HiPerFET™, Q Class Series, Single FETs, MOSFETs

Results:
68
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Supplier Device Package
Package / Case
Operating Temperature
Mounting Type
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining68
Applied Filters:
HiPerFET™, Q Class
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
IXFH6N100Q
MOSFET N-CH 1000V 6A TO247AD
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
1,380 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
6A (Tc)
HiPerFET™, Q Class
1000 V
10V
1.9Ohm @ 3A, 10V
4.5V @ 2.5mA
48 nC @ 10 V
±20V
2200 pF @ 25 V
180W (Tc)
TO-247AD (IXFH)
-
IXFR48N50Q
MOSFET N-CH 500V 40A ISOPLUS247
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
780 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
40A (Tc)
HiPerFET™, Q Class
500 V
10V
110mOhm @ 24A, 10V
4V @ 4mA
190 nC @ 10 V
±20V
7000 pF @ 25 V
310W (Tc)
ISOPLUS247™
-
IXFH52N30Q
MOSFET N-CH 300V 52A TO247AD
1+
$14.1972
5+
$13.4085
10+
$12.6197
Quantity
275 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
52A (Tc)
HiPerFET™, Q Class
300 V
10V
60mOhm @ 500mA, 10V
4V @ 4mA
150 nC @ 10 V
±20V
5300 pF @ 25 V
360W (Tc)
TO-247AD (IXFH)
-
IXFK27N80Q
MOSFET N-CH 800V 27A TO264AA
1+
$10.1408
5+
$9.5775
10+
$9.0141
Quantity
185 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
MOSFET (Metal Oxide)
-
27A (Tc)
HiPerFET™, Q Class
800 V
10V
320mOhm @ 500mA, 10V
4.5V @ 4mA
170 nC @ 10 V
±20V
7600 pF @ 25 V
500W (Tc)
TO-264AA (IXFK)
-
IXFN48N50Q
MOSFET N-CH 500V 48A SOT-227B
1+
$40.5634
5+
$38.3099
10+
$36.0563
Quantity
148 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
MOSFET (Metal Oxide)
-
48A (Tc)
HiPerFET™, Q Class
500 V
10V
100mOhm @ 500mA, 10V
4V @ 4mA
190 nC @ 10 V
±20V
7000 pF @ 25 V
500W (Tc)
SOT-227B
-
IXFX48N50Q
MOSFET N-CH 500V 48A PLUS247-3
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
19 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3 Variant
-
MOSFET (Metal Oxide)
-
48A (Tc)
HiPerFET™, Q Class
500 V
10V
100mOhm @ 24A, 10V
4V @ 4mA
190 nC @ 10 V
±20V
7000 pF @ 25 V
500W (Tc)
PLUS247™-3
-
IXFN21N100Q
MOSFET N-CH 1000V 21A SOT-227B
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
MOSFET (Metal Oxide)
-
21A (Tc)
HiPerFET™, Q Class
1000 V
10V
500mOhm @ 500mA, 10V
5V @ 4mA
170 nC @ 10 V
±20V
5900 pF @ 25 V
520W (Tc)
SOT-227B
-
IXFA4N100Q
MOSFET N-CH 1000V 4A TO263
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Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
-
4A (Tc)
HiPerFET™, Q Class
1000 V
10V
3Ohm @ 2A, 10V
4.5V @ 1.5mA
39 nC @ 10 V
±20V
1050 pF @ 25 V
150W (Tc)
TO-263AA (IXFA)
-
IXFR24N90Q
MOSFET N-CH 900V ISOPLUS247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
-
HiPerFET™, Q Class
900 V
-
-
-
-
-
-
-
ISOPLUS247™
-
IXFH17N80Q
MOSFET N-CH 800V 17A TO247AD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
17A (Tc)
HiPerFET™, Q Class
800 V
10V
600mOhm @ 500mA, 10V
4.5V @ 4mA
95 nC @ 10 V
±20V
3600 pF @ 25 V
400W (Tc)
TO-247AD (IXFH)
-
IXFK21N100Q
MOSFET N-CH 1000V 21A TO264AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
MOSFET (Metal Oxide)
-
21A (Tc)
HiPerFET™, Q Class
1000 V
10V
500mOhm @ 10.5A, 10V
5.5V @ 4mA
170 nC @ 10 V
±20V
6900 pF @ 25 V
500W (Tc)
TO-264AA (IXFK)
-
IXFH12N100Q
MOSFET N-CH 1000V 12A TO247AD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
12A (Tc)
HiPerFET™, Q Class
1000 V
10V
1.05Ohm @ 6A, 10V
5.5V @ 4mA
90 nC @ 10 V
±20V
2900 pF @ 25 V
300W (Tc)
TO-247AD (IXFH)
-
IXFN44N50Q
MOSFET N-CH 500V 44A SOT-227B
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
MOSFET (Metal Oxide)
-
44A (Tc)
HiPerFET™, Q Class
500 V
10V
120mOhm @ 500mA, 10V
4V @ 4mA
190 nC @ 10 V
±20V
7000 pF @ 25 V
500W (Tc)
SOT-227B
-
IXFR10N100Q
MOSFET N-CH 1000V 9A ISOPLUS247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
9A (Tc)
HiPerFET™, Q Class
1000 V
10V
1.2Ohm @ 5A, 10V
5.5V @ 4mA
90 nC @ 10 V
±20V
2900 pF @ 25 V
250W (Tc)
ISOPLUS247™
-
IXFR4N100Q
MOSFET N-CH 1000V 3.5A ISOPLS247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
3.5A (Tc)
HiPerFET™, Q Class
1000 V
10V
3Ohm @ 2A, 10V
5V @ 1.5mA
39 nC @ 10 V
±20V
1050 pF @ 25 V
80W (Tc)
ISOPLUS247™
-
IXFH15N80Q
MOSFET N-CH 800V 15A TO247AD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
15A (Tc)
HiPerFET™, Q Class
800 V
10V
600mOhm @ 7.5A, 10V
4.5V @ 4mA
90 nC @ 10 V
±20V
4300 pF @ 25 V
300W (Tc)
TO-247AD (IXFH)
-
IXFR27N80Q
MOSFET N-CH 800V 27A ISOPLUS247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
27A (Tc)
HiPerFET™, Q Class
800 V
10V
300mOhm @ 13.5A, 10V
4.5V @ 4mA
170 nC @ 10 V
±20V
7600 pF @ 25 V
500W (Tc)
ISOPLUS247™
-
IXFH36N55Q
MOSFET N-CH 550V 36A TO247AD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
36A (Tc)
HiPerFET™, Q Class
550 V
10V
160mOhm @ 500mA, 10V
4.5V @ 4mA
128 nC @ 10 V
±30V
4500 pF @ 25 V
500W (Tc)
TO-247AD (IXFH)
-
IXFT13N80Q
MOSFET N-CH 800V 13A TO268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
MOSFET (Metal Oxide)
-
13A (Tc)
HiPerFET™, Q Class
800 V
10V
700mOhm @ 6.5A, 10V
4.5V @ 4mA
90 nC @ 10 V
±20V
3250 pF @ 25 V
250W (Tc)
TO-268AA
-
IXFH7N90Q
MOSFET N-CH 900V 7A TO247AD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
7A (Tc)
HiPerFET™, Q Class
900 V
10V
1.5Ohm @ 500mA, 10V
5V @ 2.5mA
56 nC @ 10 V
±20V
2200 pF @ 25 V
180W (Tc)
TO-247AD (IXFH)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.