HiPerFET™, PolarHT™ Series, Single FETs, MOSFETs

Results:
32
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Operating Temperature
Mounting Type
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining32
Applied Filters:
HiPerFET™, PolarHT™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeGradePackage / CaseSupplier Device PackageTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXFC22N60P
MOSFET N-CH 600V 12A ISOPLUS220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
ISOPLUS220™
ISOPLUS220™
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
12A (Tc)
5V @ 4mA
600 V
10V
360mOhm @ 11A, 10V
58 nC @ 10 V
±30V
4000 pF @ 25 V
130W (Tc)
-
IXFV16N80PS
MOSFET N-CH 800V 16A PLUS-220SMD
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
PLUS-220SMD
PLUS-220SMD
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
16A (Tc)
5V @ 4mA
800 V
10V
600mOhm @ 500mA, 10V
71 nC @ 10 V
±30V
4600 pF @ 25 V
460W (Tc)
-
IXFV14N80P
MOSFET N-CH 800V 14A PLUS220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3, Short Tab
PLUS220
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
14A (Tc)
5.5V @ 4mA
800 V
10V
720mOhm @ 500mA, 10V
61 nC @ 10 V
±30V
3900 pF @ 25 V
400W (Tc)
-
IXFV12N80P
MOSFET N-CH 800V 12A PLUS220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3, Short Tab
PLUS220
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
12A (Tc)
5.5V @ 2.5mA
800 V
10V
850mOhm @ 500mA, 10V
51 nC @ 10 V
±30V
2800 pF @ 25 V
360W (Tc)
-
IXFP3N50PM
MOSFET N-CH 500V 2.7A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3
TO-220-3
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
2.7A (Tc)
5.5V @ 250µA
500 V
10V
2Ohm @ 1.8A, 10V
9.3 nC @ 10 V
±30V
409 pF @ 25 V
36W (Tc)
-
IXFC20N80P
MOSFET N-CH 800V 11A ISOPLUS220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
ISOPLUS220™
ISOPLUS220™
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
11A (Tc)
5V @ 4mA
800 V
10V
500mOhm @ 10A, 10V
85 nC @ 10 V
±30V
4680 pF @ 25 V
166W (Tc)
-
IXFC14N80P
MOSFET N-CH 800V 8A ISOPLUS220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
ISOPLUS220™
ISOPLUS220™
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
8A (Tc)
5.5V @ 4mA
800 V
10V
770mOhm @ 7A, 10V
61 nC @ 10 V
±30V
3900 pF @ 25 V
130W (Tc)
-
IXFC12N80P
MOSFET N-CH 800V 7A ISOPLUS220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
ISOPLUS220™
ISOPLUS220™
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
7A (Tc)
5.5V @ 2.5mA
800 V
10V
930mOhm @ 6A, 10V
51 nC @ 10 V
±30V
2800 pF @ 25 V
120W (Tc)
-
IXFC110N10P
MOSFET N-CH 100V 60A ISOPLUS220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
-
ISOPLUS220™
ISOPLUS220™
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
60A (Tc)
5V @ 4mA
100 V
10V
17mOhm @ 55A, 10V
110 nC @ 10 V
±20V
3550 pF @ 25 V
120W (Tc)
-
IXFV30N60PS
MOSFET N-CH 600V 30A PLUS-220SMD
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
PLUS-220SMD
PLUS-220SMD
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
30A (Tc)
5V @ 4mA
600 V
10V
240mOhm @ 15A, 10V
82 nC @ 10 V
±30V
4000 pF @ 25 V
500W (Tc)
-
IXFC16N50P
MOSFET N-CH 500V 10A ISOPLUS220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
ISOPLUS220™
ISOPLUS220™
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
10A (Tc)
5.5V @ 2.5mA
500 V
10V
450mOhm @ 8A, 10V
43 nC @ 10 V
±30V
2250 pF @ 25 V
125W (Tc)
-
IXFV22N60PS
MOSFET N-CH 600V 22A PLUS-220SMD
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
PLUS-220SMD
PLUS-220SMD
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
22A (Tc)
5.5V @ 4mA
600 V
10V
350mOhm @ 11A, 10V
58 nC @ 10 V
±30V
3600 pF @ 25 V
400W (Tc)
-
IXFC14N60P
MOSFET N-CH 600V 8A ISOPLUS220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
ISOPLUS220™
ISOPLUS220™
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
8A (Tc)
5.5V @ 2.5mA
600 V
10V
630mOhm @ 7A, 10V
36 nC @ 10 V
±30V
2500 pF @ 25 V
125W (Tc)
-
IXFC36N50P
MOSFET N-CH 500V 19A ISOPLUS220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
ISOPLUS220™
ISOPLUS220™
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
19A (Tc)
5V @ 4mA
500 V
10V
190mOhm @ 18A, 10V
93 nC @ 10 V
±30V
5500 pF @ 25 V
156W (Tc)
-
IXFV30N50PS
MOSFET N-CH 500V 30A PLUS-220SMD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
PLUS-220SMD
PLUS-220SMD
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
30A (Tc)
5V @ 4mA
500 V
10V
200mOhm @ 15A, 10V
70 nC @ 10 V
±30V
4150 pF @ 25 V
460W (Tc)
-
IXFV30N50P
MOSFET N-CH 500V 30A PLUS220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3, Short Tab
PLUS220
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
30A (Tc)
5V @ 4mA
500 V
10V
200mOhm @ 15A, 10V
70 nC @ 10 V
±30V
4150 pF @ 25 V
460W (Tc)
-
IXFC26N50P
MOSFET N-CH 500V 15A ISOPLUS220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
ISOPLUS220™
ISOPLUS220™
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
15A (Tc)
5.5V @ 4mA
500 V
10V
260mOhm @ 13A, 10V
65 nC @ 10 V
±30V
3600 pF @ 25 V
130W (Tc)
-
IXFV26N50PS
MOSFET N-CH 500V 26A PLUS-220SMD
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
PLUS-220SMD
PLUS-220SMD
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
26A (Tc)
5.5V @ 4mA
500 V
10V
230mOhm @ 13A, 10V
60 nC @ 10 V
±30V
3600 pF @ 25 V
400W (Tc)
-
IXFV22N50PS
MOSFET N-CH 500V 22A PLUS-220SMD
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
PLUS-220SMD
PLUS-220SMD
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
22A (Tc)
5.5V @ 2.5mA
500 V
10V
270mOhm @ 11A, 10V
50 nC @ 10 V
±30V
2630 pF @ 25 V
350W (Tc)
-
IXFV22N50P
MOSFET N-CH 500V 22A PLUS220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3, Short Tab
PLUS220
MOSFET (Metal Oxide)
HiPerFET™, PolarHT™
-
22A (Tc)
5.5V @ 2.5mA
500 V
10V
270mOhm @ 11A, 10V
50 nC @ 10 V
±30V
2630 pF @ 25 V
350W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.