PowerTrench®, SyncFET™ Series, Single FETs, MOSFETs

Results:
66
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Vgs (Max)
Operating Temperature
FET Feature
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Grade
Mounting Type
Qualification
Technology
Results remaining66
Applied Filters:
PowerTrench®, SyncFET™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)GradePackage / CaseSeriesTechnologyVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Supplier Device PackageQualification
FDMS8570SDC
28A, 25V, 0.0028OHM, N-CHANNEL,
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
2.2V @ 1mA
28A (Ta), 60A (Tc)
4.5V, 10V
2.8mOhm @ 28A, 10V
42 nC @ 10 V
±12V
2825 pF @ 13 V
Schottky Diode (Body)
3.3W (Ta), 59W (Tc)
Dual Cool™56
-
FDMS8570S
28A, 25V, 0.0028OHM, N-CHANNEL,
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
2.2V @ 1mA
24A (Ta), 60A (Tc)
4.5V, 10V
2.8mOhm @ 24A, 10V
425 nC @ 10 V
±12V
2825 pF @ 13 V
-
2.5W (Ta), 48W (Tc)
8-PQFN (5x6)
-
FDS6676AS
SMALL SIGNAL FIELD-EFFECT TRANSI
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-SOIC (0.154", 3.90mm Width)
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
3V @ 1mA
14.5A (Ta)
4.5V, 10V
6mOhm @ 14.5A, 10V
63 nC @ 10 V
±20V
2510 pF @ 15 V
-
2.5W (Ta)
8-SOIC
-
FDD6680AS
MOSFET N-CH 30V 55A TO252
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
TO-252-3, DPak (2 Leads + Tab), SC-63
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
3V @ 1mA
55A (Ta)
4.5V, 10V
10.5mOhm @ 12.5A, 10V
29 nC @ 10 V
±20V
1200 pF @ 15 V
-
60W (Ta)
TO-252 (DPAK)
-
FDMS8570S
MOSFET N-CH 25V 24A/60A 8PQFN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
2.2V @ 1mA
24A (Ta), 60A (Tc)
4.5V, 10V
2.8mOhm @ 24A, 10V
425 nC @ 10 V
±12V
2825 pF @ 13 V
-
2.5W (Ta), 48W (Tc)
8-PQFN (5x6)
-
FDS6699S
MOSFET N-CH 30V 21A 8SOIC
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
32,351 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-SOIC (0.154", 3.90mm Width)
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
3V @ 1mA
21A (Ta)
4.5V, 10V
3.6mOhm @ 21A, 10V
91 nC @ 10 V
±20V
3610 pF @ 15 V
-
2.5W (Ta)
8-SOIC
-
FDMC7672S
MOSFET N-CH 30V 14.8A/18A 8MLP
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
30,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-PowerWDFN
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
3V @ 1mA
14.8A (Ta), 18A (Tc)
4.5V, 10V
6mOhm @ 14.8A, 10V
42 nC @ 10 V
±20V
2520 pF @ 15 V
-
2.3W (Ta), 36W (Tc)
8-MLP (3.3x3.3)
-
FDMS7660AS
MOSFET N-CH 30V 26A/42A 8PQFN
1+
$0.3803
5+
$0.3592
10+
$0.3380
Quantity
25,681 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-PowerTDFN
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
3V @ 1mA
26A (Ta), 42A (Tc)
4.5V, 10V
2.4mOhm @ 25A, 10V
90 nC @ 10 V
±20V
6120 pF @ 15 V
-
2.5W (Ta), 83W (Tc)
8-PQFN (5x6)
-
FDMS0312S
POWER FIELD-EFFECT TRANSISTOR, 1
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
22,841 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-PowerTDFN
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
3V @ 1mA
19A (Ta), 42A (Tc)
4.5V, 10V
4.9mOhm @ 18A, 10V
46 nC @ 10 V
±20V
2820 pF @ 15 V
-
2.5W (Ta), 46W (Tc)
8-PQFN (5x6)
-
FDMS0312S
MOSFET N-CH 30V 19A/42A 8PQFN
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
22,841 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-PowerTDFN
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
3V @ 1mA
19A (Ta), 42A (Tc)
4.5V, 10V
4.9mOhm @ 18A, 10V
46 nC @ 10 V
±20V
2820 pF @ 15 V
-
2.5W (Ta), 46W (Tc)
8-PQFN (5x6)
-
FDS6690AS
MOSFET N-CH 30V 10A 8SOIC
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
18,764 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-SOIC (0.154", 3.90mm Width)
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
3V @ 1mA
10A (Ta)
4.5V, 10V
12mOhm @ 10A, 10V
23 nC @ 10 V
±20V
910 pF @ 15 V
-
2.5W (Ta)
8-SOIC
-
FDMS0310AS
MOSFET N-CH 30V 19A/22A 8PQFN
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
14,899 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-PowerTDFN
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
3V @ 1mA
19A (Ta), 22A (Tc)
4.5V, 10V
4.3mOhm @ 19A, 10V
37 nC @ 10 V
±20V
2280 pF @ 15 V
-
2.5W (Ta), 41W (Tc)
8-PQFN (5x6)
-
FDMC7660S
POWER FIELD-EFFECT TRANSISTOR, 4
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
12,250 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-PowerTDFN
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
2.5V @ 1mA
20A (Ta), 40A (Tc)
4.5V, 10V
2.2mOhm @ 20A, 10V
66 nC @ 10 V
±20V
4325 pF @ 15 V
-
2.3W (Ta), 41W (Tc)
Power33
-
FDMC7660S
MOSFET N-CH 30V 20A/40A POWER33
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
12,250 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-PowerTDFN
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
2.5V @ 1mA
20A (Ta), 40A (Tc)
4.5V, 10V
2.2mOhm @ 20A, 10V
66 nC @ 10 V
±20V
4325 pF @ 15 V
-
2.3W (Ta), 41W (Tc)
Power33
-
FDMS0309AS
MOSFET N-CH 30V 21A/49A 8PQFN
1+
$60.8451
5+
$57.4648
10+
$54.0845
Quantity
12,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-PowerTDFN
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
3V @ 1mA
21A (Ta), 49A (Tc)
4.5V, 10V
3.5mOhm @ 21A, 10V
47 nC @ 10 V
±20V
3000 pF @ 15 V
-
2.5W (Ta), 50W (Tc)
8-PQFN (5x6)
-
FDMS0308AS
MOSFET N-CH 30V 24A/49A 8PQFN
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
6,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-PowerTDFN
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
3V @ 1mA
24A (Ta), 49A (Tc)
4.5V, 10V
2.8mOhm @ 24A, 10V
47 nC @ 10 V
±20V
3000 pF @ 15 V
-
2.5W (Ta), 50W (Tc)
8-PQFN (5x6)
-
FDS6670AS
MOSFET N-CH 30V 13.5A 8SOIC
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-SOIC (0.154", 3.90mm Width)
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
3V @ 1mA
13.5A (Ta)
4.5V, 10V
9mOhm @ 13.5A, 10V
38 nC @ 10 V
±20V
1540 pF @ 15 V
-
2.5W (Ta)
8-SOIC
-
FDMS8023S
POWER FIELD-EFFECT TRANSISTOR, 2
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
4,222 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-PowerTDFN
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
3V @ 1mA
26A (Ta), 49A (Tc)
4.5V, 10V
2.4mOhm @ 26A, 10V
57 nC @ 10 V
±20V
3550 pF @ 15 V
-
2.5W (Ta), 59W (Tc)
8-PQFN (5x6)
-
FDMS0306AS
MOSFET N-CH 30V 26A/49A 8PQFN
1+
$0.2155
5+
$0.2035
10+
$0.1915
Quantity
3,363 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-PowerTDFN
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
3V @ 1mA
26A (Ta), 49A (Tc)
4.5V, 10V
2.4mOhm @ 26A, 10V
57 nC @ 10 V
±20V
3550 pF @ 15 V
-
2.5W (Ta), 59W (Tc)
8-PQFN (5x6)
-
FDMS0300S
MOSFET N-CH 30V 31A/49A 8PQFN
1+
$2.6620
5+
$2.5141
10+
$2.3662
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-PowerTDFN
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
3V @ 1mA
31A (Ta), 49A (Tc)
4.5V, 10V
1.8mOhm @ 30A, 10V
133 nC @ 10 V
±20V
8705 pF @ 15 V
-
2.5W (Ta), 96W (Tc)
8-PQFN (5x6)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.