-3-313
MOSFET (Metal Oxide)
-
50A (Tc)
OptiMOS®-P2
4.5V, 10V
10.6mOhm @ 50A, 10V
2.2V @ 85µA
59 nC @ 10 V
+5V, -16V
3900 pF @ 25 V
58W (Tc)
-
IPD50P04P413AUMA2
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-55°C ~ 175°C (TJ)
-
PG-TO252-3-313
MOSFET (Metal Oxide)
-
50A (Tc)
OptiMOS®-P2
10V
12.6mOhm @ 50A, 10V
4V @ 85µA
51 nC @ 10 V
±20V
3670 pF @ 25 V
58W (Tc)
-
IPB80P04P4L06ATMA2
MOSFET P-CH 40V 80A TO263-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
40 V
-55°C ~ 175°C (TJ)
-
PG-TO263-3-2
MOSFET (Metal Oxide)
-
80A (Tc)
OptiMOS®-P2
4.5V, 10V
6.7mOhm @ 80A, 10V
2.2V @ 150µA
104 nC @ 10 V
+5V, -16V
6580 pF @ 25 V
88W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.