π-MOSVII Series, Single FETs, MOSFETs

Results:
74
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining74
Applied Filters:
π-MOSVII
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseSupplier Device PackageOperating TemperatureGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)QualificationSeries
TK7P50D(T6RSS-Q)
1+
$0.6845
5+
$0.6465
10+
$0.6085
Quantity
20,400 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
150°C (TJ)
-
MOSFET (Metal Oxide)
-
7A (Ta)
500 V
10V
1.22Ohm @ 3.5A, 10V
4.4V @ 1mA
12 nC @ 10 V
±30V
600 pF @ 25 V
100W (Tc)
-
π-MOSVII
TK2Q60D(Q)
1+
$0.4817
5+
$0.4549
10+
$0.4282
Quantity
15,750 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-251-3 Stub Leads, IPak
PW-MOLD2
150°C (TJ)
-
MOSFET (Metal Oxide)
-
2A (Ta)
600 V
10V
4.3Ohm @ 1A, 10V
4.4V @ 1mA
7 nC @ 10 V
±30V
280 pF @ 25 V
60W (Tc)
-
π-MOSVII
TK18A50D(STA4,Q,M)
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
1,940 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220SIS
150°C (TJ)
-
MOSFET (Metal Oxide)
-
18A (Ta)
500 V
10V
270mOhm @ 9A, 10V
4V @ 1mA
45 nC @ 10 V
±30V
2600 pF @ 25 V
50W (Tc)
-
π-MOSVII
TK6A60D(STA4,Q,M)
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
950 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220SIS
150°C (TJ)
-
MOSFET (Metal Oxide)
-
6A (Ta)
600 V
10V
1.25Ohm @ 3A, 10V
4V @ 1mA
16 nC @ 10 V
±30V
800 pF @ 25 V
40W (Tc)
-
π-MOSVII
TK15A60D(STA4,Q,M)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220SIS
150°C (TJ)
-
MOSFET (Metal Oxide)
-
15A (Ta)
600 V
10V
370mOhm @ 7.5A, 10V
4V @ 1mA
45 nC @ 10 V
±30V
2600 pF @ 25 V
50W (Tc)
-
π-MOSVII
TK20A25D,S5Q(M
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220SIS
150°C (TJ)
-
MOSFET (Metal Oxide)
-
20A (Ta)
250 V
10V
100mOhm @ 10A, 10V
3.5V @ 1mA
55 nC @ 10 V
±20V
2550 pF @ 100 V
45W (Tc)
-
π-MOSVII
TK4A53D(STA4,Q,M)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220SIS
150°C (TJ)
-
MOSFET (Metal Oxide)
-
4A (Ta)
525 V
10V
1.7Ohm @ 2A, 10V
4.4V @ 1mA
11 nC @ 10 V
±30V
490 pF @ 25 V
35W (Tc)
-
π-MOSVII
TK4P60DA(T6RSS-Q)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
150°C (TJ)
-
MOSFET (Metal Oxide)
-
3.5A (Ta)
600 V
10V
2.2Ohm @ 1.8A, 10V
4.4V @ 1mA
11 nC @ 10 V
±30V
490 pF @ 25 V
80W (Tc)
-
π-MOSVII
TK4A55DA(STA4,Q,M)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220SIS
150°C (TJ)
-
MOSFET (Metal Oxide)
-
3.5A (Ta)
550 V
10V
2.45Ohm @ 1.8A, 10V
4.4V @ 1mA
9 nC @ 10 V
±30V
380 pF @ 25 V
30W (Tc)
-
π-MOSVII
TK4A65DA(STA4,Q,M)
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220SIS
150°C (TJ)
-
MOSFET (Metal Oxide)
-
3.5A (Ta)
650 V
10V
1.9Ohm @ 1.8A, 10V
4.4V @ 1mA
12 nC @ 10 V
±30V
600 pF @ 25 V
35W (Tc)
-
π-MOSVII
TK4P55DA(T6RSS-Q)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
150°C (TJ)
-
MOSFET (Metal Oxide)
-
3.5A (Ta)
550 V
10V
2.45Ohm @ 1.8A, 10V
4.4V @ 1mA
9 nC @ 10 V
±30V
380 pF @ 25 V
80W (Tc)
-
π-MOSVII
TK16A55D(STA4,Q,M)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220SIS
150°C (TJ)
-
MOSFET (Metal Oxide)
-
16A (Ta)
550 V
-
330mOhm @ 8A, 10V
4V @ 1mA
45 nC @ 10 V
-
2600 pF @ 25 V
-
-
π-MOSVII
TK4A55D(STA4,Q,M)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220SIS
150°C (TJ)
-
MOSFET (Metal Oxide)
-
4A (Ta)
550 V
10V
1.88Ohm @ 2A, 10V
4.4V @ 1mA
11 nC @ 10 V
±30V
490 pF @ 25 V
35W (Tc)
-
π-MOSVII
TK4A60DB(STA4,Q,M)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220SIS
150°C (TJ)
-
MOSFET (Metal Oxide)
-
3.7A (Ta)
600 V
10V
2Ohm @ 1.9A, 10V
4.4V @ 1mA
11 nC @ 10 V
±30V
540 pF @ 25 V
35W (Tc)
-
π-MOSVII
TK4P55D(T6RSS-Q)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
150°C (TJ)
-
MOSFET (Metal Oxide)
-
4A (Ta)
550 V
10V
1.88Ohm @ 2A, 10V
4.4V @ 1mA
11 nC @ 10 V
±30V
490 pF @ 25 V
80W (Tc)
-
π-MOSVII
TK8A60DA(STA4,Q,M)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220SIS
150°C (TJ)
-
MOSFET (Metal Oxide)
-
7.5A (Ta)
600 V
10V
1Ohm @ 4A, 10V
4V @ 1mA
20 nC @ 10 V
±30V
1050 pF @ 25 V
45W (Tc)
-
π-MOSVII
TK11A60D(STA4,Q,M)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220SIS
150°C (TJ)
-
MOSFET (Metal Oxide)
-
11A (Ta)
600 V
10V
650mOhm @ 5.5A, 10V
4V @ 1mA
28 nC @ 10 V
±30V
1550 pF @ 25 V
45W (Tc)
-
π-MOSVII
TK2P60D(TE16L1,NQ)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
PW-MOLD
150°C (TJ)
-
MOSFET (Metal Oxide)
-
2A (Ta)
600 V
10V
4.3Ohm @ 1A, 10V
4.4V @ 1mA
7 nC @ 10 V
±30V
280 pF @ 25 V
60W (Tc)
-
π-MOSVII
TK4P50D(T6RSS-Q)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
150°C (TJ)
-
MOSFET (Metal Oxide)
-
4A (Ta)
500 V
10V
2Ohm @ 2A, 10V
4.4V @ 1mA
9 nC @ 10 V
±30V
380 pF @ 25 V
80W (Tc)
-
π-MOSVII
TK4P60DB(T6RSS-Q)
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
150°C (TJ)
-
MOSFET (Metal Oxide)
-
3.7A (Ta)
600 V
10V
2Ohm @ 1.9A, 10V
4.4V @ 1mA
11 nC @ 10 V
±30V
540 pF @ 25 V
80W (Tc)
-
π-MOSVII

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.